2SC5132A
Silicon NPN Triple Diffused Planar
Application
Character display horizontal deflection output
TO–3PFM (N)
Features
• High breakdown voltage
V
CES
= 1500 V, I
C
= 8 A
• Built–in damper diode type
• Isolated package
TO-3P•FM
B
C
1
E
2
3
1. Base
2. Collector
3. Emitter
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
Diode current
Note: 1. Value at Tc = 25°C
Symbol
V
CES
V
EBO
I
C
ic(surge)
P
C
*
1
T
j
Tstg
I
D
Ratings
1500
6
8
16
50
150
–55 to +150
6
Unit
V
V
A
A
W
°C
°C
A
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2SC5132A
Electrical Characteristics
(Ta = 25°C)
Item
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Forward voltage of damper
diode
Fall time
Symbol
V
(BR)EBO
I
CES
h
FE
V
CE(sat)
V
BE(sat)
V
ECF
t
f
Min
6
Typ
—
Max
—
Unit
V
Test conditions
I
E
= 400 mA, I
C
= 0
V
CE
= 1500 V, R
BE
= 0
V
CE
= 5 V, IC = 1 A
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—
—
—
—
—
—
500
25
5
µA
—
V
———————————————————————————————————————————
———————————————————————————————————————————
I
C
= 5 A, I
B
= 1.25 A
I
C
= 5 A, I
B
= 1.25 A
I
F
= 6 A
ICP = 5 A, IB1 = 1 A,
fH = 31.5kHz
———————————————————————————————————————————
—
—
1.5
V
———————————————————————————————————————————
—
—
2.0
V
———————————————————————————————————————————
—
0.2
0.4
µsec
———————————————————————————————————————————
Maximum Collector Power
Dissipation Curve
Pc (W)
80
I
C
(A)
20
Area of Safe Operation
f = 15.75 kHz
Ta = 25 °C
For picture tube arcing
(100 V, 16 A)
Collector Power Dissipation
60
40
Collector Current
10
20
(800 V, 3 A)
0.5 mA
0
50
100
Case Temperature
150
Tc (°C)
200
0
800
1200 1600 2000
400
Collector to Emitter Voltage V
CE
(V)
2SC5132A
Typical Output Charactristics
5
I
C
(A)
1.0
A
0.9
A
0.8 A
DC Current Transfer Ratio vs.
Collector Curret
100
h
FE
DC Current Transfer Ratio
50
20
10
5
2
1
0.1
Tc = –25 °C
V
CE
= 5 V
0.2
0.5
1
Collector Current
2
5
I
C
(A)
10
25 °C
75 °C
4
0.7 A
0.6 A
0.5 A
0.4 A
Collector Current
3
0.3 A
0.2 A
2
0.1 A
1
Tc = 25 °C
0
I
B
=0
5
10
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
I
C
/ I
B
= 4
2
1
10
Base to Emitter Saturetion Voltage
V
BE(sat)
(V)
5
2
Base to Emitter Saturation Voltage
vs. Collector current
I
C
/ I
B
= 4
Tc = –25°C
1
75 °C
25 °C
0.5
0.2
0.1
0.2
0.5
1
2
5
Collector Current I
C
(A)
10
Tc = –25 °C
25 °C
75 °C
0.5
0.2
0.1
0.05
0.1
0.2
0.5
1
2
5
Collector Current I
C
(A)
10
2SC5132A
Collector to Emitter Saturation Voltage
vs. Base Current
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
10
Tc = 25 °C
6A
5
I
C
= 4 A
5A
0
0.1
0.2
0.5
1
Base Current
2
I
B
(A)
5
10
Package Outline
16.0 Max
φ
3.2
5.0 ± 0.3
5.8 Max
2.7
4.0
2.6
1.4 Max
1.6
1.4 Max
21.0 ± 0.5
3.2
5.0
19.9 ± 0.3
0.6 ± 0.2
1.0 ± 0.2
5.45 ± 0.5
5.45 ± 0.5
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