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FS16VS-10-T1: 产品描述Power Field-Effect Transistor, 16A I(D), 500V, 0.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN; 产品类别分立半导体晶体管; 文件大小186KB，共4页; 制造商Mitsubishi(日本三菱); 官网地址http://www.mitsubishielectric.com/semiconductors/

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FS16VS-10-T1概述

Power Field-Effect Transistor, 16A I(D), 500V, 0.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

	FS16VS-10-T1	FS16VS-10-T2
描述	Power Field-Effect Transistor, 16A I(D), 500V, 0.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN	Power Field-Effect Transistor, 16A I(D), 500V, 0.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
厂商名称	Mitsubishi(日本三菱)	Mitsubishi(日本三菱)
零件包装代码	TO-220S	TO-220S
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	3	3
Reach Compliance Code	unknown	unknown
外壳连接	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	500 V	500 V
最大漏极电流 (ID)	16 A	16 A
最大漏源导通电阻	0.56 Ω	0.56 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSSO-G2	R-PSSO-G2
元件数量	1	1
端子数量	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	48 A	48 A
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	GULL WING	GULL WING
端子位置	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON
Base Number Matches	1	1

器件捷径: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ