PEMB11; PUMB11 - PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TSSOP 6-Pin
参数名称 | 属性值 |
Brand Name | Nexperia |
厂商名称 | Nexperia |
零件包装代码 | TSSOP |
包装说明 | SMALL OUTLINE, R-PDSO-G6 |
针数 | 6 |
制造商包装代码 | SOT363 |
Reach Compliance Code | compliant |
Factory Lead Time | 4 weeks |
Is Samacsys | N |
其他特性 | BUILT IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC) | 0.1 A |
集电极-发射极最大电压 | 50 V |
配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 30 |
JESD-30 代码 | R-PDSO-G6 |
JESD-609代码 | e3 |
湿度敏感等级 | 1 |
元件数量 | 2 |
端子数量 | 6 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | PNP |
表面贴装 | YES |
端子面层 | Tin (Sn) |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
PUMB11,135 | PEMB11,115 | PUMB11,115 | PUMB11/ZLF | PUMB11/ZLX | |
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描述 | PEMB11; PUMB11 - PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TSSOP 6-Pin | TRANS 2PNP PREBIAS 0.3W SOT666 | 额定功率:300mW 集电极电流Ic:100mA 集射极击穿电压Vce:50V 晶体管类型:2 个 PNP 预偏压式(双) 2个PNP,-50V,-100mA | PEMB11; PUMB11 - PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TSSOP 6-Pin | PEMB11; PUMB11 - PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TSSOP 6-Pin |
Brand Name | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia |
零件包装代码 | TSSOP | SOT | TSSOP | TSSOP | TSSOP |
针数 | 6 | 6 | 6 | 6 | 6 |
制造商包装代码 | SOT363 | SOT666 | SOT363 | SOT363 | SOT363 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
厂商名称 | Nexperia | Nexperia | - | Nexperia | Nexperia |
包装说明 | SMALL OUTLINE, R-PDSO-G6 | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-G6 | - | - |
Is Samacsys | N | N | N | - | - |
其他特性 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | BUILT IN BIAS RESISTOR RATIO IS 1 | - | - |
最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | - | - |
集电极-发射极最大电压 | 50 V | 50 V | 50 V | - | - |
配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | - | - |
最小直流电流增益 (hFE) | 30 | 30 | 30 | - | - |
JESD-30 代码 | R-PDSO-G6 | R-PDSO-F6 | R-PDSO-G6 | - | - |
JESD-609代码 | e3 | e3 | e3 | - | - |
湿度敏感等级 | 1 | 1 | 1 | - | - |
元件数量 | 2 | 2 | 2 | - | - |
端子数量 | 6 | 6 | 6 | - | - |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | - | - |
极性/信道类型 | PNP | PNP | PNP | - | - |
表面贴装 | YES | YES | YES | - | - |
端子面层 | Tin (Sn) | Tin (Sn) | Tin (Sn) | - | - |
端子形式 | GULL WING | FLAT | GULL WING | - | - |
端子位置 | DUAL | DUAL | DUAL | - | - |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | - | - |
晶体管元件材料 | SILICON | SILICON | SILICON | - | - |
Base Number Matches | 1 | 1 | 1 | - | - |
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