Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
| 参数名称 | 属性值 |
| 厂商名称 | Fairchild |
| 零件包装代码 | SOT |
| 包装说明 | SMALL OUTLINE, R-PDSO-G8 |
| 针数 | 8 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V |
| 最大漏极电流 (ID) | 5.5 A |
| 最大漏源导通电阻 | 0.03 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G8 |
| 元件数量 | 2 |
| 端子数量 | 8 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 20 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| FDS8926AD84Z | FDS8926AL99Z | FDS8926AL86Z | FDS8926AS62Z | |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 |
| 零件包装代码 | SOT | SOT | SOT | SOT |
| 包装说明 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 |
| 针数 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 30 V | 30 V | 30 V |
| 最大漏极电流 (ID) | 5.5 A | 5.5 A | 5.5 A | 5.5 A |
| 最大漏源导通电阻 | 0.03 Ω | 0.03 Ω | 0.03 Ω | 0.03 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
| 元件数量 | 2 | 2 | 2 | 2 |
| 端子数量 | 8 | 8 | 8 | 8 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 20 A | 20 A | 20 A | 20 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Fairchild | - | Fairchild | Fairchild |
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