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5962R9582101VQX

产品描述4 CHANNEL(S), 5MHz, DMA CONTROLLER, CDIP40
产品类别嵌入式处理器和控制器    微控制器和处理器   
文件大小267KB,共21页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 选型对比 全文预览 文档解析

5962R9582101VQX概述

4 CHANNEL(S), 5MHz, DMA CONTROLLER, CDIP40

5962R9582101VQX规格参数

参数名称属性值
包装说明,
Reach Compliance Codeunknown
ECCN代码3A001.A.1.A
地址总线宽度8
总线兼容性HS-80C86RH; HS-80C85RH
最大时钟频率5 MHz
外部数据总线宽度8
JESD-30 代码R-CDIP-T40
DMA 通道数量4
端子数量40
最高工作温度125 °C
最低工作温度-55 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式IN-LINE
认证状态Not Qualified
最大供电电压5.5 V
最小供电电压4.5 V
标称供电电压5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子形式THROUGH-HOLE
端子位置DUAL
总剂量100k Rad(Si) V
uPs/uCs/外围集成电路类型DMA CONTROLLER
Base Number Matches1

文档解析

这份数据手册中提到的低功耗设计是通过使用静态CMOS电路设计实现的。具体来说,该设计确保了低操作功率,并且允许通过门控时钟操作进一步降低功耗。这意味着,当不需要进行数据传输或其他操作时,可以通过停止时钟信号来减少芯片的能耗。此外,手册还提到了几种低功耗特性:

  1. 低静态功耗:在待机状态下(IDDSB),最大功耗仅为50µA。
  2. 低动态功耗:在操作状态下(IDDOP),最大功耗为4.0mA/MHz,这表明功耗与时钟频率成正比。
  3. 门控时钟操作:允许进一步减少功耗,通过在不需要时停止时钟信号。

这些特性使得HS-82C37ARH在辐射环境中具有高性能的同时,还能显著降低功耗。

文档预览

下载PDF文档
HS-82C37ARH
TM
Data Sheet
August 2000
File Number
3042.2
Radiation Hardened CMOS High
Performance Programmable DMA
Controller
The Intersil HS-82C37ARH is an enhanced, radiation
hardened CMOS version of the industry standard 8237A
Direct Memory Access (DMA) controller, fabricated using the
Intersil hardened field, self-aligned silicon gate CMOS
process. The HS-82C37ARH offers increased functionality,
improved performance, and dramatically reduced power
consumption for the radiation environment. The high speed,
radiation hardness, and industry standard configuration of
the HS-82C37ARH make it compatible with radiation
hardened microprocessors such as the HS-80C85RH and
the HS-80C86RH.
The HS-82C37ARH can improve system performance by
allowing external devices to transfer data directly to or from
system memory. Memory-to-memory transfer capability is
also provided, along with a memory block initialization
feature. DMA requests may be generated by either hardware
or software, and each channel is independently
programmable with a variety of features for flexible
operation.
Static CMOS circuit design insures low operating power and
allows gated clock operation for an even further reduction of
power. Multimode programmability allows the user to select
from three basic types of DMA services, and reconfiguration
under program control is possible even with the clock to the
controller stopped. Each channel has a full 64K address and
word count range, and may be programmed to autoinitialize
these registers following DMA termination (end of process).
The Intersil hardened field CMOS process results in
performance equal to or greater than existing radiation
resistant products at a fraction of the power.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95821. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Features
• Electrically Screened to SMD # 5962-95821
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Performance
- Total Dose. . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)
- Transient Upset . . . . . . . . . . . . . . . . . . . . .>10
8
rad(Si)/s
- Latch Up Free EPI-CMOS
• Low Power Consumption
- IDDSB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50µA (Max)
- IDDOP . . . . . . . . . . . . . . . . . . . . . . . 4.0mA/MHz (Max)
• Pin Compatible with NMOS 8237A and the Intersil
82C37A
• High Speed Data Transfers Up To 2.5MBPS With 5MHz
Clock
• Four Independent Maskable Channels with
Autoinitialization Capability
• Expandable to Any Number of Channels
• Memory-to-Memory Transfer Capability
• CMOS Compatible
• Hardened Field, Self-Aligned, Junction Isolated CMOS
Process
• Single 5V Supply
• Military Temperature Range . . . . . . . . . . . -55
o
C to 125
o
C
Ordering Information
ORDERING NUMBER
5962R9582101QQC
5962R9582101QXC
5962R9582101VQC
5962R9582101VXC
INTERNAL
MKT. NUMBER
HS1-82C37ARH-8
HS9-82C37ARH-8
HS1-82C37ARH-Q
HS9-82C37ARH-Q
TEMP. RANGE
(
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright © Intersil Corporation 2000

5962R9582101VQX相似产品对比

5962R9582101VQX 5962R9582101VXX 5962R9582101QXX 5962R9582101QQX
描述 4 CHANNEL(S), 5MHz, DMA CONTROLLER, CDIP40 4 CHANNEL(S), 5MHz, DMA CONTROLLER, CDFP42 4 CHANNEL(S), 5MHz, DMA CONTROLLER, CDFP42 4 CHANNEL(S), 5MHz, DMA CONTROLLER, CDIP40, METAL SEALED, SIDE BRAZED, CERAMIC, DIP-40
Reach Compliance Code unknown unknown unknown unknown
ECCN代码 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A 3A001.A.1.A
地址总线宽度 8 8 8 8
总线兼容性 HS-80C86RH; HS-80C85RH HS-80C86RH; HS-80C85RH HS-80C86RH; HS-80C85RH HS-80C86RH; HS-80C85RH
最大时钟频率 5 MHz 5 MHz 5 MHz 5 MHz
外部数据总线宽度 8 8 8 8
JESD-30 代码 R-CDIP-T40 R-CDFP-F42 R-CDFP-F42 R-CDIP-T40
DMA 通道数量 4 4 4 4
端子数量 40 42 42 40
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE FLATPACK FLATPACK IN-LINE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
标称供电电压 5 V 5 V 5 V 5 V
表面贴装 NO YES YES NO
技术 CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY
端子形式 THROUGH-HOLE FLAT FLAT THROUGH-HOLE
端子位置 DUAL DUAL DUAL DUAL
总剂量 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V
uPs/uCs/外围集成电路类型 DMA CONTROLLER DMA CONTROLLER DMA CONTROLLER DMA CONTROLLER
Base Number Matches 1 1 1 1
最大供电电压 5.5 V 5.5 V 5.5 V -
最小供电电压 4.5 V 4.5 V 4.5 V -

 
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