PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ601
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER
2SJ601
2SJ601-Z
PACKAGE
TO-251
TO-252
FEATURES
•
Low on-state resistance:
R
DS(on)1
= 31 mΩ MAX. (V
GS
= –10 V, I
D
= –18 A)
R
DS(on)2
= 46 mΩ MAX. (V
GS
= –4.0 V, I
D
= –18 A)
•
Low C
iss
: C
iss
= 3300 pF TYP.
•
Built-in gate protection diode
•
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
GS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
–60
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
m
20
m
36
m
120
65
1.0
150
–55 to +150
–35
123
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= –20 V
¡
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14646EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
©
2000
2SJ601
•
The information in this document is current as of November, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
•
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third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
•
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
•
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(Note)
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4
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