PTVSxS1UR series
400 W Transient Voltage Suppressor
Rev. 3 — 10 January 2011
Product data sheet
1. Product profile
1.1 General description
400 W unidirectional Transient Voltage Suppressor (TVS) in a SOD123W small and flat
lead low-profile Surface-Mounted Device (SMD) plastic package, designed for transient
overvoltage protection.
1.2 Features and benefits
Rated peak pulse power:
P
PPM
= 400 W (350 W for 3V3)
Reverse standoff voltage range:
V
RWM
= 3.3 V to 64 V
Reverse current: I
RM
= 0.001
μA
Small plastic package suitable for
surface-mounted design
Very low package height: 1 mm
AEC-Q101 qualified
1.3 Applications
Power supply protection
Automotive application
Industrial application
Power management
1.4 Quick reference data
Table 1.
Symbol
P
PPM
V
RWM
[1]
[2]
Quick reference data
Parameter
rated peak pulse power
reverse standoff voltage
Conditions
[1][2]
Min
-
3.3
Typ
-
-
Max
400
64
Unit
W
V
In accordance with IEC 61643-321 (10/1000
μs
current waveform).
For PTVS3V3S1UR: P
PPM
= 350 W
NXP Semiconductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aaa152
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PTVSxS1UR series
[1]
Type number
[1]
Description
plastic surface-mounted package; 2 leads
Version
SOD123W
-
The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V.
4. Marking
Table 4.
Marking codes
Marking code
A1
A2
A3
A4
A5
A6
A7
A8
A9
AA
AB
AC
AD
AE
AF
AG
AH
AK
Type number
PTVS20VS1UR
PTVS22VS1UR
PTVS24VS1UR
PTVS26VS1UR
PTVS28VS1UR
PTVS30VS1UR
PTVS33VS1UR
PTVS36VS1UR
PTVS40VS1UR
PTVS43VS1UR
PTVS45VS1UR
PTVS48VS1UR
PTVS51VS1UR
PTVS54VS1UR
PTVS58VS1UR
PTVS60VS1UR
PTVS64VS1UR
-
Marking code
AL
AM
AN
AP
AR
AS
AT
AU
AV
AW
AX
AY
AZ
B1
B2
B3
B4
-
Type number
PTVS3V3S1UR
PTVS5V0S1UR
PTVS6V0S1UR
PTVS6V5S1UR
PTVS7V0S1UR
PTVS7V5S1UR
PTVS8V0S1UR
PTVS8V5S1UR
PTVS9V0S1UR
PTVS10VS1UR
PTVS11VS1UR
PTVS12VS1UR
PTVS13VS1UR
PTVS14VS1UR
PTVS15VS1UR
PTVS16VS1UR
PTVS17VS1UR
PTVS18VS1UR
PTVSxS1UR_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 10 January 2011
2 of 12
NXP Semiconductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
I
PPM
Parameter
rated peak pulse power
rated peak pulse current
Conditions
[1][2]
[1]
Min
-
-
Max
400
see
Table 9
and
10
50
150
+150
+150
Unit
W
I
FSM
T
j
T
amb
T
stg
[1]
[2]
Non-repetitive peak
forward current
junction temperature
ambient temperature
storage temperature
single half-sine
wave; t
p
= 8.3 ms
-
-
−55
−65
A
°C
°C
°C
In accordance with IEC 61643-321 (10/1000
μs
current waveform).
For PTVS3V3S1UR: P
PPM
= 350 W
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
[1]
[2]
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
[1][2]
Min
-
Max
30
Unit
kV
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
Soldering point of cathode tab.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PTVSxS1UR_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 10 January 2011
3 of 12
NXP Semiconductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
6. Thermal characteristics
Table 8.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
-
-
-
-
Max
220
130
70
18
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
thermal resistance from
junction to solder point
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
7. Characteristics
Table 9.
Characteristics per type; PTVS3V3S1UR to PTVS7V0S1UR
T
j
= 25
°
C unless otherwise specified.
Type number
Reverse standoff
voltage
V
RWM
(V)
I
R
= 10 mA
Max
PTVS3V3S1UR
PTVS5V0S1UR
PTVS6V0S1UR
PTVS6V5S1UR
PTVS7V0S1UR
3.3
5.0
6.0
6.5
7.0
Min
5.20
6.40
6.67
7.22
7.78
Typ
5.60
6.70
7.02
7.60
8.20
Max
6.00
7.00
7.37
7.98
8.60
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
at V
RWM
(V)
Typ
5
5
5
5
3
Max
600
400
400
250
100
Max
8.0
9.2
10.3
11.2
12.0
I
PPM
(A)
43.8
43.5
38.8
35.7
33.3
Clamping voltage
V
CL
(V)
Table 10. Characteristics per type; PTVS7V5S1UR to PTVS64VS1UR
T
j
= 25
°
C unless otherwise specified.
Type number
Reverse standoff
voltage
V
RWM
(V)
I
R
= 1 mA
Max
PTVS7V5S1UR
PTVS8V0S1UR
PTVS8V5S1UR
PTVS9V0S1UR
PTVS10VS1UR
PTVS11VS1UR
PTVS12VS1UR
PTVS13VS1UR
PTVSxS1UR_SER
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
at V
RWM
(V)
Clamping voltage
V
CL
(V)
Min
8.33
8.89
9.44
10.00
11.10
12.20
13.30
14.40
Typ
8.77
9.36
9.92
10.55
11.70
12.85
14.00
15.15
Max
9.21
9.83
10.40
11.10
12.30
13.50
14.70
15.90
Typ
0.2
0.03
0.01
0.005
0.005
0.005
0.005
0.001
Max
50
25
10
5
2.5
2.5
2.5
0.1
Max
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
I
PPM
(A)
31.0
29.4
27.8
26.0
23.5
22.0
20.1
18.6
7.5
8.0
8.5
9.0
10
11
12
13
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 10 January 2011
4 of 12
NXP Semiconductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
Table 10. Characteristics per type; PTVS7V5S1UR to PTVS64VS1UR
…continued
T
j
= 25
°
C unless otherwise specified.
Type number
Reverse standoff
voltage
V
RWM
(V)
I
R
= 1 mA
Max
PTVS14VS1UR
PTVS15VS1UR
PTVS16VS1UR
PTVS17VS1UR
PTVS18VS1UR
PTVS20VS1UR
PTVS22VS1UR
PTVS24VS1UR
PTVS26VS1UR
PTVS28VS1UR
PTVS30VS1UR
PTVS33VS1UR
PTVS36VS1UR
PTVS40VS1UR
PTVS43VS1UR
PTVS45VS1UR
PTVS48VS1UR
PTVS51VS1UR
PTVS54VS1UR
PTVS58VS1UR
PTVS60VS1UR
PTVS64VS1UR
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
Min
15.60
16.70
17.80
18.90
20.00
22.20
24.40
26.70
28.90
31.10
33.30
36.70
40.00
44.40
47.80
50.00
53.30
56.70
60.00
64.40
66.70
71.10
Typ
16.40
17.60
18.75
19.90
21.00
23.35
25.60
28.10
30.40
32.80
35.10
38.70
42.10
46.80
50.30
52.65
56.10
59.70
63.15
67.80
70.20
74.85
Max
17.20
18.50
19.70
20.90
22.10
24.50
26.90
29.50
31.90
34.40
36.80
40.60
44.20
49.10
52.80
55.30
58.90
62.70
66.30
71.20
73.70
78.60
Breakdown voltage
V
BR
(V)
Reverse leakage
current
I
RM
(μA)
at V
RWM
(V)
Typ
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
Max
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Max
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103.0
I
PPM
(A)
17.2
16.4
15.4
14.5
13.7
12.3
11.3
10.3
9.5
8.8
8.3
7.5
6.9
6.2
5.8
5.5
5.2
4.9
4.6
4.3
4.1
3.9
Clamping voltage
V
CL
(V)
PTVSxS1UR_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 10 January 2011
5 of 12
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
