FLU10XM
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB=29.5dBm (Typ.)
• High Gain: G1dB=14.5dB (Typ.)
• High PAE:
η
add=47% (Typ.)
• Hermetic Metal/Ceramic (SMT) Package
• Tape and Reel Available
DESCRIPTION
The FLU10XM is a GaAs FET designed for base station applications in the
PCN/PCS frequency range. This is a new product series that uses a surface
mount package that has been optimized for high volume cost driven applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
4.16
-65 to +175
+175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistence of 400Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power Added Efficiency
Thermal Resistance
Case Style:
XM
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
Symbol
I
DSS
gm
V
p
V
GSO
P
1dB
G
1dB
η
add
R
th
Conditions
V
DS
= 5V, V
GS
=0V
V
DS
= 5V, I
DS
=200mA
V
DS
= 5V, I
DS
=15mA
I
GS
= -15µA
V
DS
= 10V
f=2.0 GHz
I
DS
=0.6I
DSS
Channel to Case
Limits
Min. Typ. Max.
-
-
-1.0
-5
28.5
13.5
-
-
300
150
-2.0
-
29.5
14.5
47
25
450
-
-3.5
-
-
-
-
36
Unit
mA
mS
V
V
dBm
dB
%
°C/W
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
1
FLU10XM
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
5
Total Power Dissipation (W)
4
3
2
1
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Drain Current (mA)
300
VGS =0V
-0.5V
200
-1.0V
100
-1.5V
-2.0V
0
50
100
150
200
0
2
4
6
8
10
Case Temperature (°C)
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS
≈
0.6IDSS
f = 2.0 GHz
Output Power (dBm)
30
28
26
24
22
20
8
10
12 14 16
18
η
add
50
Pout
30
20
10
Input Power (dBm)
2
η
add (%)
40
FLU10XM
L-Band Medium & High Power GaAs FET
S11
S22
+j100
0.5 GHz
1
+j50
+j25
+90°
S21
S12
+j10
5
+j250
2
3
4
5
1
0.5 GHz
25
50Ω
100
250
0
3
5
4
180°
8
6
4
2
0°
3
SCALE FOR |S21|
SCALE FOR |S12|
-j10
2
3
1
2
0.5 GHz
-j250
5
.05
-j25
1
0.5 GHz
-j100
0.1
-j50
-90°
S-PARAMETERS
VDS = 10V, IDS = 180mA
FREQUENCY
(MHZ)
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
S11
MAG
1.000
.922
.864
.841
.825
.809
.783
.746
.692
.615
.507
S21
ANG
-17.7
-76.7
-118.5
-140.9
-154.9
-164.9
-173.1
179.4
172.0
164.1
156.6
S12
ANG
167.3
123.4
88.3
64.2
45.1
28.4
13.1
-1.9
-17.3
-33.6
-51.3
S22
ANG
78.4
43.2
14.5
4.8
-3.7
-12.0
-16.9
-20.5
-28.4
-36.3
-48.5
MAG
11.904
9.080
5.928
4.153
3.121
2.498
2.097
1.833
1.655
1.529
1.429
MAG
.005
.020
.026
.028
.028
.028
.028
.031
.034
.037
.042
MAG
.535
.511
.536
.594
.654
.709
.755
.794
.830
.861
.886
ANG
-9.1
-46.1
-74.7
-94.0
-108.7
-120.9
-131.4
-140.9
-149.5
-157.3
-164.5
Download S-Parameters, click here
3
FLU10XM
L-Band Medium & High Power GaAs FET
Case Style "XM"
Metal-Ceramic Hermetic Package
2.865
(0.112)
2.265
(0.089)
2.0±0.15
3.8±0.15
(0.150)
0.5
(0.020)
3.35
(0.132)
2
0.7
(0.028)
4.4±0.15
(0.173)
0.5
(0.020)
45°
3.13±0.15
0.7
(0.028)
6.3
(0.248)
1.7±0.2
(0.067)
0.15±0.05
(0.006)
1. Gate
2. Source
3. Drain
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
4.0±0.15
(0.159)
4.2±0.1
(0.165)
1
3
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