2SC4529
Silicon NPN Epitaxial
VHF Wide Band Amplifier
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol Rating Unit
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
P
C*1
Junction temperature
Storage temperature
Tj
Tstg
30
20
3
300
500
1
5
150
°C
V
V
V
mA
TO-126 MOD
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mA
W
1
2
3
1. Emitter
2. Collector
3. Base
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——–———–
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–55 to °C
+150
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Note: 1. Value at T
C
= 25°C.
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector cutoff current
Emitter cutoff Current
DC current transfer ratio
Collector to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Min
Typ
—
—
—
—
—
—
2.2
4.7
Max
—
—
1.0
10
200
1.0
—
—
V
GHz
pF
Unit
V
V
µA
µA
Test condition
I
C
= 100 µA, I
E
= 0
I
C
= 1 mA, R
BE
=
∞
V
CB
= 25 V, I
E
= 0
V
EB
= 3 V, I
C
= 0
V
CE
= 5 V, I
C
= 50 mA
I
C
= 100 mA, I
B
= 10 mA
V
CE
= 5 V, I
C
= 50 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
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V
(BR)CBO
30
V
(BR)CEO
20
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
—
—
50
—
1.5
—
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