SMART
®
SM5640430UUNWGU
December 22, 1998
Modular Technologies
Revision History
• December 22, 1998
Changed physical dimensions from inches to mm (page 11).
• June 13, 1997
Datasheet released.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
8 Paterson Hill, Suite 18-08, Singapore • Tel: + 65-838-0177 • Fax: + 65-838-0178
1
SMART
Features
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®
SM5640430UUNWGU
December 22, 1998
Modular Technologies
32MByte (4M x 64) DRAM Module - 4Mx16 based
144-pin SODIMM, Non-buffered
Part Numbers
SM56404301UNWGU
SM56404309UNWGU
Standard
:
JEDEC
Configuration
:
Non-parity
Access Time
:
50/60/70ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3V
Refresh
:
4K/8K
Device Physicals
:
400mil TSOP
Lead Finish
:
Gold
Length x Height
:
67.60mm x 25.40mm
No. of sides
:
Double-sided
Mating Connector (Examples)
Horizontal
:
AMP-316310-1 (3.3V, Gold)
:
:
FPM, 3.3V
EDO, 3.3V
Note: Refer last page for all "U” options.
Functional Diagram
CAS3#
CAS2#
CAS1#
CAS0#
RAS0#
WE0#
OE0#
4Mx16
DRAM
4Mx16
DRAM
4Mx16
DRAM
4Mx16
DRAM
CAS4#
CAS5#
CAS6#
CAS7#
DQ0~DQ15
DQ16~DQ31
DQ32~DQ47
DQ48~DQ63
DQ0~DQ63
SCL
Notes : 1. A0~A11/A12 are connected to all DRAMs (A12 is NC
for 4K refresh module).
2. A0~A2 of the Serial PD EEPROM device are grounded.
3. Refer to note on page 3 for details on CAS# control
scheme.
SCL
SDA
SDA
V
CC
V
SS
SERIAL PD
EEPROM
Decoupling capacitors
to all devices.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
8 Paterson Hill, Suite 18-08, Singapore • Tel: + 65-838-0177 • Fax: + 65-838-0178
2
SMART
Pin Name
A0~A11
A0~A9
A0~A12
A0~A8
DQ0~DQ63
RAS0#
CAS0#~CAS7#
®
SM5640430UUNWGU
December 22, 1998
Modular Technologies
Row Addresses for 4K Refresh Module
Column Addresses for 4K Refresh Module
Row Addresses for 8K Refresh Module
Column Addresses for 8K Refresh Module
Data Inputs/Outputs
Row Address Strobe Input
Column Address Strobe Inputs
WE#
OE#
SCL
SDA
V
CC
V
SS
NC
Write Enable Input
Output Enable Input
Serial PD Clock
Serial PD Data Input/Output
Power Supply
Ground
No Connection
Note:
CAS# v/s Data I/Os
CAS0#
CAS1#
CAS2#
CAS3#
CAS4#
CAS5#
CAS6#
CAS7#
controls
controls
controls
controls
controls
controls
controls
controls
DQ0~DQ7
DQ8~DQ15
DQ16~DQ23
DQ24~DQ31
DQ32~DQ39
DQ40~DQ47
DQ48~DQ55
DQ56~DQ63
Pin
No.
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
Pin
Designation
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
V
SS
CAS0#
CAS1#
V
CC
A0
A1
A2
V
SS
DQ8
DQ9
DQ10
DQ11
V
CC
DQ12
DQ13
DQ14
DQ15
V
SS
NC
NC
NC
V
CC
NC
WE#
RAS0#
NC
Pin
No.
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
Pin
Designation
V
SS
DQ32
DQ33
DQ34
DQ35
V
CC
DQ36
DQ37
DQ38
DQ39
V
SS
CAS4#
CAS5#
V
CC
A3
A4
A5
V
SS
DQ40
DQ41
DQ42
DQ43
V
CC
DQ44
DQ45
DQ46
DQ47
V
SS
NC
NC
NC
V
CC
NC
NC
NC
NC
Pin
No.
73
75
77
79
81
83
85
87
89
91
93
95
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
Pin
Designation
OE#
V
SS
NC
NC
V
CC
DQ16
DQ17
DQ18
DQ19
V
SS
DQ20
DQ21
DQ22
DQ23
V
CC
A6
A8
V
SS
A9
A10
V
CC
CAS2#
CAS3#
V
SS
DQ24
DQ25
DQ26
DQ27
V
CC
DQ28
DQ29
DQ30
DQ31
V
SS
SDA
V
CC
Pin
No.
74
76
78
80
82
84
86
88
90
92
94
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
Pin
Designation
NC
V
SS
NC
NC
V
CC
DQ48
DQ49
DQ50
DQ51
V
SS
DQ52
DQ53
DQ54
DQ55
V
CC
A7
A11
V
SS
A12 (Note)
NC
V
CC
CAS6#
CAS7#
V
SS
DQ56
DQ57
DQ58
DQ59
V
CC
DQ60
DQ61
DQ62
DQ63
V
SS
SCL
V
CC
Note : A12 is NC for 4K refresh module.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
8 Paterson Hill, Suite 18-08, Singapore • Tel: + 65-838-0177 • Fax: + 65-838-0178
3
SMART
FPM & EDO-based Modules
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
®
SM5640430UUNWGU
December 22, 1998
Modular Technologies
DC Characteristics
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
- 0.5 to +4.6
4
0 to +70
- 55 to +150
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Capacitance
(V
CC
= 3.3V
±
10%, T
A
= +25
°
C)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS#, WE#, OE# )
Input Capacitance (CAS#)
Input/Output Capacitance (DQ0~DQ63)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I3
C
I/O
Max
30
38
17
17
Unit
pF
pF
pF
pF
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
0.8
Unit
V
V
V
V
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
8 Paterson Hill, Suite 18-08, Singapore • Tel: + 65-838-0177 • Fax: + 65-838-0178
4
SMART
®
SM5640430UUNWGU
December 22, 1998
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
50ns
60ns
70ns
Min Max Min Max Min Max
-40
40
-40
40
-40
40
-10
10
-10
10
-10
10
Unit
µ
A
µ
A
FPM-based Modules
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=VIH; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=VIL, CAS#, Address
cycling @ t
PC
=min.
Refresh
4K
8K
50ns
600
360
8
Max.
60ns
560
320
8
Unit
70ns
520
280
8
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
4
4K
8K
4K
8K
4K
8K
600
360
600
360
400
360
4
560
320
560
320
360
320
4
520
280
520
280
320
280
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1, 3
1, 3
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
8 Paterson Hill, Suite 18-08, Singapore • Tel: + 65-838-0177 • Fax: + 65-838-0178
5
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