MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF19030/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for class AB PCN and PCS base station applications with
frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
•
CDMA Performance @ 1990 MHz, 26 Volts
IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — - 47 dBc @ 30 kHz BW
1.25 MHz — - 55 dBc @ 12.5 kHz BW
2.25 MHz — - 55 dBc @ 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
•
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF19030LR3
MRF19030LSR3
2.0 GHz, 30 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465E - 04, STYLE 1
NI - 400
MRF19030LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF19030LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
83.3
0.48
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
2.1
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 10
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF19030LR3 MRF19030LSR3
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20
µA)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 300 mA)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2
—
—
3
3.3
0.29
2
4
4.5
0.4
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
1
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 300 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
C
iss
C
oss
C
rss
—
—
—
98.5
37
1.3
—
—
—
pF
pF
pF
G
ps
—
13
—
dB
η
—
36
—
%
IMD
—
- 31
—
dBc
IRL
—
- 13
—
dB
G
ps
12
13
—
dB
η
33
36
—
%
IMD
—
- 31
- 28
dBc
IRL
—
- 13
-9
dB
Ψ
No Degradation In Output Power
Before and After Test
MRF19030LR3 MRF19030LSR3
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
V
GG
+
C2
B1
B2
R3
B3
B4
B5
V
DD
+
C8
R1
R2
C3
C4
R4
+
C6
C9
R5
C5
R6
R7
L2
L3
Z6
Z7
RF
INPUT
Z5
Z1
Z2
C1
L1
Z3
Z4
DUT
C10
Z8
C7
L4
Z9
Z10
RF
OUTPUT
Freescale Semiconductor, Inc...
B1 - B5
C1, C7
C2, C8
C3, C5
C4, C6
C9
C10
L1 - L4
R1 - R7
Z1
Z2
Short Ferrite Beads
10 pF Chip Capacitors, B Case
470
µF,
35 V Electrolytic Capacitors
0.1
µF
Chip Capacitors, B Case
5.1 pF Chip Capacitors, B Case
22
µF
Tantalum Chip Capacitor
0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim
12.5 nH Inductors
12
Ω
Chip Resistors (0805)
0.080″ x 0.595″ Microstrip
0.080″ x 0.600″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Substrate
0.080″
0.325″
0.510″
0.510″
0.325″
0.080″
0.080″
0.080″
0.030″
Arlon
x 0.480″ Microstrip
x 0.280″ Microstrip
x 0.200″ Microstrip
x 0.200″ Microstrip
x 0.280″ Microstrip
x 0.480″ Microstrip
x 0.530″ Microstrip
x 0.671″ Microstrip
x 3.00″ x 5.00″ Glass Teflon
,
Figure 1. MRF19030LR3(LSR3) Test Circuit Schematic
C2
C3
R1
B1
B2
R2
R3 R4
L2
C1
C4
B3 R5
C9
L3
C6
C7
R6
B4
R7
B5
C5
C8
L1
L4
C10
MRF19030
Rev. 0
Figure 2. MRF19030LR3(LSR3) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF19030LR3 MRF19030LSR3
3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
η
, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
50
IRL
40
η
30
V
DD
= 26 Vdc
I
DQ
= 300 mA, P
out
= 30 W (PEP)
Two−Tone Measurement, 100 kHz Tone Spacing
G
ps
10
IMD
0
1900
1920
1940
1960
1980
f, FREQUENCY (MHz)
2000
−35
2020
−30
−20
−15
−10
η
, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
V
DD
= 26 Vdc
I
DQ
= 350 mA, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz),
1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
2.25 MHz
885 kHz
ADJACENT CHANNEL POWER RATION (dB)
IMD, INTERMODULATION DISTORTION (dBc)
45
40
35
30
25
η
−20
−30
−40
−50
−60
−70
G
ps
CDMA 9 Channels Forward
PILOT:0, PAGING:1, TRAFFIC:8−13, SYNC:32
0
2
4
6
8
10
P
out
, OUTPUT POWER (WATTS Avg.) CDMA
−80
−90
20
−25
20 1.25 MHz
15
10
5
−100
12
Freescale Semiconductor, Inc...
Figure 3. Class AB Broadband Circuit Performance
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
−25
IMD, INTERMODULATION DISTORTION (dBc)
−30
−35
−40
−45
350 mA
−50
300 mA
−55
1.0
10
P
out
, OUTPUT POWER (WATTS) PEP
100
V
DD
= 26 Vdc, f = 1960 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
200 mA
300 mA
400 mA
IMD, INTERMODULATION DISTORTION (dBc)
−20
−30
−40
−50
5th Order
−60
−70
−80
1.0
7th Order
V
DD
= 26 Vdc, I
DQ
= 300 mA, f = 1960 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
3rd Order
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion
versus Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
15
14
f = 1960 MHz
I
DQ
= 300 mA, P
out
= 30 W (PEP)
Two−Tone Measurement, 100 kHz Tone Spacing
G
ps
13
−22
−24
−26
−28
−30
IMD
−32
G ps , POWER GAIN (dB)
350 mA
300 mA
13
300 mA
12
200 mA
V
DD
= 26 Vdc, f = 1960 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
11
1.0
10
P
out
, OUTPUT POWER (WATTS) PEP
100
G ps , POWER GAIN (dB)
14
400 mA
13.5
12.5
−34
−36
12
20
22
24
26
28
30
32
−38
34
V
DD
, DRAIN VOLTAGE (VOLTS)
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF19030LR3 MRF19030LSR3
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
f = 1990 MHz
f = 1990 MHz
Z
load
f = 1930 MHz
f = 1930 MHz
Z
source
Freescale Semiconductor, Inc...
Z
o
= 25
Ω
V
DD
= 26 V, I
DQ
= 300 mA, P
out
= 30 W PEP
f
MHz
1930
1960
1990
Z
source
Ω
10.57 - j7.69
10.54 - j7.43
10.47 - j7.21
Z
load
Ω
5.81 - j5.01
5.84 - j4.67
5.84 - j4.35
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF19030LR3 MRF19030LSR3
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
