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MT46H64M32LFMA-6AIT:B

产品描述DDR DRAM,
产品类别存储    存储   
文件大小3MB,共104页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
下载文档 详细参数 全文预览

MT46H64M32LFMA-6AIT:B概述

DDR DRAM,

MT46H64M32LFMA-6AIT:B规格参数

参数名称属性值
厂商名称Micron Technology
包装说明,
Reach Compliance Codecompliant
内存集成电路类型DDR DRAM
Base Number Matches1

文档预览

下载PDF文档
Preliminary
2Gb: x16, x32 Automotive Mobile LPDDR SDRAM
Features
Automotive Mobile LPDDR SDRAM
MT46H128M16LF – 32 Meg x 16 x 4 Banks
MT46H64M32LF – 16 Meg x 32 x 4 Banks
MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2
MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4
MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4
Features
• V
DD
/V
DDQ
= 1.70–1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data; one mask
per byte
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• Temperature-compensated self refresh (TCSR)
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh; 32ms for the automotive temperature
range
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-54
-6
-75
Clock Rate
200 MHz
185 MHz
166 MHz
133 MHz
Access Time
5.0ns
5.0ns
5.0ns
6.0ns
Options
• V
DD
/V
DDQ
– 1.8V/1.8V
• Configuration
– 128 Meg x 16 (32 Meg x 16 x 4 banks)
– 64 Meg x 32 (16 Meg x 32 x 4 banks)
• Addressing
– JEDEC-standard
– Reduced page-size
1
– 4-die stack reduced page-size
2
– 2-die stack standard
– 4-die stack standard
• Plastic "green" package
– 60-ball VFBGA (10mm x 10mm)
3
– 90-ball VFBGA (9mm x 13mm)
4
• PoP (plastic "green" package)
– 168-ball VFBGA (12mm x 12mm)
4
– 168-ball WFBGA (12mm x 12mm)
4
– 168-ball WFBGA (12mm x 12mm)
4
– 240-ball WFBGA (14mm x 14mm)
4
• Timing – cycle time
– 5ns @ CL = 3 (200 MHz)
– 5.4ns @ CL = 3 (185 MHz)
– 6ns @ CL = 3 (166 MHz)
– 7.5ns @ CL = 3 (133 MHz)
• Power
– Standard I
DD2
/I
DD6
• Product grade
– Automotive (package-level burn-in)
• Operating temperature range
– From –40˚C to +85˚C
– From –40˚C to +105˚C
1
• Design revision
Notes:
1.
2.
3.
4.
Mark
H
128M16
64M32
LF
LG
R4
L2
L4
B7
CX
JV
KQ
MA
MC
-5
-54
-6
-75
None
A
IT
AT
:B
Contact factory for availability.
Available in the 168-ball JV package only.
Available only for x16 configuration.
Available only for x32 configuration.
PDF: 09005aef84e25f2e
t79m_ait_aat_mobile_lpddr.pdf - Rev. A 08/12 EN
1
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
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