4K x 36 BiCMOS SYNCHRONOUS DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PGA (Pin Grid Array).
All IDT military modules are constructed with semiconduc-
tor components manufactured in compliance with the latest
revision of MIL-STD-883, Class B making them ideally suited
to applications demanding the highest level of performance
and reliability.
PIN CONFIGURATION
1
A
B
C
D
E
F
G
H
J
K
L
M
N
GND
L_I/O4
L_I/O8
L_I/O9
L_I/O12
L_I/O13
GND
L_I/O14
L_I/O15
L_I/O20
L_I/O21
L_I/O23
GND
2
L_I/O3
L_I/O5
VCC
L_I/O10
L_
CE
L
L_
OE
L
L_R/
W
0
L_R/
W
2
L_I/O16
L_I/O19
VCC
L_I/O24
L_I/O26
3
L_I/O2
L_I/O6
L_I/O7
L_I/O11
L_
CE
H
L_
OE
H
L_R/
W
1
L_R/
W
3
L_I/O17
L_I/O18
L_I/O22
L_I/O25
L_I/O27
4
GND
L_A2
GND
L_A3
L_A4
L_A5
GND
L_A6
L_A7
GND
L_A8
L_I/O29
L_I/O28
L_A10
L_A9
L_I/O30
GND
L_A11
L_I/O31
L_I/O32
L_I/O33
GND
R_I/O35
L_I/O35
L_I/O34
R_A11
R_I/O34
R_I/O33
R_I/O32
R_A10
R_I/O30
R_I/O31
5
L_I/O1
L_A1
L_
CLKEN
L
6
L_I/O0
L_A0
L_
CLKEN
H
7
GND
L_CLK
R_CLK
8
R_I/O0
R_A0
9
R_I/O1
R_A1
10
GND
R_A2
GND
R_A4
R_A5
R_A6
GND
R_A7
R_A8
GND
R_A9
R_I/O29
R_I/O28
11
R_I/O2
R_I/O6
R_I/O7
R_I/O11
R_
CE
H
R_
OE
H
R_R/
W
1
R_R/
W
3
R_I/O17
R_I/O18
R_I/O22
R_I/O25
R_I/O27
12
R_I/O3
R_I/O5
VCC
R_I/O10
R_
CE
L
R_
OE
L
R_R/
W
0
R_R/
W
2
R_I/O16
R_I/O19
VCC
R_I/O24
R_I/O26
13
GND
R_I/O4
R_I/O8
R_I/O9
R_I/O12
R_I/O13
GND
R_I/O14
R_I/O15
R_I/O20
R_I/O21
R_I/O23
GND
2809 drw 02
R_
CLKEN
H R_
CLKEN
L
GND
GND
R_A3
GND
PIN NAMES
Left Port
L_R/
W
0-3
L_
OE
L, H
L_
CE
L, H
L_CLK
L_A
0-11
L_I/O
0-35
V
CC
GND
Right Port
R_R/
W
0-3
R_
OE
L, H
R_
CE
L, H
R_CLK
R_A
0-11
R_I/O
0-35
Names
Byte Read/Write Enables
Word Output Enables
Word Chip Enables
Word Clock Enables
Clock Inputs
Address Inputs
Data Input/Outputs
Power
Ground
2809 tbl 01
L_
CLKEN
L, H
R_
CLKEN
L, H
7.4
2
IDT7M1024
4K x 36 BiCMOS SYNCHRONOUS DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect to
GND
Terminal Voltage
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output Current
Commercial
Military
Unit
V
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Military
Ambient
Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
VCC
5.0V
±
10%
5.0V
±
10%
2809 tbl 03
–0.5 to +7.0 –0.5 to +7.0
V
TERM
T
A
(3)
–0.5 to V
CC
0 to +70
–0.5 to V
CC
V
–55 to +125
°C
Commercial
T
BIAS
T
STG
I
OUT
–55 to +125 –65 to +135
°C
–55 to +125 –65 to +150
°C
50
50
mA
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage
Input HIGH Voltage
Input LOW Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
0.8
Unit
V
V
V
V
2809 tbl 04
NOTES:
2809 tbl 02
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. Inputs and Vcc terminals only.
NOTE:
1. V
IL
= -3.0V for pulse width less than 20ns.
CAPACITANCE
(T
A
= +25°C, F = 1.0MH
Z
)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Condition
V
IN
= 0V
V
OUT
= 0V
Max. Unit
50
15
pF
pF
2809 tbl 05
TRUTH TABLES
TRUTH TABLE I: READ/WRITE CONTROL
(1)
Inputs
Synchronous
Clk
Asynchronous
R/
W
h
l
l
h
h
Outputs
I/O
0-35
High-Z
DATA
IN
DATA
IN
DATA
OUT
High-Z
Mode
Deselected, Power Down, Data I/O Disabled
Deselected, Power Down, Data Input Enabled
Write
Read
Data I/O Disabled
2809 tbl 06
u
u
u
u
u
CE
h
h
l
l
l
OE
X
X
X
L
H
TRUTH TABLE II:
CLOCK ENABLE FUNCTION TABLE
(1)
Inputs
Operating Mode
Load “1”
Load “0”
Hold (do nothing)
Clk
Register Inputs
Register Outputs
ADDR
H
L
N/C
N/C
DATA
OUT
H
L
N/C
N/C
u
u
u
X
CLKEN
l
l
h
H
ADDR
h
l
X
X
DATA
IN
h
l
X
X
NOTE:
2809 tbl 07
1. H = HIGH voltage level steady state, h = HIGH voltage level one set-up time prior to the LOW-to-HIGH clock transition, L =LOW voltage level steady state
l = LOW voltage level one set-up time prior to the LOW-to-HIGH clock transition, X = Don't care, N/C = No change
7.4
3
IDT7M1024
4K x 36 BiCMOS SYNCHRONOUS DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
IDT7M1024
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Output LOW Voltage
Output HIGH Voltage
Test Condition
V
CC
= 5.5V, V
IN
= 0V to V
CC
Min.
—
—
—
2.4
Max.
40
10
0.4
—
Unit
µA
µA
V
V
2809 tbl 08
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= –4mA
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5V
±
10%)
IDT7M1024SxxG, IDT7M1024SxxGB
–20
Symbol Parameter
Dynamic
I
CC
Operating
Current (Both
Ports Active)
Standby
I
SB1
Current (Both
Ports—TTL
Level Inputs)
Standby
I
SB2
Current (One
Port—TTL
Level Inputs)
I
SB3
Full Standby
Current (Both
Ports—CMOS
Level Inputs)
I
SB4
Full Standby
Current (One
Port—CMOS
Level Inputs)
–25
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
1480
1360
680
640
1080
1000
80
80
1040
960
Typ.
—
—
—
—
—
—
—
—
—
—
–30
Max.
1440
—
560
—
1000
—
80
—
960
—
mA
mA
mA
mA
Unit
mA
Test Condition
Version
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Typ. Max.
—
—
—
—
—
—
—
—
—
—
—
1440
—
720
—
1080
—
80
—
1040
CE
≤
V
IL
Outputs Open
f = fM
AX
(1)
L_
CE
and
R_
CE
≥
V
IH
f = fM
AX
(1)
L_
CE
or R_
CE
≥
V
IH
Active Port
Outputs Open,
f = fM
AX
(1)
Both Ports R_
CE
and L_
CE
≥
V
CC
– 0.2V
V
IN
≥
V
CC
– 0.2V
or V
IN
≤
0.2V, f = 0
(2)
One Port L_
CE
or R_
CE
≥
V
CC
– 0.2V, V
IN
≥
V
CC
– 0.2V
or V
IN
≤
0.2V, Active Port
Outputs Open, f = fM
AX
(1)
NOTES:
2809 tbl 09
1. At f = fM
AX
, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCLK, and using “AC TEST
CONDITIONS” of input levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to inputs at CMOS level standby.
7.4
4
IDT7M1024
4K x 36 BiCMOS SYNCHRONOUS DUAL-PORT STATIC RAM MODULE
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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