Ordering number : ENN3706B
2SC4637LS
NPN Triple Diffused Planar Silicon Transistor
2SC4637LS
1800V / 15mA High-Voltage Amplifier,
High-Voltage Switching Applications
Features
•
•
•
•
Package Dimensions
unit : mm
2079D
[2SC4637LS]
10.0
3.2
4.5
2.8
High breakdown voltage(VCEO min=1800V).
Small Cob(typical Cob=1.8pF).
Full-isolation package.
High reliability(Adoption of HVP process).
3.5
7.2
16.1
16.0
3.6
0.9
1.2
1.2
0.75
1 2 3
14.0
0.7
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
Ratings
2000
1800
5
15
50
2
150
--55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
2.55
2.55
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB=1800V, IE=0
VEB=4V, IC=0
VCE=5V, IC=300µA
VCE=10V, IC=300µA
10
6
Ratings
min
typ
max
1
1
60
MHz
Unit
µA
µA
2.4
0.6
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6928 No.3706-1/3
2SC4637LS
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Thermal Resistance
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
Rthj-c
Conditions
IC=600µA, IB=120µA
IC=600µA, IB=120µA
IC=100µA, IE=0
IC=100µA, RBE=∞
IE=10µA, IC=0
VCB=100V, f=1MHz
Junction – case
2000
1800
5
1.8
8.3
Ratings
min
typ
max
5
2
Unit
V
V
V
V
V
pF
°C
/ W
20
µ
A
500
IC -- VCE
14µA
18µA
16µA
12µA
10µA
Collector Current, IC -- mA
10
IC -- VCE
900µA
800µA
700µA
600µA
1m
A
Collector Current, IC --
µA
400
8
A
500
µ
A
400
µ
300
µ
A
300
8µA
6
200
µ
A
100µA
6µA
200
4
4µA
100
50µA
2
2µA
IB=0
0
2
4
6
8
10
ITR07379
0
0
0
2
4
6
8
IB=0
10
ITR07380
Collector-to-Emitter Voltage, VCE -- V
100
7
5
hFE -- IC
Collector-to-Emitter Voltage, VCE -- V
16
14
IC -- VBE(on)
Ta=120°C
VCE=5V
Collector Current, IC -- mA
DC Current Gain, hFE
25
°C
3
2
12
10
8
6
4
2
0
25
°C
10
7
5
3
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
ITR07381
0
0.2
0.4
0.6
--40
°C
0.8
1.0
--40
°
C
Ta=120
°
C
1.2
1.4
Collector Current, IC -- mA
2
Base-to-Emitter ON Voltage, VBE(on) -- V
5
3
ITR07382
f T -- IC
VCE=10V
Output Capacitance, Cob -- pF
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, f T -- MHz
10
7
5
2
7
5
3
2
3
2
1.0
1.0
2
3
5
7
0.1
2
3
5
7
1.0
2
3
5
7
5
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector Current, IC -- mA
ITR07383
Collector-to-Base Voltage, VCB -- V
5 7 100
ITR07384
No.3706-2/3
2SC4637LS
10
7
VCE(sat) -- IC
IC / IB=5
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
7
5
VBE(sat) -- IC
IC / IB=5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
3
2
1.0
7
5
3
2
1.0
7
5
Ta=
--40
°C
C
Ta=120
°
25
°C
25
°C
0.1
3
5
7 0.1
2
3
C
--40
°
5
7 1.0
2
3
5
7 10
2
ITR07385
120
°
C
3
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- mA
100
7
5
3
ASO
Collector Current, IC -- mA
2.4
7 10
2
ITR07386
PC -- Ta
ICP=50mA
IC=15mA
2
10
7
5
3
2
1.0
7
5
3
2
0.1
5
Collector Dissipation, PC -- W
Collector Current, IC -- mA
≤100µs
20
50
0
µ
s
0
µ
1m
s
10
s
m
DC
s
op
er
ati
on
2.0
1.6
No
1.2
he
at
sin
k
0.8
0.4
Tc=25°C
Single pulse
7
100
2
3
5
7
1000
2
3
5
0
0
20
40
60
80
100
120
140
160
ITR07387
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta --
°C
ITR07388
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.
PS No.3706-3/3
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