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IS49NLC36800-5B

产品描述DDR DRAM, 8MX36, 5ns, CMOS, PBGA144, FBGA-144
产品类别存储    存储   
文件大小1MB,共34页
制造商Integrated Silicon Solution ( ISSI )
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IS49NLC36800-5B概述

DDR DRAM, 8MX36, 5ns, CMOS, PBGA144, FBGA-144

IS49NLC36800-5B规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码BGA
包装说明FBGA-144
针数144
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式MULTI BANK PAGE BURST
最长访问时间5 ns
其他特性AUTO REFRESH
JESD-30 代码R-PBGA-B144
长度18.5 mm
内存密度301989888 bit
内存集成电路类型DDR DRAM
内存宽度36
功能数量1
端口数量1
端子数量144
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织8MX36
封装主体材料PLASTIC/EPOXY
封装代码TBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE
座面最大高度1.2 mm
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
宽度11 mm
Base Number Matches1

文档预览

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IS49NLC93200,IS49NLC18160,IS49NLC36800
288Mb (x9, x18, x36) Common I/O RLDRAM
2 Memory
DECEMBER 2012
FEATURES
400MHz DDR operation (800Mb/s/pin data rate)
28.8Gb/s peak bandwidth (x36 at 400 MHz clock
frequency)
Reduced cycle time (15ns at 400MHz)
32ms refresh (8K refresh for each bank; 64K refresh
command must be issued in total each 32ms)
8 internal banks
Non-multiplexed addresses (address multiplexing
option available)
SRAM-type interface
Programmable READ latency (RL), row cycle time,
and burst sequence length
Balanced READ and WRITE latencies in order to
optimize data bus utilization
Data mask signals (DM) to mask signal of WRITE
data; DM is sampled on both edges of DK.
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and
output data clock signals
Data valid signal (QVLD)
HSTL I/O (1.5V or 1.8V nominal)
25-60Ω matched impedance outputs
2.5V V
EXT
, 1.8V V
DD
, 1.5V or 1.8V V
DDQ
I/O
On-die termination (ODT) R
TT
IEEE 1149.1 compliant JTAG boundary scan
Operating temperature:
Commercial
(T
C
= 0° to +95°C; T
A
= 0°C to +70°C),
Industrial
(T
C
= -40°C to +95°C; T
A
= -40°C to +85°C)
OPTIONS
Package:
144-ball FBGA (leaded)
144-ball FBGA (lead-free)
Configuration:
32Mx9
16Mx18
8Mx36
Clock Cycle Timing:
Speed Grade
t
RC
t
CK
-25E
15
2.5
-25
20
2.5
-33
20
3.3
-5
20
5
Unit
ns
ns
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
RLDRAM
is a registered trademark of Micron Technology, Inc.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00
I
, 12/10/2012
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