INCHES POUND
The documentation process conversion measures necessary to
comply with this revision shall be completed by 29 January 2000.
MIL-PRF-19500/159K
19 November 1999
SUPERSEDING
MIL-PRF-19500/159J
1 July 1998
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,
TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1,
1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANJ, JANS, JANHC AND JANKC;
RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H;
JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 6.2 volts
±
5 percent, silicon, voltage-reference diodes. Five levels of
product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are
provided for each unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided for each
encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
1.2 Physical dimensions. See figure 1 (similar to DO-7 and DO-35), figure 2 (similar to DO-213AA), figure 3 (JANHCA and JANKCA),
figure 4 (JANHCB and JANKCB) and figure 5 (JANHCD and JANKCD).
1.3 Maximum ratings. (Unless otherwise specified, T
A
= +25
°
C).
P
T
1/
T
STG
and T
op
I
ZM
See note 1
Power derating
above T
A
= +25
°
C
mW
500
°
C
-55 to +175
mA dc
70
mW/
°
C
3.33
NOTE;
1. To guarantee voltage temperature stability, it is necessary to maintain the proper I
Z
= 7.5 mA dc.
1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at T
A
= +25
°
C.
Type
∆
V
Z
(voltage temperature
stability)
Z
Z
I
Z
= 7.5 mA dc
Min
mV dc
1N821-1, 1N821UR-1
1N823-1, 1N823UR-1
1N825-1, 1N825UR-1
1N827-1, 1N827UR-1
1N829-1, 1N829UR-1
96
48
19
9
5
ohms
15
15
15
15
15
Volts
5.89
5.89
5.89
5.89
5.89
Max
Volts
6.51
6.51
6.51
6.51
6.51
µ
A
2.0
2.0
2.0
2.0
2.0
V
Z
I
Z
= 7.5 mA dc
I
R
V
R
= 3.0 V
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/159K
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense
Automated Printing Service, 700 Robbins Avenue, Building 4D (DPM-DODSSP), Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.3).
3.2 Associated specification. The individual item performance requirements shall be in accordance with MIL-PRF-19500, and as
specified herein.
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500.
3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein.
3.4.1 Lead finish. Unless otherwise specified herein, lead finish shall be solderable in accordance with MIL-PRF-19500,
MIL-STD-750, and herein.
3.5 Diode construction. These devices shall be constructed in a manner and using material which enable the diodes to meet the
applicable requirements of MIL-PRF-19500 and this document.
3.5.1 Dash-one construction. Shall be as specified in MIL-PRF-19500.
3.5.2 JANS construction. Construction shall be dash-one, category I or II metallurgical bond in accordance with MIL-PRF-19500.
3.5.3 JANHC and JANKC construction. JANHC and JANKC construction may differ in die size and bonding pad layout provided the
manufacturing technology is identical (example: diffused junction, alloy junction).
2
MIL-PRF-19500/159K
Dimensions
Symbol
Inches
Min
BD
BL
LD
LL
LL
1
.060
.120
.018
1.000
---
Max
.107
.300
.023
1.500
0.050
Millimeters
Min
1.52
3.05
0.46
25.40
---
Max
2.72
7.62
0.58
38.10
1.27
4
3
3
Notes
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any shall be included within this cylinder but
shall not be subject to minimum limit of BD.
4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than heat slugs.
FIGURE 1. Physical dimensions, 1N821-1,through 1N829-1 (similar to DO-35 and DO-7).
3
MIL-PRF-19500/159K
Dimensions
Symbol
Min
BD
BL
ECT
S
.063
.130
.016
Inches
Max
.067
.146
.022
Millimeters
Min
1.60
3.30
0.41
Max
1.70
3.71
0.56
.001 Min
0.03 Min
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 2. Physical dimensions, 1N821UR-1, through 1N829UR-1 (DO-213AA).
4
MIL-PRF-19500/159K
Dimensions
Symbol
Inches
Min
A
B
C
D
E
F
G
H
J
K
L
M
N
.0280
.0080
.0104
.0019
.0054
.0020
.0280
.0030
.0030
.0209
.0080
.0104
.0059
Max
.0320
.0100
.0106
.0021
.0056
.0040
.0320
.0050
.0050
.0211
.0100
.0105
.0061
Millimeters
Min
0.711
0.203
0.264
0.048
0.137
0.050
0.711
0.076
0.076
0.531
0.203
0.264
0.150
Max
0.813
0.254
0.269
0.053
0.142
0.102
0.813
0.127
0.127
0.536
0.254
0.269
0.155
BACKSIDE MUST BE ELECTRICALLY ISOLATED TO ENSURE
PROPER PERFORMANCE.
DESIGN DATA
Metallization:
Top: 1 (Cathode) . . . . Al
2 (Anode) . . . . . . Al
3 (Test pad) . . . . Al
Circuit layout data:
For zener operation, cathode must be
operated positive with respect anode.
Test pad is for wire bond evaluation only.
No electrical contact is made with test pad.
Back .. Metalization. . . Au
Al thickness . . . . . . . 25,000Å minimum
Gold thickness . . . . . 4,000Å minimum
Chip thickness . . . . . 0.010 inch (0.254 mm)
±
0.002 inch (0.051 mm).
NOTES:
1. Dimensions are in inches unless otherwise indicated.
2. Metric equivalents are given for general information only.
FIGURE 3. JANHC and JANKC (A-version) die dimensions.
5
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