S E M I C O N D U C T O R
HA-5127/883
Ultra Low Noise, Precision Operational Amplifier
The HA-5127/883 monolithic operational amplifier features
an excellent combination of precision DC and wideband high
speed characteristics. Utilizing the Harris D.I. technology
and advanced processing techniques, this unique design
unites low noise precision instrumentation performance with
high speed, wideband capability.
This amplifier’s impressive list of features include low V
OS
,
wide gain-bandwidth, high open loop gain, and high CMRR.
Additionally, this flexible device operates over a wide supply
range while consuming only 120mW of power.
Using the HA-5127/883 allows designers to minimize errors
while maximizing speed and bandwidth.
This device is ideally suited for low level transducer signal
amplifier circuits. Other applications which can utilize the
HA-5127/883’s qualities include instrumentation amplifiers,
pulse or RF amplifiers, audio preamplifiers, and signal condi-
tioning circuits.
July 1994
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . . . 7V/µs (Min)
• Unity Gain Bandwidth . . . . . . . . . . . . . . . . . 5MHz (Min)
• Low Noise Voltage (at 1kHz) . . . . . . . . 4.5nV/√Hz (Max)
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . .100µV (Max)
• Low Offset Drift With Temperature. . . . 1.8µV/
o
C (Max)
• High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . 100dB (Min)
• High Voltage Gain . . . . . . . . . . . . . . . . . . 700kV/V (Min)
Applications
• High Speed Signal Conditioners
• Wide Bandwidth Instrumentation Amplifiers
• Low Level Transducer Amplifiers
• Fast, Low Level Voltage Comparators
• Highest Quality Audio Preamplifiers
• Pulse/RF Amplifiers
Ordering Information
PART
NUMBER
HA2-5127/883
HA4-5127/883
HA7-5127/883
TEMPERATURE
RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
PACKAGE
8 Pin Can
20 Lead Ceramic LCC
8 Lead CerDIP
Pinouts
HA-5127/883
(CERDIP)
TOP VIEW
NC
BAL
-IN
+IN
V-
1
2
3
4
-
+
8
7
6
5
BAL
V+
OUT
NC
NC
-IN
NC
+IN
NC
4
5
6
7
8
9
NC
10 11 12 13
NC
NC
NC
V-
-
+
HA-5127/883
(CLCC)
TOP VIEW
BAL
BAL
NC
NC
HA-5127/883
(METAL CAN)
TOP VIEW
BAL
8
18 NC
17 V+
16 NC
15 OUT
14 NC
+IN
3
4
V- (CASE)
5
NC
-IN
2
BAL
1
-
+
7 V+
3
2
1 20 19
6 OUT
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
©
Harris Corporation 1994
Spec Number
3-129
511008-883
File Number
3751
Specifications HA-5127/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 44V
Differential Input Voltage (Note 2) . . . . . . . . . . . . . . . . . . . . . . . 0.7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Input Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Differential Output Current . . . . . . . . . . .Full Short Circuit Protection
Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
CerDIP Package . . . . . . . . . . . . . . . . . . . 115
28
o
C/W
Ceramic LCC Package . . . . . . . . . . . . . .
65
o
C/W
15
o
C/W
o
C/W
Metal Can Package . . . . . . . . . . . . . . . . . 155
67
o
C/W
Package Power Dissipation Limit at +75
o
C for T
J
≤
+175
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW
Package Power Dissipation Derating Factor Above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/
o
C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/
o
C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Recommended Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
V
INCM
≤
1/2 (V+ - V-)
R
L
≥
600Ω
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 100kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Input Bias Current
I
B
V
CM
= 0V,
R
S
= 10kΩ, 50Ω
+I
+ -I
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-100
-300
-
-
MAX
100
300
80
150
UNITS
µV
µV
nA
nA
PARAMETERS
Input Offset Voltage
SYMBOL
V
IO
CONDITIONS
V
CM
= 0V
B B
-
-----------------
2
Input Offset Current
I
IO
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 10kΩ
V+ = +4.7V,
V- = -25.3V
V+ = +25.3V,
V- = -4.7V
V
OUT
= 0V and +10V,
R
L
= 2kΩ
V
OUT
= 0V and -10V,
R
L
= 2kΩ
∆V
CM
= +11V
∆V
CM
= +10V
1
2, 3
1
2, 3
1
2, 3
4
5, 6
4
5, 6
1
2, 3
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
-75
-135
10.3
10.3
-
-
700
300
700
300
100
100
100
100
75
135
-
-
-10.3
-10.3
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
kV/V
kV/V
kV/V
kV/V
dB
dB
dB
dB
Common Mode
Range
+CMR
-CMR
Large Signal Voltage
Gain
+A
VOL
-A
VOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
∆V
CM
= -11V
∆V
CM
= -10V
Spec Number
3-130
511008-883
Specifications HA-5127/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 100kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
4
5, 6
-V
OUT1
R
L
= 2kΩ
4
5, 6
+V
OUT2
-V
OUT2
Output Current
+I
OUT
-I
OUT
Quiescent Power
Supply Current
+I
CC
R
L
= 600Ω
R
L
= 600Ω
V
OUT
= -10V
V
OUT
= +10V
V
OUT
= 0V, I
OUT
= 0mA
4
4
4
4
1
2, 3
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
Power Supply
Rejection Ratio
+PSRR
∆V
SUP
= 14V
∆V
SUP
= 13.5V
-PSRR
∆V
SUP
= 14V
∆V
SUP
= 13.5V
Offset Voltage
Adjustment
+V
IO
Adj
Note 1
1
2, 3
1
2, 3
1
2, 3
-V
IO
Adj
Note 1
1
2, 3
NOTE:
1. Offset adjustment range is [V
IO
(Measured)
±1mV]
minimum referred to output. This test is for functionality only to assure adjustment
through 0V.
2. For differential input voltages greater than 0.7V, the input current must be limited to 25mA to protect the back-to-back input diodes.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
11.5
11.5
-
-
10
-
16.5
-
-
-
-4
-4
86
86
86
86
V
IO
-1
V
IO
-1
V
IO
+1
V
IO
+1
MAX
-
-
-11.5
-11.5
-
-10
-
-16.5
4
4
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
mV
mV
mV
mV
PARAMETERS
Output Voltage
Swing
SYMBOL
+V
OUT1
CONDITIONS
R
L
= 2kΩ
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= +1V/V, Unless Otherwise Specified.
GROUP A
SUBGROUP
7
7
7
7
7
7
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
7
7
-
-
-
-
MAX
-
-
150
150
40
40
UNITS
V/µs
V/µs
ns
ns
%
%
PARAMETERS
Slew Rate
SYMBOL
+SR
-SR
CONDITIONS
V
OUT
= -3V to +3V
V
OUT
= +3V to -3V
V
OUT
= 0 to +200mV
10%
≤
T
R
≤
90%
V
OUT
= 0 to -200mV
10%
≤
T
F
≤
90%
V
OUT
= 0 to +200mV
V
OUT
= 0 to -200mV
Rise and Fall Time
t
R
t
F
Overshoot
+OS
-OS
Spec Number
3-131
511008-883
Specifications HA-5127/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
V
= +1V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
Average Offset Voltage Drift
Differential Input Resistance
Low Frequency Peak-to-Peak
Noise
Input Noise Voltage Density
SYMBOL
V
IO
TC
R
IN
E
NP-P
E
N
CONDITIONS
V
CM
= 0V
V
CM
= 0V
0.1Hz to 10Hz
NOTES
1
1
1
TEMPERATURE
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
MIN
-
0.8
-
MAX
1.8
-
0.25
UNITS
µV/
o
C
MΩ
µV
P-P
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
MHz
kHz
V/V
µs
Ω
mW
R
S
= 20Ω, f
O
= 10Hz
R
S
= 20Ω, f
O
= 100Hz
R
S
= 20Ω, f
O
= 1kHz
1
1
1
1
1
1
1
1, 2
1
-
-
-
-
-
-
5
111
±1
-
-
-
10.0
5.6
4.5
4.0
2.3
0.6
-
-
-
Input Noise Current Density
I
N
R
S
= 2MΩ, f
O
= 10Hz
R
S
= 2MΩ, f
O
= 100Hz
R
S
= 2MΩ, f
O
= 1kHz
Unity Gain Bandwidth
Full Power Bandwidth
Minimum Closed Loop Stable
Gain
Settling Time
Output Resistance
Quiescent Power
Consumption
NOTES:
UGBW
FPBW
CLSG
V
O
= 100mV
V
PEAK
= 10V
R
L
= 2kΩ, C
L
= 50pF
To 0.1% for a 10V Step
Open Loop
V
OUT
= 0V, I
OUT
= 0mA
t
S
R
OUT
PC
1
1
1, 3
2
100
120
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on output.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTES:
1. PDA applies to Subgroup 1 only.
2. The Subgroup assignments of the parameters in these tables were patterned after Mil-M-38510/135, with the ex-
ception of V
IO
, which is Subgroups 1, 2, 3.
SUBGROUPS (SEE TABLES 1 AND 2)
(NOTE 2)
1
1 (Note 1), 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7
1
Spec Number
3-132
511008-883
HA-5127/883
Die Characteristics
DIE DIMENSIONS:
104 x 65 x 19 mils
±
1 mils
2650 x 1650 x 483µm
±
25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ
±
2kÅ
Nitride Thickness: 3.5kÅ
±
1.5kÅ
WORST CASE CURRENT DENSITY:
3.6 x 10
5
A/cm
2
This device meets Glassivation Integrity Test Requirement
per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph 30.5.5.4.
SUBSTRATE POTENTIAL (Powered Up):
V-
TRANSISTOR COUNT:
63
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5127/883
BAL
BAL
-IN
V+
+IN
OUT
V-
NC
Spec Number
3-133
511008-883
stm32/stm8
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