DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3307
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3307 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3307
PACKAGE
TO-3P
FEATURES
•
Super low on-state resistance:
R
DS(on)1
= 9.5 mΩ MAX. (V
GS
= 10 V, I
D
= 35 A)
R
DS(on)2
= 14 mΩ MAX. (V
GS
= 4.0 V, I
D
= 35 A)
•
Low C
iss
: C
iss
= 4650 pF TYP.
•
Built-in gate protection diode
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
V
DSS
V
GSS(AC)
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
60
±20
±70
±280
120
3.0
150
–55 to +150
45
202
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= 20 V
→
0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
1.04
41.7
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14129EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999, 2000
2SK3307
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
I
F
= 70 A, V
GS
= 0 V
I
F
= 70 A, V
GS
= 0 V,
di/dt = 100 A/
µ
s
I
D
= 70 A , V
DD
= 48 V, V
GS
= 10 V
I
D
= 35 A, V
GS(on)
= 10 V, V
DD
= 30 V,
R
G
= 10
Ω
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 35 A
V
GS
= 10 V, I
D
= 35 A
V
GS
= 4.0 V, I
D
= 35 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
1.5
30
2.0
47
7.5
10.5
4650
780
380
90
1260
270
370
90
14
24
1.0
60
110
9.5
14
MIN.
TYP.
MAX.
10
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
50
Ω
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
90%
90%
V
GS
V
GS
Wave Form
0
10%
V
GS
(on)
90%
I
AS
I
D
V
DD
I
D
I
D
Wave Form
0 10%
10%
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D14129EJ3V0DS
2SK3307
TYPICAL CHARACTERISTICS (T
A
= 25°C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
175
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
150
125
100
75
50
25
0
0
20
40
60
80
100
120 140
160
0
20
40
60
80
100
120 140
160
T
ch
- Channel Temperature -
˚C
T
C
- Case Temperature - ˚C
5
1000
FORWARD BIAS SAFE OPERATING AREA
I
D(pulse)
PW
10
0
µ
s
I
D
- Drain Current - A
100
d
ite
im 0 V)
)
L
1
on
=
S(
R
D
t V
GS
(a
10
Po
Lim wer
D
ite D
C
d issip
ati
on
10
ms
1m
s
=1
0
µ
s
1
T
C
= 25˚C
0.1 Single Pulse
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 41.7 ˚C/W
10
1
R
th(ch-C)
= 1.04 ˚C/W
0.1
0.01
10
µ
Single Pulse
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14129EJ3V0DS
3
2SK3307
FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
I
D
- Drain Current - A
300
250
200
150
100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
=10 V
I
D
- Drain Current - A
100
10
1
T
A
=
−50˚C
25˚C
75˚C
150˚C
4.0 V
50
0
0
1
2
3
0.1
1
2
3
4
V
DS
= 10 V
6
5
Pulsed
4
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 10 V
Pulsed
10
T
A
= 150˚C
75˚C
25˚C
−50˚C
1
10
I
D
= 35 A
0.1
0.1
0
0
5
10
15
20
V
GS
- Gate to Source Voltage - V
1
10
100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
3
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
2.5
2
1.5
1
0.5
0
−50
V
DS
= 10 V
I
D
= 1 mA
20
V
GS
= 4.0 V
10
10 V
0
0.1
1
10
100
1000
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D14129EJ3V0DS
2SK3307
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
Pulsed
20
V
GS
= 4.0 V
15
10
V
GS
= 10 V
100
V
GS
= 0 V
10
10 V
5
0
I
D
= 35 A
−50
0
50
100
150
T
ch
- Channel Temperature - ˚C
1
0
0.4
0.8
1.2
1.6
2.0
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
SWITCHING CHARACTERISTICS
10000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= 0 V
f = 1 MHz
t
r
1000
t
d(off)
100
t
d(on)
10
0.1
10000
C
iss
1000
t
f
C
oss
C
rss
100
0.1
1
10
100
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
V
GS
- Gate to Source Voltage - V
80
60
V
DD
= 48 V
30 V
12 V
V
GS
8
100
6
40
4
10
20
0
0
20
V
DS
40
60
I
D
= 70 A
2
0
100 120 140 160
1
0.1
1.0
10
100
80
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D14129EJ3V0DS
5
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