8050S
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.55
±0.2
NPN Silicon
General Purpose Transistor
TO-92
3.5
±0.2
4.5
±0.2
FEATURES
Power dissipation
P
CM:
Collector current
I
CM:
0.5
A
0.46
+0.1
–0.1
0.625 W (Tamb=25
C
)
14.3
±0.2
0.43
+0.08
–0.07
Collector-base voltage
V
(BR)CBO
: 40
V
(1.27
Typ.)
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +
150 C
1 2 3
1.25
–0.2
+0.2
1: Emitter
2: Collector
3: Base
2.54
±0.1
ELECTRICAL CHARACTERISTICS (Tamb
=25 C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
unless otherwise specified)
Test
conditions
MIN
40
25
5
0.1
0.1
0.1
85
50
0.6
1.2
V
V
300
TYP
MAX
UNIT
V
V
V
Ic= 100
µA
, I
E
=0
Ic= 1 mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
= 40V, I
E
=0
V
CE
= 20V, I
B
=0
V
EB
= 3V, I
C
=0
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 500mA
I
C
=500mA, I
B
=50 mA
I
C
=500mA, I
B
=50 mA
V
CE
= 6 V, IC=20mA
µ
A
µ
A
µ
A
Transition frequency
f
T
f =
30MHz
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
B
85-160
C
120-200
D
160-300
Any changing of specification will not be informed individual
Page 1 of 2
8050S
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
Typical Characteristics
0.5
1000
V
CE
= 1V
I
C
[mA], COLLECTOR CURRENT
I
B
= 3.0mA
0.4
I
B
= 2.5mA
0.3
h
FE
, DC CURRENT GAIN
2.0
100
I
B
= 2.0mA
I
B
= 1.5mA
0.2
10
I
B
= 1.0mA
0.1
I
B
= 0.5mA
1
0.1
0
0.4
0.8
1.2
1.6
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
10000
100
I
C
= 10 I
B
V
CE
= 1V
V
BE
(sat)
1000
I
C
[mA], COLLECTOR CURRENT
10
100
1000
10
100
1
V
CE
(sat)
10
0.1
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
1000
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
I
E
= 0
f = 1MHz
V
CE
= 10V
C
ob
[pF], CAPACITANCE
100
100
10
10
1
1
10
100
1
1
10
100
400
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page
2
of
2
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