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IS62WV5128CLL-55B2I

产品描述Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36
产品类别存储    存储   
文件大小76KB,共11页
制造商Integrated Silicon Solution ( ISSI )
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IS62WV5128CLL-55B2I概述

Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36

IS62WV5128CLL-55B2I规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码BGA
包装说明6 X 8 MM, MINI, BGA-36
针数36
Reach Compliance Codeunknown
ECCN代码3A991.B.2.A
最长访问时间55 ns
JESD-30 代码R-PBGA-B36
JESD-609代码e0
长度8 mm
内存密度4194304 bit
内存集成电路类型STANDARD SRAM
内存宽度8
功能数量1
端子数量36
字数524288 words
字数代码512000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织512KX8
封装主体材料PLASTIC/EPOXY
封装代码LFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度1.35 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.5 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距0.75 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度6 mm
Base Number Matches1

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IS62WV5128CLL
512K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 55ns, 70ns
• CMOS low power operation
– 1.5 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 2.5V--3.6V V
DD
(62WV5128CLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
• 2 CS Options Available
ISSI
MARCH 2003
®
DESCRIPTION
The
ISSI
IS62WV5128CLL are high-speed, 4M bit static
RAMs organized as 512K words by 8 bits. It is fabricated
using
ISSI
's high-performance CMOS technology. This
highly reliable process coupled with innovative circuit
design techniques, yields high-performance and low power
consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) the device assumes a standby mode at
which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory.
The IS62WV5128CLL is packaged in the JEDEC standard
36-pin mini BGA (6mm x 8mm). 36-pin mini BGA is
available in both 1CS and 2CS options.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 8
MEMORY ARRAY
V
DD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CS2
CS1
OE
WE
CONTROL
CIRCUIT
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
03/13/03
1

IS62WV5128CLL-55B2I相似产品对比

IS62WV5128CLL-55B2I IS62WV5128CLL-55B2 IS62WV5128CLL-70B2I IS62WV5128CLL-70BI IS62WV5128CLL-55B IS62WV5128CLL-55BI
描述 Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36 Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36 Standard SRAM, 512KX8, 70ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36 Standard SRAM, 512KX8, 70ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36 Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36 Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
零件包装代码 BGA BGA BGA BGA BGA BGA
包装说明 6 X 8 MM, MINI, BGA-36 6 X 8 MM, MINI, BGA-36 6 X 8 MM, MINI, BGA-36 6 X 8 MM, MINI, BGA-36 6 X 8 MM, MINI, BGA-36 6 X 8 MM, MINI, BGA-36
针数 36 36 36 36 36 36
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 55 ns 55 ns 70 ns 70 ns 55 ns 55 ns
JESD-30 代码 R-PBGA-B36 R-PBGA-B36 R-PBGA-B36 R-PBGA-B36 R-PBGA-B36 R-PBGA-B36
JESD-609代码 e0 e0 e0 e0 e0 e0
长度 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm
内存密度 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8 8 8
功能数量 1 1 1 1 1 1
端子数量 36 36 36 36 36 36
字数 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
字数代码 512000 512000 512000 512000 512000 512000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 85 °C 70 °C 85 °C
最低工作温度 -40 °C - -40 °C -40 °C - -40 °C
组织 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFBGA LFBGA LFBGA LFBGA LFBGA LFBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.35 mm 1.35 mm 1.35 mm 1.35 mm 1.35 mm 1.35 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
标称供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 BALL BALL BALL BALL BALL BALL
端子节距 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm 0.75 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 6 mm 6 mm 6 mm 6 mm 6 mm 6 mm
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