2SK1622
L
, 2SK1622
S
Silicon N-Channel MOS FET
Application
LDPAK
High speed power switching
Features
1
2
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
•
•
•
•
3
1
2
3
2, 4
S type
1
1. Gate
2. Drain
3. Source
4. Drain
3
L type
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch**
Tch
Tstg
Ratings
60
±20
25
100
25
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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*
PW
≤
10 µs, duty cycle
≤
1 %
**
Value at T
C
= 25 °C
2SK1622 L , 2SK1622 S
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static Drain to source on state
resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
Min
60
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A, V
GS
= 10 V *
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±20
—
—
V
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—
—
1.0
—
—
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
* Pulse Test
See characteristic curves of 2SK972.
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
12
—
—
—
—
—
—
—
—
—
—
—
0.033
0.05
20
1400
720
220
15
130
270
180
1.3
±10
250
2.0
0.04
0.06
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
I
F
= 25 A, V
GS
= 0
I
F
= 25 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= 15 A, V
GS
= 10 V,
R
L
= 2
Ω
µA
µA
V
Ω
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I
D
= 15 A, V
GS
= 4 V *
I
D
= 15 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
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—
135
—
ns
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