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IS49RL36160-125FBLI

产品描述DDR DRAM, 16MX36, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168
产品类别存储    存储   
文件大小3MB,共115页
制造商Integrated Silicon Solution ( ISSI )
标准
下载文档 详细参数 选型对比 全文预览

IS49RL36160-125FBLI概述

DDR DRAM, 16MX36, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168

IS49RL36160-125FBLI规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Integrated Silicon Solution ( ISSI )
包装说明LBGA,
Reach Compliance Codecompliant
访问模式MULTI BANK PAGE BURST
其他特性AUTO/SELF REFRESH
JESD-30 代码S-PBGA-B168
长度13.5 mm
内存密度603979776 bit
内存集成电路类型DDR DRAM
内存宽度36
功能数量1
端口数量1
端子数量168
字数16777216 words
字数代码16000000
工作模式SYNCHRONOUS
组织16MX36
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装形状SQUARE
封装形式GRID ARRAY, LOW PROFILE
座面最大高度1.25 mm
自我刷新YES
最大供电电压 (Vsup)1.42 V
最小供电电压 (Vsup)1.28 V
标称供电电压 (Vsup)1.35 V
表面贴装YES
技术CMOS
端子形式BALL
端子节距1 mm
端子位置BOTTOM
宽度13.5 mm
Base Number Matches1

文档预览

下载PDF文档
576Mb: x18, x36 RLDRAM 3
Features
RLDRAM 3
IS49RL18320– 2 Meg x 18 x 16 Banks
IS49RL36160– 1 Meg x 36 x 16 Banks
Features
1066 MHz DDR operation (2133 Mb/s/ball data
rate)
76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock
frequency)
Organization
– 32 Meg x 18, and 16 Meg x 36 common I/O (CIO)
– 16 banks
1.2V center-terminated push/pull I/O
2.5V V
EXT
, 1.35V V
DD
, 1.2V V
DDQ
I/O
Reduced cycle time (
t
RC (MIN) = 8 - 12ns)
SDR addressing
Programmable READ/WRITE latency (RL/WL) and
burst length
Data mask for WRITE commands
Fr
x,
DK
x#)
and output data clocks (QK
x,
QK
x#)
On-die DLL generates CK edge-aligned data and
64ms refresh (128K refresh per 64ms)
168-ball FBGA package
Ω
or 60
Ω
matched impedance outputs
Integrated on-die termination (ODT)
Single or multibank writes
Extended operating range (200–1066 MHz)
READ training register
Multiplexed and non-multiplexed addressing capa-
bilities
Mirror function
Output driver and ODT calibration
JTAG interface (IEEE 1149.1-2001)
Clock cycle and
t
RC timing
– 0.93ns and
t
RC (MIN) = 8ns
(RL3-2133)
– 0.93ns and
t
RC (MIN) = 10ns
(RL3-2133)
– 1.07ns and
t
RC (MIN) = 8ns
(RL3-1866)
– 1.07ns and
t
RC (MIN) = 10ns
(RL3-1866)
– 1.25ns and
t
RC (MIN) = 8ns
(RL3-1600)
– 1.25ns and
t
RC (MIN) = 10ns
(RL3-1600)
– 1.25ns and
t
RC (MIN) = 12ns
(RL3-1600)
Con guration
-32 Meg x 18
- 16 Meg x 36
Operating Temperature
– Commercial (T
C
= 0° to +95°C)
– Industrial (T
C
= –40°C to +95°C)
Package
– 168-ball FBGA
– 168-ball FBGA (Pb-free)
Revision
Options
Copyright © 2013 Integrated Silicon Solu on, Inc. All rights reserved. ISSI reserves the right to make changes to this specifica on and its products at any me without
no ce. ISSI assumes no liability arising out of the applica on or use of any informa on, products or services described herein. Customers are advised to obtain the
latest version of this device specifica on before relying on any published informa on and before placing orders for produ.ct
s
Integrated Silicon Solu on, Inc. does not recommend the use of any of its products in life support applica ons where the failure or malfunc on of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effec veness. Products are not authorized for use in such
applica ons unless Integrated Silicon Solu on, Inc. receives wri en assurance to its sa sfac on, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) poten al liability of Integrated Silicon Solu on, Inc is adequately protected under the circumstances
RLDRAM® is a registered trademark of Micron Technology, Inc.
Integrated Silicon Solution, Inc.
www.issi.com
Rev. 00B,
2/21/2013

IS49RL36160-125FBLI相似产品对比

IS49RL36160-125FBLI IS49RL18320-125FBL IS49RL18320-125FBLI IS49RL36160-125FBL
描述 DDR DRAM, 16MX36, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168 DDR DRAM, 32MX18, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168 DDR DRAM, 32MX18, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168 DDR DRAM, 16MX36, CMOS, PBGA168, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168
是否Rohs认证 符合 符合 符合 符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
包装说明 LBGA, 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168 13.50 X 13.50 MM, 1.25 MM HEIGHT, LEAD FREE, MO-205, FCBGA-168 LBGA,
Reach Compliance Code compliant compli compli compliant
访问模式 MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 代码 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168 S-PBGA-B168
长度 13.5 mm 13.5 mm 13.5 mm 13.5 mm
内存密度 603979776 bit 603979776 bi 603979776 bi 603979776 bit
内存集成电路类型 DDR DRAM DDR DRAM DDR DRAM DDR DRAM
内存宽度 36 18 18 36
功能数量 1 1 1 1
端口数量 1 1 1 1
端子数量 168 168 168 168
字数 16777216 words 33554432 words 33554432 words 16777216 words
字数代码 16000000 32000000 32000000 16000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
组织 16MX36 32MX18 32MX18 16MX36
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LBGA LBGA LBGA LBGA
封装形状 SQUARE SQUARE SQUARE SQUARE
封装形式 GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
座面最大高度 1.25 mm 1.25 mm 1.25 mm 1.25 mm
自我刷新 YES YES YES YES
最大供电电压 (Vsup) 1.42 V 1.42 V 1.42 V 1.42 V
最小供电电压 (Vsup) 1.28 V 1.28 V 1.28 V 1.28 V
标称供电电压 (Vsup) 1.35 V 1.35 V 1.35 V 1.35 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
端子形式 BALL BALL BALL BALL
端子节距 1 mm 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM
宽度 13.5 mm 13.5 mm 13.5 mm 13.5 mm
Base Number Matches 1 1 1 1

 
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