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IS61LV2568LL-12B: 产品描述Standard SRAM, 256KX8, 12ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36; 产品类别存储存储; 文件大小55KB，共11页; 制造商Integrated Silicon Solution ( ISSI )

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IS61LV2568LL-12B概述

Standard SRAM, 256KX8, 12ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36

IS61LV2568LL-12B规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
零件包装代码	BGA
包装说明	6 X 8 MM, MINI, BGA-36
针数	36
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	12 ns
JESD-30 代码	R-PBGA-B36
JESD-609代码	e0
长度	10 mm
内存密度	2097152 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	36
字数	262144 words
字数代码	256000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	256KX8
封装主体材料	PLASTIC/EPOXY
封装代码	LFBGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
座面最大高度	1.35 mm
最大供电电压 (Vsup)	3.63 V
最小供电电压 (Vsup)	2.97 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	BALL
端子节距	0.75 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	8 mm
Base Number Matches	1

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IS61LV2568L

IS61LV2568LL

256K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

• High-speed access time:

IS61LV2568L: 8, 10 ns

IS61LV2568LL: 12, 15 ns

• Operating Current:

IS61LV2568L: 50mA (typ.)

IS61LV2568LL: 25mA (typ.)

• Standby Current:

IS61LV2568L: 500µA (typ.)

IS61LV2568LL: 250µA(typ.)

• Multiple center power and ground pins for

greater noise immunity

• Easy memory expansion with

and

options

•

power-down

• TTL compatible inputs and outputs

• Single 3.3V power supply

ISSI

• Packages available:

– 36-pin 400-mil SOJ

– 44-pin TSOP (Type II)

– 36-ball mini BGA (6mm x 8mm)

PRELIMINARY INFORMATION

SEPTEMBER 2002

DESCRIPTION

The

ISSI

IS61LV2568L/IS61LV2568LL is a very high-

speed, low power, 262,144-word by 8-bit CMOS static

RAM. The IS61LV2568L/IS61LV2568LL is fabricated us-

ing

ISSI

's high-performance CMOS technology. This highly

reliable process coupled with innovative circuit design

techniques, yields higher performance and low power

consumption devices.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 36mW (max.) with CMOS input levels.

The S61LV2568L/IS61LV2568LL operates from a single

3.3V power supply and all inputs are TTL-compatible.

The S61LV2568L/IS61LV2568LL is available in 36-pin 400-

mil SOJ, 44-pin TSOP (Type II), and 36-ball mini BGA (6mm

x 8mm) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A17

DECODER

256K X 8

MEMORY ARRAY

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. 00D

09/12/02

IS61LV2568LL-12B相似产品对比

	IS61LV2568LL-12B	IS61LV2568L-10K	IS61LV2568LL-12K	IS61LV2568LL-15K	IS61LV2568LL-15B	IS61LV2568LL-15TI	IS61LV2568L-10B	IS61LV2568LL-15BI	IS61LV2568LL-15KI	IS61LV2568LL-15T
描述	Standard SRAM, 256KX8, 12ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36	Standard SRAM, 256KX8, 10ns, CMOS, PDSO36, 0.400 INCH, SOJ-36	Standard SRAM, 256KX8, 12ns, CMOS, PDSO36, 0.400 INCH, SOJ-36	Standard SRAM, 256KX8, 15ns, CMOS, PDSO36, 0.400 INCH, SOJ-36	Standard SRAM, 256KX8, 15ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36	Standard SRAM, 256KX8, 15ns, CMOS, PDSO44, TSOP2-44	Standard SRAM, 256KX8, 10ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36	Standard SRAM, 256KX8, 15ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36	Standard SRAM, 256KX8, 15ns, CMOS, PDSO36, 0.400 INCH, SOJ-36	Standard SRAM, 256KX8, 15ns, CMOS, PDSO44, TSOP2-44
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	BGA	SOJ	SOJ	SOJ	BGA	TSOP2	BGA	BGA	SOJ	TSOP2
包装说明	6 X 8 MM, MINI, BGA-36	0.400 INCH, SOJ-36	0.400 INCH, SOJ-36	0.400 INCH, SOJ-36	6 X 8 MM, MINI, BGA-36	TSOP2-44	6 X 8 MM, MINI, BGA-36	6 X 8 MM, MINI, BGA-36	0.400 INCH, SOJ-36	TSOP2-44
针数	36	36	36	36	36	44	36	36	36	44
Reach Compliance Code	compliant	compli	compliant	compliant	compliant	compliant	compli	compli	compli	compli
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	12 ns	10 ns	12 ns	15 ns	15 ns	15 ns	10 ns	15 ns	15 ns	15 ns
JESD-30 代码	R-PBGA-B36	R-PDSO-J36	R-PDSO-J36	R-PDSO-J36	R-PBGA-B36	R-PDSO-G44	R-PBGA-B36	R-PBGA-B36	R-PDSO-J36	R-PDSO-G44
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	10 mm	23.5 mm	23.5 mm	23.5 mm	10 mm	18.41 mm	10 mm	10 mm	23.5 mm	18.41 mm
内存密度	2097152 bit	2097152 bi	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bi	2097152 bi	2097152 bi	2097152 bi
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	36	36	36	36	36	44	36	36	36	44
字数	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
字数代码	256000	256000	256000	256000	256000	256000	256000	256000	256000	256000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	85 °C	70 °C	85 °C	85 °C	70 °C
组织	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFBGA	SOJ	SOJ	SOJ	LFBGA	TSOP2	LFBGA	LFBGA	SOJ	TSOP2
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	GRID ARRAY, LOW PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	240	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	240
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.35 mm	3.76 mm	3.76 mm	3.76 mm	1.35 mm	1.2 mm	1.35 mm	1.35 mm	3.76 mm	1.2 mm
最大供电电压 (Vsup)	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V
最小供电电压 (Vsup)	2.97 V	2.97 V	2.97 V	2.97 V	2.97 V	2.97 V	2.97 V	2.97 V	2.97 V	2.97 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	BALL	J BEND	J BEND	J BEND	BALL	GULL WING	BALL	BALL	J BEND	GULL WING
端子节距	0.75 mm	1.27 mm	1.27 mm	1.27 mm	0.75 mm	0.8 mm	0.75 mm	0.75 mm	1.27 mm	0.8 mm
端子位置	BOTTOM	DUAL	DUAL	DUAL	BOTTOM	DUAL	BOTTOM	BOTTOM	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30
宽度	8 mm	10.16 mm	10.16 mm	10.16 mm	8 mm	10.16 mm	8 mm	8 mm	10.16 mm	10.16 mm
湿度敏感等级	3	3	3	3	3	-	3	3	3	-
Base Number Matches	1	1	1	1	1	1	-	-	-	-
厂商名称	-	-	Integrated Silicon Solution ( ISSI )	-	Integrated Silicon Solution ( ISSI )	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )

IS61LV2568LL-12B

IS61LV2568LL-12B概述

IS61LV2568LL-12B规格参数

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IS61LV2568LL-12B相似产品对比

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