Ordering number : ENN3031A
2SB1133 / 2SD1666
PNP / NPN Triple Diffused Planar Silicon Transistors
2SB1133 / 2SD1666
Low-Frequency
General-Purpose Amplifier Applications
Features
•
•
•
Package Dimensions
unit : mm
2041A
[2SB1133 / 2SD1666]
10.0
3.2
3.5
7.2
Wide ASO(Adoption of MBIT process).
Micaless package facilitating easy mounting.
High reliability.
4.5
2.8
18.1
16.0
5.6
14.0
1.6
1.2
0.75
2.4
0.7
( ) : 2SB1133
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
2.55
2.55
2.4
Specifications
2.55
1 2 3
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Ratings
(
−
)60
(
−
)60
(
−
)6
(
−
)3
(
−
)8
2
25
150
−40
to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
a t Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
Conditions
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
VCE=(--)5V, IC=(--)0.5A
VCE=(--)5V, IC=(--)3A
min
Ratings
typ
max
(-
-)100
(-
-)100
*280
Unit
µA
µA
*70
20
Continued on next page.
* : The 2SB1133 / 2SD1666 are classified by 0.5A hFE as follows :
Rank
Q
R
S
70 to 140 100 to 200 140 to 280
hFE
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72501 GI IM No.3031-1/4
2SB1133 / 2SD1666
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
fT
Cob
VCE(sat)
VBE
V(BR)CBO
V(BR)CEO
V(BR)EBO
Conditions
VCE=(--)5V, IC=(-
-)0.5A
VCB=(--)10V, f=1MHz
IC=(--)2A, IB=(--)0.2A
VCE=(--)5V, IC=(-
-)0.5A
IC=(--)1mA, IE=0
IC=(--)5mA, RBE=∞
IE=(-
-)1mA, IC=0
min
Ratings
typ
(40)8
(110)60
(--)0.6
(--)0.7
max
Unit
MHz
pF
V
V
V
V
V
(--)1
(--)1
(--)60
(--)60
(--)6
--50
--4
mA
5m
A
--3.0
IC -- VCE
--40m
A
--35mA
--30mA
--25mA
3.0
IC -- VCE
50m
A
45m
A
40mA
--2.5
2.5
35mA
30mA
Collector Current, IC -- A
--2.0
--20mA
--15mA
Collector Current, IC -- A
25mA
2.0
20mA
15mA
--1.5
1.5
--10mA
--1.0
10mA
1.0
--5mA
--0.5
5mA
0.5
0
0
--1
--2
--3
IB=0
--4
--5
--6
IT03736
0
0
1.0
2.0
3.0
4.0
IB=0
5.0
6.0
IT03737
Collector to Emitter Voltage, VCE -- V
--3.6
--3.2
IC -- VBE(on)
Collector to Emitter Voltage, VCE -- V
3.6
IC -- VBE(on)
2SB1133
VCE= --5V
Collector Current, IC -- A
3.2
2.8
2.6
2.0
1.6
2SD1666
VCE=5V
Collector Current, IC -- A
--2.8
--2.6
--2.0
--1.6
Ta=1
20
°
C
0
°
C
25
°
C
Ta=1
2
--40
°
C
--1.2
--0.8
--0.4
0
0
--0.2
--0.4
1.2
0.8
0.4
0
--0.6
--0.8
--1.0
--1.2
--1.4
IT03738
5
0
0.2
0.4
0.6
0.8
--40
°
C
1.0
25
°
C
1.2
1.4
IT03739
Base to Emitter On Voltage, VBE(on) -- V
5
hFE -- IC
Base to Emitter On Voltage, VBE(on) -- V
hFE -- IC
Ta=120
°C
3
2SB1133
VCE= --5V
3
Ta=120
°C
2SD1666
VCE=5V
DC Current Gain, hFE
2
25
°C
DC Current Gain, hFE
2
25
°
C
--40
°C
100
7
5
100
--40
°
C
5
3
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
3
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC -- A
IT03740
Collector Current, IC -- A
IT03741
No.3031-2/4
2SB1133 / 2SD1666
2
VCE(sat) -- IC
2SB1133
IC/IB=10
Collector to Emitter
Saturation Voltage, VCE(sat) -- V
2
VCE(sat) -- IC
2SD1666
IC/IB=10
--1.0
1.0
Collector to Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
5
3
2
--0.1
0.1
5
3
2
7 --0.01
2
1
Ta=
20
°
C
5
3
2
5
0.01
2
°
C
--40
25
°
C
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
°
C
120
Ta=
°
C
--40
25
°
C
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC -- A
2
IT03742
2
VBE(sat) -- IC
Collector Current, IC -- A
IT03743
VBE(sat) -- IC
2SB1133
IC/IB=10
Base to Emitter
Saturation Voltage, VBE(sat) -- V
Base to Emitter
Saturation Voltage, VBE(sat) -- V
2SD1666
IC/IB=10
1.0
--1.0
Ta= --40
°C
7
Ta= --40
°
C
25
°
C
C
120
°
7
25
°
C
120
°
C
5
5
3
3
5
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
2
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC -- A
100
IT03744
3
fT -- IC
Collector Current, IC -- A
IT03745
fT -- IC
Gain-Bandwidth Product, f T -- MHz
7
Gain-Bandwidth Product, f T -- MHz
2SB1133
VCE= --5V
2
2SD1666
VCE=5V
5
10
7
5
3
2
3
2
10
5
--0.01 2
3
5
--0.1
2
3
5
--1.0
2
3
Collector Current, IC -- A
10
7
5
--10
IT03746
28
5
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
ASO
Collector Current, IC -- A
IT03747
PC -- Tc
ICP
IC max
100µs>
50
2SB1133/2SD1666
Collector Dissipation, PC -- W
25
24
Collector Current, IC -- A
10
10
0m
m
s
s
0
µ
s
1m
s
3
2
DC
20
Op
era
t
1.0
7
5
3
2
0.1
2
ion
16
P
C =2
5W
12
8
4
2SB1133/2SD1666
(For PNP minus sign is omitted)
3
5
7
--10
2
3
5
0
--100
IT03748
7
0
20
40
60
80
100
120
140
160
Collector to Emitter Voltage, VCE -- V
Case Temperature, Tc --
°C
IT03749
No.3031-3/4
2SB1133 / 2SD1666
4
PC -- Ta
2SB1133/2SD1666
Collector Dissipation, PC -- W
3
2
No
1
hea
t si
nk
0
0
20
40
60
80
100
120
140
160
Amibient Tamperature, Ta --
°C
IT03765
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2001. Specifications and information herein are subject
to change without notice.
PS No.3031-4/4
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