Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
FEATURES
•
Wide operating voltage from 2.0 to 6.0 V
•
Symmetrical output impedance
•
High noise immunity
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5 pins package
•
Output capability: bus driver.
74HC1G126; 74HCT1G126
DESCRIPTION
The 74HC1G/HCT1G126 is a highspeed Si-gate CMOS
device.
The 74HC1G/HCT1G126 provides one non-inverting
buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input pin (OE). A LOW at
pin OE causes the output as assume a high-impedance
OFF-state.
The bus driver output currents are equal compared to the
74HC/HCT126.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= r
f
≤
6.0 ns.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. For HC1G the conditions is V
I
= GND to V
CC
.
For HCT1G the conditions is V
I
= GND to V
CC
−
1.5 V.
FUNCTION TABLE
See note 1.
INPUTS
OE
H
H
L
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
A
L
H
X
OUTPUT
Y
L
H
Z
PARAMETER
propagation delay A to Y
input capacitance
power dissipation capacitance
notes 1 and 2
CONDITIONS
HC1G
C
L
= 15 pF; V
CC
= 5 V
9
1.5
30
HCT1G
10
1.5
27
ns
pF
pF
UNIT
2002 May 15
2
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
RECOMMENDED OPERATING CONDITIONS
74HC1G126; 74HCT1G126
74HC1G
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall times
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per
device
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
−
−
−
TYP.
5.0
−
−
+25
MAX.
6.0
V
CC
V
CC
+125
MIN.
4.5
0
0
−40
74HCT1G
UNIT
TYP.
5.0
−
−
+25
MAX.
5.5
V
CC
V
CC
+125
V
V
V
°C
t
r
, t
f
−
−
−
1000
500
400
−
−
−
−
−
−
−
500
−
ns
ns
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V);
notes 1 and 2.
SYMBOL
V
CC
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and
functional operation of the device at these or any other conditions beyond those under ‘recommended operating
conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device
reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
3. Above 55
°C
the value of P
D
derates linearly with 2.5 mW/K.
PARAMETER
supply voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
for temperature range from
−40
to +125
°C;
note 3
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−
−
−
−
−65
−
MAX.
+7.0
±20
±20
±35.0
±70
+150
200
UNIT
V
mA
mA
mA
mA
°C
mW
2002 May 15
4
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
DC CHARACTERISTICS
74HC1G126; 74HCT1G126
Family 74HC1G
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
V
IH
HIGH-level input voltage
V
CC
(V)
2.0
4.5
6.0
V
IL
LOW-level input voltage
2.0
4.5
6.0
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
=
−20 µA
V
I
= V
IH
or V
IL
;
I
O
=
−20 µA
V
I
= V
IH
or V
IL
;
I
O
=
−20 µA
V
I
= V
IH
or V
IL
;
I
O
=
−6.0
mA
V
I
= V
IH
or V
IL
;
I
O
=
−7.8
mA
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
;
I
O
= 20
µA
V
I
= V
IH
or V
IL
;
I
O
= 20
µA
V
I
= V
IH
or V
IL
;
I
O
= 20
µA
V
I
= V
IH
or V
IL
;
I
O
= 6.0 mA
V
I
= V
IH
or V
IL
;
I
O
= 7.8 mA
I
LI
I
OZ
I
CC
Note
1. All typical values are measured at T
amb
= 25
°C.
input leakage current
3-state output current
OFF-state
quiescent supply current
V
I
= V
CC
or GND
V
I
= V
IH
or V
IL
;
V
O
= V
CC
or GND
V
I
= V
CC
or GND;
I
O
= 0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
6.0
T
amb
(°C)
−40
to +85
MIN.
1.5
3.15
4.2
−
−
−
1.9
4.4
5.9
3.84
5.34
−
−
−
−
−
−
−
−
TYP.
(1)
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
−
−
−
MAX.
−
−
−
0.5
1.35
1.8
−
−
−
−
−
0.1
0.1
0.1
0.33
0.33
1.0
5
10
−40
to +125
MIN.
1.5
3.15
4.2
−
−
−
1.9
4.4
5.9
3.7
5.2
−
−
−
−
−
−
−
−
MAX.
−
−
−
0.5
1.35
1.8
−
−
−
−
−
0.1
0.1
0.1
0.4
0.4
1.0
10
20
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
UNIT
2002 May 15
5
NXP MCU
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