BRIGHT LED ELECTRONICS CORP.
BPT-BP1A34
END- LOOK PACKAGE
PHOTOTRANSISTOR
Features
1. Wide range of collector current.
2. high sensitivity.
3. Low cost plastic package.
4. Lens Appearance: Black
5. This product doesn't contain restriction
substance, comply RoHS standard
●
Package Dimensions:
Collector
5.7(.224)
Emitter
Emitter
5.0(.197)
Collector
8.6(.339)
1.0(.039)
1.5(.059) MAX.
Description
The BPT-BP1A34 is a NPN silicon phototransistor
mounted in a lensed , special dark plastic package .
The lensing effect of the package allows an
acceptance half view angle of 30∘that is
measured from the optical axis to the half
power point .
NOTES:
2.54(.100) NOM.
0.5(.020) SQ.TYP.
23.4(.921) MIN.
1.00(.039) MIN.
1.All dimensions are in millimeters (inches).
2.Tolerance is ±0.25mm (0.01’) unless otherwise specified.
3.Lead spacing is measured where the leads emerge from the package
4.Specifications are subject to change without notice
Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation
Collector- Emitter Voltage
Emitter- Collector Voltage
Operating Temperature
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
30
5
-40℃~+85℃
-45℃~+100℃
Unit
mW
V
V
260℃ for 5 seconds
Rev:1.0
Page 1 of 5
BRIGHT LED ELECTRONICS CORP.
BPT-BP1A34
Electrical Characteristics
(
TA=2
5℃
unless otherwise noted)
PARAMETER
Collector- Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector- Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
On State Collector Current
SYMBOL
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
T
r
T
f
I
CEO
I
C(ON)
MIN
30
5
-
-
-
-
-
TYP
-
-
-
15
15
-
1.0
MAX
-
-
0.5
-
-
100
-
UNITS
V
V
V
μS
μS
nA
mA
TEST CONDITIONS
I
C
=0.1mA Ee=0mW/cm
2
I
R
=0.1mA Ee=0 mW/cm
2
I
C
=0.1 mA Ee=1.0 mW/cm
2
Vcc=5V R
L
=1KΩ I
C
=1mA
Vcc=5V R
L
=1KΩ I
C
=1mA
V
CE
=10V E
e
=0 mW/cm
2
V
CE
=5V E
e
=1.0mW/cm
2
Typical Optical-Electrical Characteristic Curves
Relative Response vs.
Wavelength
1.0
(uA)
10000
1000
FIG.1 Dark Current Vs.
Ambient Temperature
(mW)
120
100
Power Dissipation Pd
80
60
40
20
FIG.2 Power Dissipation Vs.
Ambient Temperature
Relative Response-%
0.8
0.6
100
Dark Current
700
800
900
1000
1100
0.4
10
1
0.1
0.01
0
20
60 80 100
40
Ambient Temperature
120 (°C)
0.2
0.0
λ
-Wavelength-nm
0
-25
0
25
50 75 100
Ambient Temperature
125 (°C)
(us)
FIG.3 Rise And Fall Time Vs.
Load Resistance
20
Vcc=5V
FIG.4 Relative Collector Current Vs.
Irradiance
2.5
Relative Collector Current
Vce=5V
16
Rise and Fall Time
12
8
4
0
F=100Hz
2.0
1.5
1.0
0.5
0
0
0.5
1.0 1.5
2.0 2.5
2
3.0 (mW/cm )
Tf
Tr
0
0.2
0.4
0.6
0.8
1.0 (K )
Load Resistance
Irradiance
Rev: 1.0
Page 2 of 5
BRIGHT LED ELECTRONICS CORP.
BPT-BP1A34
●
Dip Soldering
300
TEMPERATURE( °C)
250
200
150
100
50
30
10
20
30
Fluxing
Preheat
Max:260℃,5sec.
Suggest:2~3sec.
40
50
60
70
80
90
100
110
120
TIME(sec.)
1. Please avoid any external stress applied to the lead-frames and
epoxy while the LEDs are at high temperature, especially during soldering
2. DIP soldering and hand soldering should not be done more than one time.
3. After soldering, avoid the epoxy lens from mechanical shock or
vibration until the LEDs are back to room temperature.
4. Avoid rapid cooling during temperature ramp-down process
5. Although the soldering condition is recommended above,
soldering at the lowest possible temperature is feasible for the LEDs
●
IRON
Soldering
A：Max：350℃ Within 3 sec. One time only.
B：The products of 3mm without flange, welding condition of flat plate PCB Max：
350℃ Within 2 sec. One time only
3.0(.118)
PCB
BRIGHT LED ELECTRONICS CORP.
BPT-BP1A34
●
Tapping and packaging specifications(Units: mm)
Packaging Bag Dimensions
Notes:
1、500pcs per bag, 5Kpcs per box.
2、All dimensions are in millimeters(inches).
3、Specifications are subject to change without notice.
Rev: 1.0
Page 4 of 5
BRIGHT LED ELECTRONICS CORP.
BPT-BP1A34
Phototransistor Specification
Commodity:Phototransistor
Intensity Bin Limits (V
CE
=5V,Ee=1.0mW/cm
2
)
BIN CODE
N
P
Q
R
S
T
U
Min.(mA)
0.345
0.497
0.716
1.031
1.485
2.139
3.081
Max.(mA)
0.497
0.716
1.031
1.485
2.139
3.081
4.313
NOTES: Tolerance of measurement of Radiant Intensity
:±15%
Rev: 1.0
Page 5 of 5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
