Power Transistors
2SD2057
Silicon NPN triple diffusion planar type
For horizontal deflection output
Unit: mm
s
q
q
Features
Incorporating a built-in damper diode
Reduction of a parts count and simplification of a circuit are al-
lowed
High breakdown voltage with high reliability
High-speed switching
Wide area of safe operation (ASO)
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
1500
1500
7
20
5
4
100
3
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
21.0±0.5
15.0±0.2
0.7
15.0±0.3
11.0±0.2
5.0±0.2
3.2
φ3.2±0.1
Solder Dip
q
q
q
16.2±0.5
3.2 2.3
q
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(b)
Internal Connection
C
B
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time (L-load)
Fall time (L-load)
Diode forward voltage
(T
C
=25˚C)
Symbol
I
CBO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
I
E
= 500mA, I
C
= 0
V
CE
= 10V, I
C
= 5A
I
C
= 5A, I
B
= 1.2A
I
C
= 5A, I
B
= 1.2A
V
CE
= 10V, I
C
= 1A, f = 0.5MHz
I
C
= 5A, I
B1
= 1.2A, I
B2
= –1.2A,
L
leak
= 5µH
I
C
= –6A, I
B
= 0
2
12
0.8
–2.3
7
4.5
15
8
1.5
V
V
MHz
µs
µs
V
min
typ
max
30
300
Unit
µA
µA
V
1
Power Transistors
P
C
— Ta
120
10
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
(1)
T
C
=25˚C
I
B
=1.6A
1.4A
1.2A
1A
0.8A
0.6A
4
0.4A
2SD2057
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
3
V
CE(sat)
— I
C
I
C
/I
B
=2
Collector power dissipation P
C
(W)
100
80
Collector current I
C
(A)
8
1
6
0.3
T
C
=–25˚C
100˚C
60
0.1
25˚C
40
0.2A
2
20
0.03
(2)
(3)
0
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
12
0
0.01
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
1000
h
FE
— I
C
I
C
/I
B
=2
V
CE
=10V
Area of safe operation (ASO)
30
10
I
CP
I
C
50ms
DC
10ms
1
0.3
0.1
0.03
0.01 Non repetitive pulse
T
C
=25˚C
t=1ms
Base to emitter saturation voltage V
BE(sat)
(V)
3
25˚C
1
T
C
=100˚C
–25˚C
0.3
Forward current transfer ratio h
FE
300
100
30
10
T
C
=100˚C
3
1
0.3
0.1
0.01 0.03
25˚C
–25˚C
Collector current I
C
(A)
0.1
0.3
1
3
10
3
0.1
0.03
0.01
0.1
0.3
1
3
10
1
3
10
30
100
300
1000
Collector current I
C
(A)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
Area of safe operation, horizontal operation ASO
24
I
CP
f=15.75kHz, T
C
=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
10000
R
th(t)
— t
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V
×
0.3A (3W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
20
16
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
1000
100
(1)
10
(2)
12
8
4
<1mA
0
0
400
800
1200
1600
2000
1
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
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