HIP6601, HIP6603
Data Sheet
January 2000
File Number
4819
Synchronous-Rectified Buck MOSFET
Drivers
The HIP6601 and HIP6603 are high frequency, dual
MOSFET drivers specifically designed to drive two power
N-Channel MOSFETs in a synchronous-rectified buck
converter topology. These drivers combined with a HIP630x
Multi-Phase Buck PWM controller and Intersil UltraFETs™
form a complete core-voltage regulator solution for
advanced microprocessors.
The HIP6601 drives the lower gate in a synchronous-rectifier
bridge to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603 drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses.
The output drivers in the HIP6601 and HIP6603 have the
capacity to efficiently switch power MOSFETs at frequencies
up to 2MHz. Each driver is capable of driving a 3000pF load
with a 30ns propagation delay and 50ns transition time. Both
products implement bootstrapping on the upper gate with
only an external capacitor required. This reduces
implementation complexity and allows the use of higher
performance, cost effective, N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Lead SOIC Package
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Bridge Shutdown
• Supply Under Voltage Protection
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD®
Athlon™ Microprocessors
• High Frequency Low Profile DC-DC Converters
• High Current Low Voltage DC-DC Converters
Pinout
HIP6601CB/HIP6603CB
(SOIC)
TOP VIEW
Ordering Information
PART NUMBER
HIP6601CB
HIP6603CB
TEMP. RANGE
(
o
C)
0 to 85
0 to 85
PACKAGE
8 Ld SOIC
8 Ld SOIC
PKG. NO.
M8.15
M8.15
UGATE
BOOT
PWM
GND
1
2
3
4
8
7
6
5
PHASE
PVCC
VCC
LGATE
Block Diagram
PVCC
BOOT
UGATE
VCC
PHASE
+5V
10K
PWM
CONTROL
LOGIC
10K
SHOOT-
THROUGH
PROTECTION
†
VCC FOR HIP6601
PVCC FOR HIP6603
†
LGATE
GND
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. 1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 2000
Pentium® is a registered trademark of Intel Corporation. AMD® is a registered trademark of Advanced Micro Devices, Inc.
HIP6601, HIP6603
Typical Application
+12V
+5V
BOOT
VCC
PWM
PVCC
UGATE
DRIVE PHASE
HIP6601
LGATE
+12V
+5V
+5V
BOOT
+VCORE
VFB
VCC
VSEN
PGOOD
COMP
VCC
PWM1
PWM2
PWM3
PWM
PVCC
UGATE
DRIVE PHASE
HIP6601
LGATE
VID
MAIN
CONTROL
HIP6301
ISEN1
ISEN2
FS
GND
ISEN3
+5V
BOOT
PVCC
VCC
PWM
DRIVE PHASE
HIP6601
LGATE
UGATE
+12V
2
HIP6601, HIP6603
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
BOOT
- V
PHASE
). . . . . . . . . . . . . . . . . . . . . . . .15V
Input Voltage (V
PWM
) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V
UGATE . . . . . . . . . . . . . . . . . . . . . . V
PHASE
- 0.3V to V
BOOT
+ 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to V
PVCC
+ 0.3V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7) . . . . .3kV
Machine Model (Per EIAJ ED-4701 Method C-111). . . . . . . .200V
Thermal Information
Thermal Resistance
θ
JA
(
o
C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
113
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
(SOIC - Lead Tips Only)
Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . 0
o
C to 85
o
C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . 125
o
C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
±10%
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . . . . . . 5V to 12V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
VCC SUPPLY CURRENT
Bias Supply Current
Recommended Operating Conditions, Unless Otherwise Noted
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
VCC
I
PVCC
HIP6601, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6603, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6601, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6603, f
PWM
= 1MHz, V
PVCC
= 12V
-
-
-
-
4.4
2.5
200
1.8
6.2
3.6
430
3.3
mA
mA
µA
mA
Power Supply Current
POWER-ON RESET
VCC Rising Threshold
VCC Falling Threshold
PWM INPUT
Input Current
PWM Rising Threshold
PWM Falling Threshold
UGATE Rise Time
LGATE Rise Time
UGATE Fall Time
LGATE Fall Time
UGATE Turn-Off Propagation Delay
LGATE Turn-Off Propagation Delay
Shutdown Window
Shutdown Holdoff Time
OUTPUT
Upper Drive Source Impedance
R
UGATE
R
UGATE
R
LGATE
R
LGATE
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= V
PVCC
= 12V
Upper Drive Sink Impedance
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= 12V, V
PVCC
= 12V
Lower Drive Source Impedance
V
VCC
= 12V, V
PVCC
= 5V
V
VCC
= 12V, V
PVCC
= 12V
Lower Drive Sink Impedance
V
VCC
= V
PVCC
= 12V
-
-
-
-
-
-
-
2.5
7.0
2.3
1.0
4.5
9.0
1.5
3.0
7.5
2.8
1.3
5.0
9.5
2.9
Ω
Ω
Ω
Ω
Ω
Ω
Ω
TR
UGATE
TR
LGATE
TF
UGATE
TF
LGATE
V
PVCC
= V
VCC
= 12V, 3nF load
V
PVCC
= V
VCC
= 12V, 3nF load
V
PVCC
= V
VCC
= 12V, 3nF load
V
PVCC
= V
VCC
= 12V, 3nF load
I
PWM
V
PWM
= 0 or 5V (See Block Diagram)
-
3.6
-
-
-
-
-
-
-
1.5
-
500
3.7
1.3
20
50
20
20
30
20
-
230
-
-
1.4
-
-
-
-
-
-
3.6
-
µA
V
V
ns
ns
ns
ns
ns
ns
V
ns
9.7
9.0
9.9
9.1
10.0
9.2
V
V
TPDL
UGATE
V
VCC
= V
PVCC
= 12V, 3nF load
TPDL
LGATE
V
VCC
= V
PVCC
= 12V, 3nF load
3
HIP6601, HIP6603
Functional Pin Description
UGATE (Pin 1)
Upper gate drive output. Connect to gate of high-side power
N-Channel MOSFET.
PVCC (Pin 7)
For the HIP6601, this pin supplies the upper gate drive bias.
Connect this pin from +12V down to +5V.
For the HIP6603, this pin supplies both the upper and lower
gate drive bias. Connect this pin to either +12V or +5V.
BOOT (Pin 2)
Floating bootstrap supply pin for the upper gate drive.
Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to
turn on the upper MOSFET. See the Internal Bootstrap
Device section under DESCRIPTION for guidance in
choosing the appropriate capacitor value.
PHASE (Pin 8)
Connect this pin to the source of the upper MOSFET and the
drain of the lower MOSFET. The PHASE voltage is
monitored for adaptive shoot-through protection. This pin
also provides a return path for the upper gate drive.
Description
Operation
Designed for versatility and speed, the HIP6601 and HIP6603
dual MOSFET drivers control both high-side and low-side N-
Channel FETs from one externally provided PWM signal.
The upper and lower gates are held low until the driver is
initialized. Once the VCC voltage surpasses the VCC Rising
Threshold (See Electrical Specifications), the PWM signal
takes control of gate transitions. A rising edge on PWM
initiates the turn-off of the lower MOSFET (see Timing
Diagram). After a short propagation delay [TPDL
LGATE
], the
lower gate begins to fall. Typical fall times [TF
LGATE
] are
provided in the Electrical Specifications section. Adaptive
shoot-through circuitry monitors the LGATE voltage and
determines the upper gate delay time [TPDH
UGATE
] based
on how quickly the LGATE voltage drops below 1.0V. This
prevents both the lower and upper MOSFETs from
conducting simultaneously or shoot-through. Once this delay
period is complete the upper gate drive begins to rise
[TR
UGATE
] and the upper MOSFET turns on.
PWM (Pin 3)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation, see the
three-state PWM Input section under DESCRIPTION for further
details. Connect this pin to the PWM output of the controller.
GND (Pin 4)
Bias and reference ground. All signals are referenced to this
node.
LGATE (Pin 5)
Lower gate drive output. Connect to gate of the low-side
power N-Channel MOSFET.
VCC (Pin 6)
Connect this pin to a +12V bias supply. Place a high quality
bypass capacitor from this pin to GND.
Timing Diagram
PWM
TPDH
UGATE
TPDL
UGATE
TR
UGATE
TF
UGATE
UGATE
LGATE
TF
LGATE
TPDL
LGATE
TPDH
LGATE
TR
LGATE
4
HIP6601, HIP6603
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [TPDL
UGATE
] is encountered before the
upper gate begins to fall [TF
UGATE
]. Again, the adaptive
shoot-through circuitry determines the lower gate delay time,
TPDH
LGATE
. The PHASE voltage is monitored and the lower
gate is allowed to rise after PHASE drops below 0.5V. The
lower gate then rises [TR
LGATE
], turning on the lower
MOSFET.
The bootstrap capacitor must have a maximum voltage
rating above VCC + 5V. The bootstrap capacitor can be
chosen from the following equation:
Q
GATE
-
C
BOOT
≥
-----------------------
∆V
BOOT
Where Q
GATE
is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The
∆V
BOOT
term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose a HUF76139 is chosen as the
upper MOSFET. The gate charge, Q
GATE
, from the data
sheet is 65nC for a 10V upper gate drive. We will assume a
200mV droop in drive voltage over the PWM cycle. We find
that a bootstrap capacitance of at least 0.325µF is required.
The next larger standard value capacitance is 0.33µF.
Three-State PWM Input
A unique feature of the HIP660X drivers is the addition of a
shutdown window to the PWM input. If the PWM signal
enters and remains within the shutdown window for a set
holdoff time, the output drivers are disabled and both
MOSFET gates are pulled and held low. The shutdown state
is removed when the PWM signal moves outside the
shutdown window. Otherwise, the PWM rising and falling
thresholds outlined in the ELECTRICAL SPECIFICATIONS
determine when the lower and upper gates are enabled.
Gate Drive Voltage Versatility
The HIP6601 and HIP6603 provide the user total flexibility in
choosing the gate drive voltage. The HIP6601 lower gate
drive is fixed to VCC [+12V], but the upper drive rail can
range from 12V down to 5V depending on what voltage is
applied to PVCC. The HIP6603 ties the upper and lower
drive rails together. Simply applying a voltage from 5V up to
12V on PVCC will set both driver rail voltages.
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection
to prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to rise.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 1.0V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the PHASE voltage during UGATE turn-off. Once
PHASE has dropped below a threshold of 0.5V, the LGATE
is allowed to rise. PHASE continues to be monitored during
the lower gate rise time. If the PHASE voltage exceeds the
0.5V threshold during this period and remains high for longer
than 2µs, the LGATE transitions low. Both upper and lower
gates are then held low until the next rising edge of the PWM
signal.
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction temperature of 125
o
C. The maximum
allowable IC power dissipation for the SO8 package is
approximately 800mW. When designing the driver into an
application, it is recommended that the following calculation
be performed to ensure safe operation at the desired
frequency for the selected MOSFETs. The power dissipated
by the driver is approximated as:
3
-
P
=
1.05f
sw
--
V
U
Q
+
V
L
Q
+
I
DDQ
V
2
L
CC
U
Power-On Reset (POR) Function
During initial startup, the VCC voltage rise is monitored and
gate drives are held low until a typical VCC rising threshold
of 9.9V is reached. Once the rising VCC threshold is
exceeded, the PWM input signal takes control of the gate
drives. If VCC drops below a typical VCC falling threshold of
9.1V during operation, then both gate drives are again held
low. This condition persists until the VCC voltage exceeds
the VCC rising threshold.
Internal Bootstrap Device
Both drivers feature an internal bootstrap device. Simply
adding an external capacitor across the BOOT and PHASE
pins completes the bootstrap circuit.
where f
sw
is the switching frequency of the PWM signal. V
U
and V
L
represent the upper and lower gate rail voltage. Q
U
and Q
L
is the upper and lower gate charge determined by
MOSFET selection and any external capacitance added to
the gate pins. The I
DDQ
V
CC
product is the quiescent power
of the driver and is typically 30mW.
The power dissipation approximation is a result of power
transferred to and from the upper and lower gates. But, the
internal bootstrap device also dissipates power on-chip
during the refresh cycle. Expressing this power in terms of
the upper MOSFET total gate charge is explained below.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
