DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK660
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK660 is suitable for converter of ECM.
FEATURES
•
Compact package
•
High forward transfer admittance
| y
fs
| = 1200
µ
S TYP. (V
DS
= 5 V, I
D
= 0
µ
A)
•
Low capacitance
C
iss
= 4.5 pF (V
DS
= 5 V, V
GS
= 0 V, f = 1 MHz)
•
Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
2SK660
PACKAGE
SST
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note
V
GS
= –1.0 V
Remark
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
Note
V
DSX
V
GDO
I
D
I
G
P
T
T
j
T
stg
20
–20
10
10
100
125
–55 to +125
V
V
mA
mA
mW
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Source
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10753EJ2V0DS00 (2nd edition)
Date Published January 2002 NS CP(K)
Printed in Japan
©
2002
2SK660
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
Forward Transfer Admittance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Noise Voltage
SYMBOL
I
DSS
V
GS(off)
| y
fs1
|
| y
fs2
|
C
iss
C
oss
C
rss
NV
TEST CONDITIONS
V
DS
= 5.0 V, V
GS
= 0 V
V
DS
= 5.0 V, I
D
= 1.0
µ
A
V
DS
= 5.0 V, I
D
= 30
µ
A, f = 1.0 kHz
V
DS
= 5.0 V, V
GS
= 0 V, f = 1.0 kHz
V
DS
= 5.0 V
V
GS
= 0 V
f = 1.0 MHz
See Test Circuit
150
150
1200
4.5
1.5
1.2
1.0
6.0
3.0
3.0
3.0
MIN.
60
TYP.
MAX.
500
−1.0
UNIT
µ
A
V
µ
S
µ
S
pF
pF
pF
µ
V
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
JIS A
NV (r.m.s)
R = 1 kΩ
C = 10 pF
2
Data Sheet D10753EJ2V0DS
2SK660
TYPICAL CHARACTERISTICS (T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
500
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.15 V
P
T
- Total Power Dissipation - mW
100
80
60
40
20
0
I
D
- Drain Current -
µ
A
400
0.10 V
0.05 V
V
GS
= 0 V
300
200
−0.05
V
−0.10
V
−0.15
V
−0.20
V
0
2
4
6
−0.25
V
−0.30
V
8
10
100
0
0
30
60
90
120
150
180
T
A
- Ambient Temperature - ˚C
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
30
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1.0
V
DS
= 5 V
IG - Gate Current -
µ
A
10
−1.0 −0.8 −0.6 −0.4 −0.2
−10
−20
−30
−40
0
0.2 0.4 0.6 0.8 1.0
I
D
- Drain Current - mA
20
0.8
0.6
0.4
0.2
−0.4
−0.2
0
0.2
0.4
V
GS
- Gate to Source Voltage - V
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
GATE TO SOURCE VOLTAGE
| y
fs
| - Forward Transfer Admittance - mS
INPUT AND FEEDBACK CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
C
iSS
, C
OSS
- Capacitance - pF
3.0
V
DS
= 5 V
2.5
2.0
1.5
1.0
0.5
0
−0.4 −0.3 −0.2 −0.1
8
V
DS
= 0 V
f = 1.0 kHz
5
C
ISS
3
2
C
OSS
0
0.1
0.2
0.3
0.4
1
1
2
5
10
20
50
100
V
GS
- Gate to Source Voltage -
V
V
DS
- Drain to Source Voltage - V
Data Sheet D10753EJ2V0DS
3
2SK660
V
GS (off)
- Gate to Source Cut-off Voltage - V
| y
fs
| - Forward Transfer Admittance - mS
FORWARD TRANSFER ADMITTANCE AND
GATE TO SOURCE CUT-OFF VOLTAGE vs. ZERO-
GATE VOLTAGE DRAIN CURRENT CO-RELATION
10.0
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
20
50
100
200
500
1000
Zero-Gate Voltage Drain Current -
µ
A
V
GS (off)
| y
fs
|
V
DS
= 5 V
4
Data Sheet D10753EJ2V0DS
2SK660
PACKAGE DRAWING (Unit: mm)
4.0±0.2
2.0±0.2
0.50 TYP.
0.6 TYP.
0.45 TYP.
1.0
TYP.
0.42 TYP.
12.5 MIN.
D
1.27 TYP.
G
S
1.27 TYP.
1.35
TYP.
3.0±0.2
Data Sheet D10753EJ2V0DS
5
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