PD -94233
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
35GQ150
35 Amp, 150V
Major Ratings and Characteristics
Characteristics
I
F(AV)
V
RRM
I
FSM
@ tp = 8.3ms half-sine
V
F
@ 35Apk, T
J
=125°C
35GQ150
35
100
400
Units
A
V
A
Description/Features
The 35GQ150 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermeticly isolated
TO-254AA package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Lightweight
•
•
•
•
1.0
V
T
J
,T
stg
Operating and storage
-55 to 150
°C
.12 ( .005 )
CASE STYLE
3.78 ( .149 )
3.53 ( .139 )
-A -
13.84 ( .545 )
13.59 ( .535 )
6.60 ( .260 )
6.32 ( .249 )
-B -
1.27 ( .050 )
1.02 ( .040 )
17.40 ( .685 )
16.89 ( .665 )
31.40 ( 1.235 )
30.39 ( 1.199 )
20.32 ( .800 )
20.07 ( .790 )
13.84 ( .545 )
13.59 ( .535 )
LEG EN D
1 - CO LL
2 - E MIT
3 - GA TE
1
2
3
-C -
3X
3.81 ( .150 )
2X
1.14 ( .045 )
0.89 ( .035 )
.50 ( .020 )
.25 ( .010 )
M C A M B
M C
3.81 ( .150 )
CATHODE ANODE ANODE
IR Case Style TO-254AA
www.irf.com
1
06/19/01
35GQ150
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
35GQ150
150
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
Surge Current
400
A
@ t
p
= 8.3 ms half-sine
Limits
35
Units
A
Conditions
50% duty cycle @ T
C
= 100 °C, square waveform
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
See Fig. 1Q
Limits
1.12
1.41
1.0
1.31
0.9
1.26
Units
V
V
V
V
V
V
mA
mA
mA
pF
nH
@ 35A
@ 70A
@ 35A
@ 70A
@ 35A
@ 70A
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
Conditions
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
I
RM
Max. Reverse Leakage Current
See Fig. 2Q
0.011
3.2
14
V
R
= rated V
R
C
T
L
S
Max. Junction Capacitance
Typical Series Inductance
1100
7.8
V
R
= 5V
DC
( 1MHz, 25°C )
Measured from anode lead to cathode lead
6mm ( 0.025 in.) from package
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max.Junction Temperature Range
Max. Storage Temperature Range
to Case
wt
Weight (Typical)
Die Size (Typical)
Case Style
Q
Pulse Width < 300µs, Duty Cycle < 2%
9.3
150X180
TO-254AA
g
mils
Limits Units
-55 to 150
-55 to 150
1.1
°C
°C
°C/W
DC operation
Conditions
R
thJC
Max. Thermal Resistance, Junction
See Fig. 4
2
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35GQ150
100
125°C
10
Reverse Current - I R ( mA )
100°C
1
75°C
100
0.1
0.01
25°C
0.001
0.0001
0
40
80
120
160
Instantaneous Forward Current - I F (A)
Reverse Voltage - V R (V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10
10000
Tj = 25°C
Junction Capacitance - C (pF)
T
Tj = 125°C
1000
Tj = -55°C
TJ = 25°C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Forward Voltage Drop - V F (V)
100
0
40
80
120
160
Fig. 1 - Max. Forward Voltage Drop Characteristics
Reverse Voltage -VR (V)
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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3
35GQ150
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.001
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
P
DM
t
1
t
2
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
180
160
Allowable Case Temprature - (°C)
35GQ150
R thJC = 1.1°C/W
140
120
DC
100
80
60
40
20
0
0
10
20
30
40
50
60
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/01
4
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