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IS45LV16100-60TA1

产品描述EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
产品类别存储    存储   
文件大小125KB,共21页
制造商Integrated Silicon Solution ( ISSI )
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IS45LV16100-60TA1概述

EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44

IS45LV16100-60TA1规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码TSOP2
包装说明0.400 INCH, PLASTIC, TSOP2-50/44
针数50
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式FAST PAGE WITH EDO
最长访问时间60 ns
其他特性RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型COMMON
JESD-30 代码R-PDSO-G44
JESD-609代码e0
长度20.95 mm
内存密度16777216 bit
内存集成电路类型EDO DRAM
内存宽度16
湿度敏感等级3
功能数量1
端口数量1
端子数量44
字数1048576 words
字数代码1000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织1MX16
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码TSOP2
封装等效代码TSOP44/50,.46,32
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度)NOT SPECIFIED
电源3.3 V
认证状态Not Qualified
刷新周期1024
座面最大高度1.2 mm
自我刷新YES
最大待机电流0.002 A
最大压摆率0.145 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.8 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度10.16 mm
Base Number Matches1

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IS45C16100
IS45LV16100
1M x 16 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI
DESCRIPTION
®
PRELIMINARY INFORMATION
OCTOBER 2002
FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
Auto refresh Mode:
1,024 cycles /16 ms
RAS-Only, CAS-before-RAS
(CBR), and Hidden
Self refresh Mode
- 1,024 cycles / 128ms
• JEDEC standard pinout
• Single power supply:
5V ± 10% (IS45C16100)
3.3V ± 10% (IS45LV16100)
• Byte Write and Byte Read operation via two
CAS
Automotive Temperature Range:
Option A:
Option A1:
0°C to +70°C
-40°C to +85°C
The
ISSI
IS45C16100 and IS45LV16100 are 1,048,576 x 16-
bit high-performance CMOS Dynamic Random Access Memo-
ries. These devices offer an accelerated cycle access called
EDO Page Mode. EDO Page Mode allows 1,024 random
accesses within a single row with access cycle time as short as
20 ns per 16-bit word. The Byte Write control, of upper and lower
byte, makes the IS45C16100 ideal for use in 16-bit and 32-bit
wide data bus systems.
These features make the IS45C16100and IS45LV16100 ideally
suited for high-bandwidth graphics, digital signal processing,
high-performance computing systems, and peripheral applications.
The IS45C16100 and IS45LV16100 are packaged in a 42-pin
400-mil SOJ and 400-mil 50- (44-) pin TSOP (Type II).
PRODUCT SERIES OVERVIEW
Part No.
IS45C16100
IS45LV16100
Refresh
1K
1K
Voltage
5V ± 10%
3.3V ± 10%
KEY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
Min. EDO Page Mode Cycle Time (t
PC
)
Min. Read/Write Cycle Time (t
RC
)
-50
50
13
25
20
84
-60
60
15
30
25
104
Unit
ns
ns
ns
ns
ns
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IIntegrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
10/21/02
1

IS45LV16100-60TA1相似产品对比

IS45LV16100-60TA1 IS45LV16100-60TA IS45C16100-50TA1 IS45C16100-50TA IS45C16100-50KA1 IS45C16100-50KA IS45LV16100-60KA1 IS45LV16100-60KA
描述 EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
零件包装代码 TSOP2 TSOP2 TSOP2 TSOP2 SOJ SOJ SOJ SOJ
包装说明 0.400 INCH, PLASTIC, TSOP2-50/44 0.400 INCH, PLASTIC, TSOP2-50/44 0.400 INCH, PLASTIC, TSOP2-50/44 0.400 INCH, PLASTIC, TSOP2-50/44 0.400 INCH, SOJ-42 0.400 INCH, SOJ-42 0.400 INCH, SOJ-42 0.400 INCH, SOJ-42
针数 50 50 50 50 42 42 42 42
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
最长访问时间 60 ns 60 ns 50 ns 50 ns 50 ns 50 ns 60 ns 60 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-J42 R-PDSO-J42 R-PDSO-J42 R-PDSO-J42
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
长度 20.95 mm 20.95 mm 20.95 mm 20.95 mm 27.305 mm 27.305 mm 27.305 mm 27.305 mm
内存密度 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit
内存集成电路类型 EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM
内存宽度 16 16 16 16 16 16 16 16
湿度敏感等级 3 3 3 3 3 3 3 3
功能数量 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1
端子数量 44 44 44 44 42 42 42 42
字数 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
字数代码 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 70 °C 85 °C 70 °C 85 °C 70 °C
组织 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2 TSOP2 TSOP2 TSOP2 SOJ SOJ SOJ SOJ
封装等效代码 TSOP44/50,.46,32 TSOP44/50,.46,32 TSOP44/50,.46,32 TSOP44/50,.46,32 SOJ42,.44 SOJ42,.44 SOJ42,.44 SOJ42,.44
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V 5 V 5 V 5 V 5 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 1024 1024 1024 1024 1024 1024 1024 1024
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 3.75 mm 3.75 mm 3.75 mm 3.75 mm
自我刷新 YES YES YES YES YES YES YES YES
最大待机电流 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A
最大压摆率 0.145 mA 0.145 mA 0.16 mA 0.16 mA 0.16 mA 0.16 mA 0.145 mA 0.145 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 5.5 V 5.5 V 5.5 V 5.5 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 4.5 V 4.5 V 4.5 V 4.5 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 5 V 5 V 5 V 5 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING GULL WING J BEND J BEND J BEND J BEND
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm

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