2SK2424
Silicon N Channel MOS FET
Application
High speed power switching
TO–220CFM
Features
•
•
•
•
•
Low on–resistance
High speed switching
Low drive current
No Secondary Breakdown
Suitable for Switching regulator, DC – DC
converter
2
12
1
3
1. Gate
2. Drain
3. Source
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch**
Tch
Tstg
Ratings
450
±30
8
32
8
35
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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*
PW
≤
10 µs, duty cycle
≤
1 %
**
Value at Tc = 25 °C
2SK2424
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
450
Typ
—
Max
—
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±25 V, V
DS
= 0
V
DS
=450 V, V
GS
= 0
I
D
= 1 mA, VDS = 10 V
I
D
= 4 A
V
GS
= 10 V *
I
D
= 4 A
V
DS
= 10 V *
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 4 A
V
GS
= 10 V
R
L
= 7.5Ω
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±30
—
—
V
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—
—
2.0
—
—
—
—
0.4
±10
250
3.0
0.55
µA
µA
V
Ω
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5.0
7.5
—
S
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Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
* Pulse Test
See characteristics curves of 2SK1165.
—
—
—
—
—
—
—
—
1450
410
55
20
55
130
50
0.95
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
I
F
= 8 A, V
GS
= 0
IF = 8 A, V
GS
= 0,
diF / dt = 100 A / µs
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—
380
—
ns
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