4K x 36
BiCMOS DUAL-PORT
STATIC RAM MODULE
Integrated Device Technology, Inc.
IDT7M1014
FEATURES
• High-density 4K x 36 BiCMOS Dual-Port Static RAM
module
• Fast access times
— Commercial: 15, 20ns
— Military: 25, 30ns
• Fully asynchronous read/write operation from either port
• Surface mounted LCC packages allow through-hole
module to fit on a ceramic PGA footprint
• Single 5V (±10%) power supply
• Multiple GND pins and decoupling capacitors for maxi-
mum noise immunity
• Inputs/outputs directly TTL-compatible
DESCRIPTION
The IDT7M1014 is a 4K x 36 asynchronous high-speed
BiCMOS Dual-Port static RAM module constructed on a co-
fired ceramic substrate using 4 IDT7014 (4K x 9) asynchro-
nous Dual-Port RAMs. The IDT7M1014 module is designed
to be used as stand-alone 36-bit dual-port RAM.
This module provides two independent ports with separate
control, address, and I/O pins that permit independent and
asynchronous access for reads or writes to any location in
memory.
The IDT7M1014 module is packaged in a 142-lead ceramic
PGA (Pin Grid Array). Maximum access times as fast as 15ns
and 25ns are available over the commercial and military
temperature ranges respectively.
All IDT military modules are constructed with semiconduc-
tor components manufactured in compliance with the latest
revision of MIL-STD-883, Class B making them ideally suited
to applications demanding the highest level of performance
and reliability.
FUNCTIONAL BLOCK DIAGRAM
L_A
0 – 11
L_I/O
0 – 8
L_
OE
L
L_R/
W
0
L_I/O
9 – 17
IDT7014
4K x 9
L_R/
W
1
L_I/O
18 – 26
L_
OE
H
L_R/
W
2
L_I/O
27 – 35
IDT7014
4K x 9
L_R/
W
3
R_R/
W
3
2819 drw 01
R_A
0 – 11
R_I/O
0 – 8
IDT7014
4K x 9
R_
OE
L
R_R/
W
0
R_I/O
9 – 17
R_R/
W
1
R_I/O
18 – 26
IDT7014
4K x 9
R_
OE
H
R_R/
W
2
R_I/O
27 – 35
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996 Integrated Device Technology, Inc.
DECEMBER 1995
DSC-2819/4
7.03
1
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATION
1
A
B
C
D
E
F
G
H
J
K
L
M
N
GND
L_I/O
4
L_I/O
8
L_I/O
9
L_I/O
12
L_I/O
13
GND
L_I/O
14
L_I/O
15
L_I/O
20
L_I/O
21
L_I/O
23
GND
2
L_I/O
3
L_I/O
5
V
CC
L_I/O
10
N.C.
L_
OE
L
L_R/
W
0
L_R/
W
2
L_I/O
16
L_I/O
19
V
CC
L_I/O
24
L_I/O
26
3
L_I/O
2
L_I/O
6
L_I/O
7
L_I/O
11
N.C.
L_
OE
H
L_R/
W
1
L_R/
W
3
L_I/O
17
L_I/O
18
L_I/O
22
L_I/O
25
L_I/O
27
4
GND
L_A
2
GND
L_A
3
L_A
4
L_A5
GND
L_A
6
L_A
7
GND
L_A
8
L_I/O
29
L_I/O
28
L_A
10
L_A
9
L_I/O
30
GND
L_A
11
L_I/O
31
L_I/O
32
L_I/O
33
GND
R_I/O
35
L_I/O
35
L_I/O
34
R_A
11
R_I/O
34
R_I/O
33
R_I/O
32
R_A
10
R_I/O
30
R_I/O
31
GND
5
L_I/O
1
L_A
1
N.C.
GND
6
L_I/O
0
L_A
0
N.C.
7
GND
N.C.
N.C.
8
R_I/O
0
R_A
0
N.C.
GND
9
R_I/O
1
R_A
1
N.C.
R_A
3
10
GND
R_A
2
GND
R_A
4
R_A
5
R_A
6
GND
R_A
7
R_A
8
GND
R_A
9
R_I/O
29
R_I/O
28
11
R_I/O
2
R_I/O
6
R_I/O
7
R_I/O
11
N.C.
R_
OE
H
R_R/
W
1
R_R/
W
3
R_I/O
17
R_I/O
18
R_I/O
22
R_I/O
25
R_I/O
27
12
R_I/O
3
R_I/O
5
V
CC
R_I/O
10
N.C.
R_
OE
L
R_R/
W
0
R_R/
W
2
R_I/O
16
R_I/O
19
V
CC
R_I/O
24
R_I/O
26
13
GND
R_I/O
4
R_I/O
8
R_I/O
9
R_I/O
12
R_I/O
13
GND
R_I/O
14
R_I/O
15
R_I/O
20
R_I/O
21
R_I/O
23
GND
2819 drw 02
2809 drw 02
PIN NAMES
Left Port
L_R/
W
0-3
L_
OE
L, H
L_A
0-11
L_I/O
0-35
V
CC
GND
Right Port
R_R/
W
0-3
R_
OE
L, H
R_A
0-11
R_I/O
0-35
Names
Byte Read/Write Enables
Word Output Enables
Address Inputs
Data Input/Outputs
Power
Ground
2819 tbl 01
7.03
2
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial
–0.5 to +7.0
Military
–0.5 to +7.0
Unit
V
V
TERM
(2)
Terminal Voltage
with Respect to
GND
V
TERM
(3)
Terminal Voltage
T
A
Operating
Temperature
Temperature
T
BIAS
Under Bias
T
STG
Storage
Temperature
DC Output
I
OUT
Current
RECOMMENDED DC
OPERATING CONDITIONS
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage
Input HIGH Voltage
Input LOW Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
0.8
Unit
V
V
V
V
2819 tbl 03
–0.5 to +7.0
0 to +70
–10 to +85
–55 to +125
50
–0.5 to +7.0
–55 to +125
–65 to +135
–65 to +150
50
V
°C
°C
°C
mA
NOTE:
1. V
IL
≥
–3.0V for pulse width less than 20ns.
NOTES:
2819 tbl 02
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. Inputs and V
CC
terminals only.
3. I/O terminals only.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Military
Commercial
Ambient
Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
V
CC
5.0V
±
10%
5.0V
±
10%
2819 tbl 04
CAPACITANCE TABLE
(T
A
= +25°C, f = 1.0MHz)
Symbol
C_
IN
(1)
C_
IN
(2)
C_
IN
(3)
C
OUT
Parameter
Input Capacitance (Address)
Input Capacitance (Data, R/
W
)
Input Capacitance (
OE
)
Output Capacitance (Data)
Conditions
V_
IN
= 0V
V_
IN
= 0V
V_
IN
= 0V
V_
OUT
= 0V
Max.
50
15
25
15
Unit
pF
pF
pF
pF
2819 tbl 05
NOTE:
1. This parameter is guaranteed by design but not tested.
7.03
3
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, T
A
= –55°C to +125°C or 0°C to +70°C)
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage
V
IN
= GND to V
CC
OE
Test Conditions
V
CC
= Max.
V
CC
= Max.
V
CC
= Min. I
OL
= 4mA
V
CC
= Min. I
OH
= -4mA
Min.
—
—
—
2.4
Max.
40
10
0.4
—
Unit
µA
µA
V
V
2819 ttbl 06
Output Leakage
≥
V
IH
, V
OUT
= GND to V
CC
Output LOW Voltage
Output HIGH Voltage
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, T
A
= –55°C to +125°C or 0°C to +70°C)
Symbol
I
CC
Parameter
Operating Current
Test Conditions
V
CC
= Max.,
Outputs Open, f = f
MAX
(1)
Min.
—
Max.
1040
Unit
mA
NOTE:
2819 tbl 07
1. At f=f
MAX
, address and data inputs (except
OE
) are cycling at the maximum frequency of read cycle of 1/tRC, and using “AC TEST CONDITIONS” of
input levels of GND to 3V.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Figures 1-3
2819 tbl 08
+5 V
8
7
480
Ω
DATA
OUT
255Ω
5 pF*
6
∆TAA
(Typical, ns)
5
4
3
2
2819 drw 03
1
*Including scope and jig.
Figure 1. Output Load
(For tCHZ, tCLZ, tOHZ, tOLZ, tWHZ, tOW)
20
40
60
80
100 120 140 160 180
200
CAPACITANCE (pF)
2819 drw 04b
DATA
OUT
Zo = 50Ω
50Ω
1.5V
2819 drw 04a
Figure 3. Alternate Lumped Capacitive Load,
Typical Derating
Figure 2. Alternate Output Load
7.03
4
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, T
A
= –55°C to +125°C or 0°C to +70°C)
7M1014SxxG
-15
Symbol
Parameter
Min.
Max.
Min.
Read Cycle
t
RC
t
AA
t
OE
t
OH
t
OLZ
(1)
t
OHZ
(1)
Read Cycle Time
Address Access Time
Output Enable Access Time
Output Hold from Address Change
Output Enable to Output in Low-Z
Output Disable to Output in Hi-Z
15
—
—
3
0
—
—
15
8
—
—
7
20
—
—
3
0
—
—
20
10
—
—
9
25
—
—
3
0
—
—
25
12
—
—
11
30
—
—
3
0
—
—
30
15
—
—
13
ns
ns
ns
ns
ns
ns
7M1014SxxGB
-20
Max.
Min.
-25
Max.
-30
Min.
Max.
Unit
Write Cycle
t
WC
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ
(1)
t
OW
(1)
t
WDD
t
DDD
(1)
Write Cycle Time
Address Valid to End of Write
Address Set-Up Time
Write Pulse Width
Write Recovery Time
Data Valid to End of Write
Data Hold Time
Write Enable to Output in Hi-Z
Output Active from End of Write
Write Pulse to Data Delay
Write Data Valid to Read Data Delay
15
14
0
12
1
10
0
—
0
—
—
—
—
—
—
—
—
—
7
—
30
25
20
15
0
15
2
12
0
—
0
—
—
—
—
—
—
—
—
—
9
—
40
30
25
20
0
20
2
15
0
—
0
—
—
—
—
—
—
—
—
—
11
—
45
35
30
25
0
25
2
20
0
—
0
—
—
—
—
—
—
—
—
—
13
—
50
40
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2819 tbl 09
NOTES:
1. This parameter is guaranteed by design but not tested.
2. Port-to-Port delay through the RAM cells from the writing port to the reading port.
TIMING WAVEFORM OF READ CYCLE NO. 1 (EITHER SIDE)
(1,2)
t
RC
ADDRESS
t
AA
DATA
OUT
t
OH
2819 drw 05
t
OH
NOTES:
1. R/
W
is HIGH for Read Cycles.
2.
OE
≤
V
IL.
7.03
5
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