Bulletin I27143 Rev.B 07/03
25MT060WF
"FULL-BRIDGE" IGBT MTP
Features
Gen. 4 Warp Speed IGBT Technology
HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
Very Low Conduction and Switching Losses
Optional SMT Thermistor
Aluminum Nitride DBC
Very Low Stray Inductance Design for
High Speed Operation
Warp Speed IGBT
50 A
V
CES
= 600V
Benefits
Optimized for Welding, UPS and SMPS
Applications
Operating Frequencies > 20 kHz Hard Switching,
>200 kHz Resonant Mode
Low EMI, requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal Resistance
UL Approved E78996
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
CM
I
LM
I
F
Max
600
@ T
C
= 25°C
@ T
C
= 100°C
50
38
200
200
@ T
C
= 100°C
25
200
± 20
2500
250
100
@ T
C
= 25°C
@ T
C
= 100°C
Units
V
A
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
per single IGBT
I
FM
V
GE
V
ISOL
P
D
V
W
25MT060WF
Bulletin I27143 Rev.B 07/03
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
(BR)CES
∆V
(BR)CES
/
∆T
J
V
CE(ON)
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Min Typ Max Units Test Conditions
600
+0.6
2.22
2.43
1.65
2.08
3
-17
43
250
10
±250
1.64
1.93
1.42
1.80
3.14
3.25
1.93
2.45
6
V
V
GE
= 0V, I
C
= 250µA
V/°C V
GE
= 0V, I
C
= 4mA (25-125°C)
V
GE
V
GE
V
GE
V
GE
V
CE
mV/°C V
CE
S
µA
mA
nA
V
V
=
=
=
=
=
=
15V, I
C
= 25A
15V, I
C
= 50A
15V, I
C
= 25A T
J
= 150°C
15V, I
C
= 50A
T
J
= 150°C
V
GE
, I
C
= 250µA
V
GE
, I
C
= 250µA (25-125°C)
V
GE(th)
∆V
GE(th)
/
∆T
J
g
fe
I
CES
I
GES
V
FM
Gate Threshold Voltage
Temperature Coeff. of
Threshold Voltage
Transconductance
Zero Gate Voltage Collector Current
(1)
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
V
CE
= 100V, I
C
= 25A, PW = 80µs
V
GE
= 0V, V
CE
= 600V, T
J
= 25°C
V
GE
V
GE
I
C
=
I
C
=
I
C
=
I
C
=
= 0V, V
CE
= 600V, T
J
= 150°C
= ± 20V
25A
50A
25A, T
J
= 150°C
50A, T
J
= 150°C
1.36
1.57
1.19
1.48
(1)
I
CES
includes also opposite leg overall leakage
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Q
g
Q
ge
Q
gc
E
on
E
off
E
ts
E
on
E
off
E
ts
C
ies
C
oes
C
res
trr
Irr
Qrr
di
(rec)
M/
dt
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Current
Diode Recovery Charge
Diode PeakRate of Fall of Recovery
During t
b
Min Typ Max Units Test Conditions
175
27
71
134
415
549
391
492
883
3610
714
58
50
4.5
112
250
263
41
107
201
623
824
586
738
1324
5415
1071
87
ns
A
nC
A/µs
nC
I
C
= 25A
V
CC
= 480V
V
GE
= 15V
R
g
= 5Ω
,
I
C
= 25A
V
CC
= 480V
V
GE
= ±15V
R
g
= 5Ω
,
I
C
= 25A
V
CC
= 480V
V
GE
= ±15V, T
J
= 125°C
V
GE
= 0V
V
CC
= 30V
f = 1.0 MHz
V
R
= 200V, I
C
= 25A
di/dt = 200A/µs
µJ
µJ
pF
2
25MT060WF
Bulletin I27143 Rev.B 07/03
Thermal- Mechanical Specifications
Parameters
T
J
T
STG
R
thJC
R
thCS
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case
Case-to-Sink
Clearance
Creepage
(2)
Min
- 40
- 40
IGBT
Diode
Module
(
external
shortest distance in air
Typ
Max
150
125
0.5
0.9
Units
°C
°C/ W
0.06
5.5
8
66
mm
mm
g
(Heatsink Compound Thermal Conductivity = 1 W/mK)
between two terminals)
(
shortest distance along external
surface of the insulating material between 2 terminals
)
Weight
(2) Standard version only i.e. without optional thermistor
(2)
60
IC Maximum DC Collector Current (A)
2.75
50
40
30
20
10
0
25
50
75
100
125
150
T C Case Temperature (°C)
VCE , Collector-to Emitter Voltage (V)
2.25
IC = 50A
IC = 25A
1.75
IC =
1.25
20
40
60
80
100
12.5A
120
140
160
T J , Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
3
25MT060WF
Bulletin I27143 Rev.B 07/03
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.01
0.02
0.01
τ
J
Ri (°C/W)
0.147
0.272
0.079
τi
(sec)
0.00174
0.021346
0.233795
τ
1
τ
2
Ci=
τi/Ri
Ci= i/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6a
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6b
Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
4
25MT060WF
Bulletin I27143 Rev.B 07/03
7000
6000
5000
C
Cies
oes
=C
ce
+C
gc
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1 MHZ
C
= C +C , C SHORTED
ies
ge
gc ce
C res = C gc
16.0
IC= 25A
VCE = 480V
12.0
Capacitance (pF)
4000
3000
8.0
Coes
2000
1000
4.0
Cres
0
1
10
100
1000
0.0
0
50
100
150
200
VCE (V)
Q G, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.5
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 25A
1.0
10
RG = 5.0Ω
VGE = 15V
VCC = 480V
Total Switching Losses (mJ)
Switching Losses (mJ)
EOFF
I C = 50A
EON
0.5
1
I C = 25A
I C = 12.5A
0.0
0
10
20
30
40
50
60
0.1
20
40
60
80
100
120
140
160
RG , Gate Resistance (
Ω
)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
T J , Junction Temperature (°C)
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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