2SJ280
L
, 2SJ280
S
Silicon P Channel MOS FET
Application
LDPAK
High speed power switching
4
4
Features
Low on–resistance
High speed switching
Low drive current
4 V gate drive device can be driven from
5 V source
• Suitable for Switching regulator, DC – DC
converter
• Avalanche Ratings
•
•
•
•
1
1
2, 4
2
3
2
3
1
1. Gate
2. Drain
3. Source
4. Drain
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
I
AP
***
E
AR
***
Pch**
Tch
Tstg
Ratings
–60
±20
–30
–120
–30
–30
77
75
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
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*
PW
≤
10 µs, duty cycle
≤
1 %
**
Value at Tc = 25 °C
***
Value at Tch = 25 °C, Rg
≥
50
Ω
2SJ280 L , 2SJ280 S
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
Min
–60
Typ
—
Max
—
Unit
V
Test conditions
I
D
= –10 mA, V
GS
= 0
I
G
= ±200 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, VDS = –10 V
———————————————————————————————————————————
———————————————————————————————————————————
±20
—
—
V
———————————————————————————————————————————
—
—
–1.0
—
—
—
—
0.033
±10
–250
–2.25
0.043
µA
µA
V
Ω
Ω
———————————————————————————————————————————
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I
D
= –15 A
V
GS
= –10 V *
I
D
= –15 A
V
GS
= –4 V *
I
D
= –15 A
V
DS
= –10 V *
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= –15 A
V
GS
= –10 V
R
L
= 2
Ω
————————————————————————
—
0.045
0.06
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
17
25
—
S
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
* Pulse Test
—
—
—
—
—
—
—
—
3300
1500
480
30
170
500
390
–1.5
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
I
F
= –30 A, V
GS
= 0
IF = –30 A, V
GS
= 0,
diF / dt = 50 A / µs
————————————————————————————————
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—
200
—
ns
———————————————————————————————————————————
2SJ280 L , 2SJ280 S
Power vs. Temperature Derating
75
Channel Dissipation Pch (W)
Drain Current I
D
(A)
Maximum Safe Operation Area
–500
–300
10
µ
s
ar
50
O
is pe
lim ra
ite tion
d in
by t
R his
D
S(
on
)
–100
–30
–10
–3
ea
0
10
µ
s
1
DC
s
m
10
s
m
n
PW
atio
r
pe
O
=
c
(T
25
0
50
100
150
Case Temperature Tc (°C)
Ta = 25°C
–1
–0.5
–0.1 –0.3
–1
–3 –10 –30 –100
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–50
–40
Drain Current I
D
(A)
–30
–20
–10
V
GS
= –2 V
0
0
–2
–4
–6
–8
–10
Drain to Source Voltage V
DS
(V)
0
–10 V
–6 V
–4 V
–3.5 V
–50
–40
D
(A)
Typical Transfer Characteristics
Tc = 25°C
–25°C
75°C
=
)
°C
25
–3 V
Drain Current I
Pulse Test
–30 V = –10 V
GS
–20
–10
–2.5 V
–1
–2
–3
–4
–5
Gate to Source Voltage V
GS
(V)
2SJ280 L , 2SJ280 S
Drain-Source Saturation Voltage
vs. Gate-Source Voltage
–2.0
Drain to Source Saturation Voltage
V
DS (on)
(V)
–1.6
–1.2
–0.8
–0.4
Pulse Test
Static Drain-Source on State
Resistance R
DS(on)
(
Ω
)
0.5
0.2
0.1
Static Drain-Source on State
Resistance vs. Drain Current
I
D
= –30 A
–20 A
–10 A
0.05
0.02
0.01
V
GS
= –4 V
–10 V
0
–2
–4
–6
–8
–10
Gate to Source Voltage V
GS
(V)
0.005
–2
–5 –10 –20
–50 –100 –200
Drain Current I
D
(A)
Static Drain-Source on State
Resistance vs. Temperature
0.1
Static Drain-Source on State
Resistance R
DS(on)
(
Ω
)
0.08
0.06
0.04
0.02
0
–40
–10 V
I
D
= –30 A
–10 A, –20 A
Pulse test
I
D
= –30 A
V
GS
= –4 V
–10 A, –20 A
Forward Transfer Admittance
vs. Drain Current
100
Forward Transfer Admittance
|y
fs
| (s)
50
20
10
5
2
–2
–5 –10 –20
Drain Current I
D
(A)
–50
Pulse Test
V
DS
= –10 V
Tc = 25°C
–25°C
75°C
0
40
80
120
160
Case Temperature T
C
(°C)
1
–0.5 –1
2SJ280 L , 2SJ280 S
Body-Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t rr (ns)
200
C (pF)
100
50
20
10
5
–1
di/dt = 50 A/
µ
s, V
GS
= 0
Ta = 25°C
10000
Typical Capacitance
vs. Drain-Source Voltage
Ciss
1000
Coss
Crss
100
V
GS
= 0,
f = 1 MHz
Capacitance
–2
–5 –10 –20
–50 –100
Reverse Drain Current I
DR
(A)
10
0
–10
–20
–30
Drain to Source Voltage
–40
–50
V
DS
(V)
Dynamic Input Characteristics
0
Drain to Source Voltage V
DS
(V)
–20
–40
–60
–80
Gate to Source Voltage V
GS
(V)
V
DD
= –10 V
–25 V
–50 V
V
DS
V
DD
= –10 V
–25 V
–50 V
Switching Characteristics
0
–4
–8
–12
1000
t
d
(off)
Switching Time t (ns)
500
200
100
50
20
10
–0.5 –1
t
f
t
r
I
D
= –30 A
V
GS
–16
–20
200
t
d
(on)
V
GS
= –10 V, V
DD
=
–30 V
:
PW = 2
µ
s, duty
<
1%
=
–100
0
40
80
120
160
Gate Charge Qg (nc)
–2
–5 –10 –20
Drain Current I
D
(A)
–50
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