Freescale Semiconductor
Technical Data
Document Number: MRFG35005MT1
Rev. 2, 5/2005
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
•
Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
I
DQ
= 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 450 mWatt
Power Gain — 11 dB
Efficiency — 25%
•
4.5 Watts P1dB @ 3.55 GHz
•
Excellent Phase Linearity and Group Delay Characteristics
•
High Gain, High Efficiency and High Linearity
•
N Suffix Indicates Lead - Free Terminations
•
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35005NT1
MRFG35005MT1
3.5 GHz, 4.5 W, 12 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Symbol
V
DSS
P
D
V
GS
P
in
T
stg
T
ch
T
C
Value
15
10.5
(2)
0.07
(2)
-5
30
- 65 to +150
175
- 20 to +85
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Class AB
Symbol
R
θJC
Value
14.2
(2)
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
1
Package Peak Temperature
260
Unit
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRFG35005NT1 MRFG35005MT1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
Off State Leakage Current
(V
GS
= - 0.4 Vdc, V
DS
= 0 Vdc)
Off State Drain Current
(V
DS
= 12 Vdc, V
GS
= - 2.5 Vdc)
Off State Current
(V
DS
= 28.5 Vdc, V
GS
= - 2.5 Vdc)
Gate - Source Cut - off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 8.7 mA)
Quiescent Gate Voltage
(V
DS
= 12 Vdc, I
D
= 105 mA)
Power Gain
(V
DD
= 12 Vdc, I
DQ
= 80 mA, f = 3.55 GHz)
Output Power, 1 dB Compression Point
(V
DD
= 12 Vdc, I
DQ
= 80 mA, f = 3.55 GHz)
Drain Efficiency
(V
DD
= 12 Vdc, I
DQ
= 80 mA, P
out
= 450 mW Avg.,
f = 3.55 GHz)
Adjacent Channel Power Ratio
(V
DD
= 12 Vdc, P
out
= 450 mW Avg., I
DQ
= 80 mA,
f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
Symbol
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
G
ps
P
1dB
h
D
Min
—
—
—
—
- 1.2
- 1.1
10
—
22
Typ
1.7
< 1.0
—
< 1.0
- 0.9
- 0.8
11
4.5
25
Max
—
100
600
9
- 0.7
- 0.6
—
—
—
Unit
Adc
µAdc
µAdc
mAdc
Vdc
Vdc
dB
W
%
ACPR
—
- 42
- 39
dBc
MRFG35005NT1 MRFG35005MT1
2
RF Device Data
Freescale Semiconductor
V
GS
V
DD
C11
C10
C9
C8
C7
C6
C5
R1
C3 C4
C16
C17
C18
C19
C20
C21
C22
C14 C15
Z5
RF
INPUT
Z1
C1
C29
C28
C27
C26
Z2
C2
Z3
Z4
C12
Z6 Z7 Z8 Z9 Z10 Z11
C13
Z15
C23
Z16
Z17
C24
C25
Z18
RF
OUTPUT
Z12 Z13 Z14
Z1, Z18
Z2
Z3
Z4
Z5, Z15
Z6, Z8, Z10
Z7, Z9
0.125″
0.435″
0.298″
0.336″
0.527″
0.050″
0.125″
x 0.044″ Microstrip
x 0.044″ Microstrip
x 0.254″ Microstrip
x 0.590″ Microstrip
x 0.015″ Microstrip
x 0.025″ Microstrip
x 0.025″ Microstrip
Z11
Z12
Z13
Z14
Z16
Z17
PCB
0.400″ x 0.081″ Microstrip
0.120″ x 0.408″ Microstrip
0.259″ x 0.058″ Microstrip
0.269″ x 0.348″ Microstrip
0.149″ x 0.062″ Microstrip
0.553″ x 0.044″ Microstrip
Rogers 4350, 20 mil,
ε
r
= 3.5
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part
C1, C24
C2
C3, C4, C14, C15
C5, C16
C6, C17
C7, C18
C8, C19
C9, C20
C10, C21
C11, C22
C12, C28
C13, C26, C27
C23
C25
C29
R1
Description
7.5 pF Chip Capacitors
0.4 pF Chip Capacitor (0805)
3.9 pF Chip Capacitors (0805)
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
3.9
µF
Chip Capacitors
0.1
µF
Chip Capacitors
22
µF,
35 V Tantalum Surface Mount Capacitors
0.1 pF Chip Capacitors (0805)
0.3 pF Chip Capacitors (0805)
1.0 pF Chip Capacitor (0805)
1.2 pF Chip Capacitor (0805)
0.9 pF Chip Capacitor (0805)
100
W
Chip Resistor
08051J0R1BBT
08051J0R3BBT
08051J1R0BBT
08051J1R2BBT
08051J0R9BBT
Part Number
100A7R5JP150X
08051J0R4BBT
08051J3R9BBT
100A100JP500X
100A101JP500X
100B101JP500X
100B102JP500X
Manufacturer
ATC
AVX
AVX
ATC
ATC
ATC
ATC
ATC
ATC
Newark
AVX
AVX
AVX
AVX
AVX
Newark
MRFG35005NT1 MRFG35005MT1
RF Device Data
Freescale Semiconductor
3
C7
C18
C6
C11
C10
C9
C8
R1
C3
C4
C14
C15
C5
C17
C16
C19
C20
C21
C22
C12
C2
C13
C23
C1
C25
C29
C28
C27
C26
C24
MRFG35005M
Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35005NT1 MRFG35005MT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
−10
IRL, INPUT RETURN LOSS (dB)
IRL
−20
V
DS
= 12 Vdc, I
DQ
= 85 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
Γ
S
= 0.868é−115.15_,
Γ
L
= 0.764é−139.11_
−20
ACPR (dBc)
PAE, POWER ADDED EFFICIENCY (%)
−10
−30
−40
−30
−40
−50
−60
0.01
ACPR
−50
−60
0.1
P
out
, OUTPUT POWER (WATTS)
1
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
20
17.5
G T , TRANSDUCER GAIN (dB)
15
V
DS
= 12 Vdc, I
DQ
= 85 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
Γ
S
= 0.868é−115.18_,
Γ
L
= 0.764é−139.11_
PAE
40
35
30
G
T
25
20
15
10
5
0
0.01
0.1
P
out
, OUTPUT POWER (WATTS)
1
12.5
10
7.5
5
2.5
0
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE:
All data is referenced to package lead interface.
Γ
S
and
Γ
L
are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35005NT1 MRFG35005MT1
RF Device Data
Freescale Semiconductor
5
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