DATA
SHEET
10GBPS 850NM VCSEL
ARRAYS
V850-2092-002, V850-2093-002
FEATURES:
850nm cathode common VCSEL
array
Capable of 10Gbps per channel
modulation
Fully tested and Burned in with
STABILAZE
TM
process
1x4 and 1x12 version
The V850-209x-002 are high-performance 850 nm VCSEL (Vertical Cavity
Surface-Emitting Laser) array die optimized for high-speed data
communications.
The array die are fully
stabilized
and tested, ideal for use in manufacturing
transceivers for parallel optical interconnects. The arrays are available in either
4 or 12 channel configurations.
Each device is a high radiance VCSEL designed to convert electrical current
into optical power that can be used in fiber optic communications and other
applications. As the current varies above threshold, the light intensity
increases proportionally.
The 850-209x-002 are designed to be used with inexpensive silicon or gallium
arsenide detectors, but excellent performance can also be achieved with some
indium gallium arsenide detectors.
The low drive current requirement makes direct drive from PECL (Positive
Emitter Coupled Logic) or ECL (Emitter Coupled Logic) gates possible and
eases driver design.
Designed to interface with 50/125 and 62.5/125μm multimode fiber, the
VCSELs produce circularly symmetric, non-astigmatic, narrow divergence
beams that, with appropriate lensing, fiber couple all of the emitter power.
The top (anode) contact, is a minimum 1μm Au for ease of wire bonding. Wire
bonding should be done with minimal pressure to ensure the VCSEL is not
damaged. The backside common VCSEL cathode is also a minimum of 1μm
Au metallurgy. The die must be mounted using thermally and electrical
conductive media.
The VCSEL arrays are shipped on medium tack blue tape in 6 inch grip rings.
Part Number
850-2092-002
850-2093-002
Description
10Gbps 4 channel VCSEL die array
10Gbps 12 channel VCSEL die array
V850-2092-002, V850-2093-002
10GBPS 850NM VCSEL ARRAY
ABSOLUTE MAXIMUM RATINGS
Parameter
INVISIBLE LASER RADIATION
DO NOT VIEW DIRECTLY WITH
OPTICAL INSTRUMENTS
10mW at 820 - 860nm
CLASS 1M LASER PRODUCT
COMPLIES WITH IEC/EN 60825-1
Ed1.2:2001
COMPLIES WITH 21 CFR 1040.10
AND 1040-10.11 EXCEPT FOR
DEVIATION PURSUANT TO
LASER NOTICE NO.50
DATED 26 JULY 2001
Rating
-40oC to +85oC
0 to +85oC
260oC, 10 seconds
5V
12mA
Storage temperature
Case operating temperature
Lead solder temperature
Reverse Power Supply Voltage
Continuous forward current
Advanced Optical Components
600 Millennium Drive,
Allen, TX 75013
NOTICE:
Stresses greater than those listed under “Absolute
LASER RADIATION
AVOID EXPOSURE TO BEAM
CLASS 1M LASER PRODUCT
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation
of the device at these or any other conditions above those
indicated in the operations section for extended periods of
time may affect reliability.
NOTICE:
The inherent design of this component causes it
to be sensitive to electrostatic discharge (ESD). To prevent
ESD-induced damage and/or degradation to equipment, take
normal ESD precautions when handling this product
V850-2092-002, V850-2093-002
ELECTRICAL-OPTICAL CHARACTERISTICS
TA = 25oC unless otherwise stated
VCSEL Parameters
Optical Output Power
Threshold Current
TA=0 to 70ºC
Threshold Current maximum
TA=25 to 85ºC
deviation from 25oC value
TA=-40 to 25ºC
Temperature at minimum
threshold current
TA=25ºC
Slope Efficiency
TA=-40ºC
TA=85ºC
Slope Efficiency Temperature T =0 to 70ºC
A
Variation
Peak Wavelength
IF=6mA
TA=0 to 70ºC
IF=6mA
TA=-40 to 85ºC
IF=6mA
IF=6mA
Test Condition
IF = 6.5mA
Symbol
PO
ITH
0.5
-0.25
Min.
Typ.
2.0
1
1.5
0.8
1.5
0.75
T0
-20
0.3
0.4
20
0.6
0.75
0.19
0.05
mW/mA
4
oC
3
Max. Uniformity
15%
0.2
0.2
mA
3
Units
mW
mA
Notes
2
Δ
ITH
η
Δη/Δ
T
λ
P
Δλ
P
/Δ
T
Δλ
VF
Pmax
4.0
1.8
-3000
840
-7000
850
0.06
-10000
860
1
ppm/ºC
nm
nm/ºC
5
λ
P Temperature Variation
RMS Spectral Bandwidth
Laser Forward Voltage
Roll over
Rise/Fall Time
Relative Intensity Noise
0.65
2.1
0.1
nm
V
mW
6
7
Pavg = 2mW,
TR
Extinction Ratio = 5dB TF
RIN
40
RS
30
-135
50
40
40
-130
60
75
3
ps
dB/Hz
10GHz BW, IF=6mA
IF = 6mA, TA=25ºC
Series Resistance
TA=-40ºC
TA=85ºC
IF = 6mA,
TA=0 to 70ºC
IF=6mA, F=1MHz
Ohms
Series Resistance
Temperature Coefficient
Capacitance
Beam Divergence
Beam Divergence current
variation
Δ
RS
/Δ
T
C
-3000
0.25
15
0.6
30
10%
10%
10%
ppm/ºC
pF
Degree
Degree/
mA
8
Θ
ΔΘ/Δ
IF
9
Uniformity
is the difference between the maximum and the minimum measured value across the array.
Maximum and Minimum
are defined per array.
V850-2092-002, V850-2093-002
10GBPS 850NM VCSEL ARRAY
NOTES
1.
Reliability is a function of temperature, see
www.finisar.com/aoc.php for details.
For the purpose of these tests, IF is DC current.
Threshold current varies as (TA – T0)2. It may either
increase or decrease with temperature, depending upon
relationship of TA to T0. The magnitude of the change is
proportional to the threshold at T0.
Slope efficiency is defined as
ΔP
O/ΔIF.
To compute the value of Slope Efficiency at a temperature
T, use the following equation:
η(T) ≈ η(25
oC)*[1+(Δη/ΔT)*(T-25)]
6.
Rollover is the power at which a further current increase
does not result in a power increase.
Rise and fall times specifications are the 20% - 80%. Most
of the devices will measure <135ps fall time. Rise and fall
times are sensitive to drive electronics.
To compute the value of Series Resistance at a
temperature T, use the following equation:
RS(T)
≈
RS(25oC)*[1+ΔRS/
ΔT)*(T-25)]
7.
2.
3.
8.
4.
5.
9.) Beam divergence is defined as the total included angle
between the 1/e2 intensity points.
TYPICAL PERFORMANCE CURVES
Emitted Power vs. Current:
Power varies approximately
linearly with current above threshold.
Threshold Current vs. Temperature:
Threshold current
varies parabolically with temperature; thus it can be nearly
constant for a limited temperature range.
V850-2092-002, V850-2093-002
4-CHANNEL ARRAY
12-CHANNEL ARRAY
DIE DIMENSIONS: (μM)
Dimension
Length
Width
Height
4-Channel
965
215
200
12-Channel
2965
215
200
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