SRAM Module, 4KX16, 45ns, CMOS, CPGA180, HERMETIC SEALED, CERAMIC, PGA-180
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | PGA |
| 包装说明 | HERMETIC SEALED, CERAMIC, PGA-180 |
| 针数 | 180 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 45 ns |
| 其他特性 | BATTERY BACK-UP |
| I/O 类型 | COMMON |
| JESD-30 代码 | S-CPGA-P180 |
| JESD-609代码 | e0 |
| 长度 | 40.64 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端口数量 | 4 |
| 端子数量 | 180 |
| 字数 | 4096 words |
| 字数代码 | 4000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 4KX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | PGA |
| 封装等效代码 | PGA180(UNSPEC) |
| 封装形状 | SQUARE |
| 封装形式 | GRID ARRAY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.0024 A |
| 最小待机电流 | 2 V |
| 最大压摆率 | 1.32 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG |
| 端子位置 | PERPENDICULAR |
| 处于峰值回流温度下的最长时间 | 30 |
| 宽度 | 40.64 mm |
| Base Number Matches | 1 |
| IDT70M74L45G | IDT70M74L45GB | IDT70M74L35GB | IDT70M74L35G | IDT70M74L30G | IDT70M74L30GB | |
|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 4KX16, 45ns, CMOS, CPGA180, HERMETIC SEALED, CERAMIC, PGA-180 | SRAM Module, 4KX16, 45ns, CMOS, CPGA180, HERMETIC SEALED, CERAMIC, PGA-180 | SRAM Module, 4KX16, 35ns, CMOS, CPGA180, HERMETIC SEALED, CERAMIC, PGA-180 | SRAM Module, 4KX16, 35ns, CMOS, CPGA180, HERMETIC SEALED, CERAMIC, PGA-180 | SRAM Module, 4KX16, 30ns, CMOS, CPGA180, HERMETIC SEALED, CERAMIC, PGA-180 | SRAM Module, 4KX16, 30ns, CMOS, CPGA180, HERMETIC SEALED, CERAMIC, PGA-180 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | PGA | PGA | PGA | PGA | PGA | PGA |
| 包装说明 | HERMETIC SEALED, CERAMIC, PGA-180 | HERMETIC SEALED, CERAMIC, PGA-180 | HERMETIC SEALED, CERAMIC, PGA-180 | HERMETIC SEALED, CERAMIC, PGA-180 | HERMETIC SEALED, CERAMIC, PGA-180 | HERMETIC SEALED, CERAMIC, PGA-180 |
| 针数 | 180 | 180 | 180 | 180 | 180 | 180 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | 3A001.A.2.C | 3A001.A.2.C | EAR99 | EAR99 | 3A001.A.2.C |
| 最长访问时间 | 45 ns | 45 ns | 35 ns | 35 ns | 30 ns | 30 ns |
| 其他特性 | BATTERY BACK-UP | BATTERY BACK-UP | BATTERY BACK-UP | BATTERY BACK-UP | BATTERY BACK-UP | BATTERY BACK-UP |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | S-CPGA-P180 | S-CPGA-P180 | S-CPGA-P180 | S-CPGA-P180 | S-CPGA-P180 | S-CPGA-P180 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 40.64 mm | 40.64 mm | 40.64 mm | 40.64 mm | 40.64 mm | 40.64 mm |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 4 | 4 | 4 | 4 | 4 | 4 |
| 端子数量 | 180 | 180 | 180 | 180 | 180 | 180 |
| 字数 | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words | 4096 words |
| 字数代码 | 4000 | 4000 | 4000 | 4000 | 4000 | 4000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 125 °C | 125 °C | 70 °C | 70 °C | 125 °C |
| 组织 | 4KX16 | 4KX16 | 4KX16 | 4KX16 | 4KX16 | 4KX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | PGA | PGA | PGA | PGA | PGA | PGA |
| 封装等效代码 | PGA180(UNSPEC) | PGA180(UNSPEC) | PGA180(UNSPEC) | PGA180(UNSPEC) | PGA180(UNSPEC) | PGA180(UNSPEC) |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 260 | 225 | 225 | 260 | 260 | 225 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.0024 A | 0.0072 A | 0.0072 A | 0.0024 A | 0.0024 A | 0.0072 A |
| 最小待机电流 | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
| 最大压摆率 | 1.32 mA | 1.56 mA | 1.58 mA | 1.34 mA | 1.36 mA | 1.6 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| 端子位置 | PERPENDICULAR | PERPENDICULAR | PERPENDICULAR | PERPENDICULAR | PERPENDICULAR | PERPENDICULAR |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 |
| 宽度 | 40.64 mm | 40.64 mm | 40.64 mm | 40.64 mm | 40.64 mm | 40.64 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | - |
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