DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC337
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 15
Philips Semiconductors
Product specification
NPN general purpose transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complement: BC327.
MAM182
BC337
PINNING
PIN
1
2
3
emitter
base
collector
DESCRIPTION
1
handbook, halfpage
2
3
3
2
1
Fig.1
Simplified outline (TO-92; SOT54) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
50
45
5
500
1
200
625
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT
1999 Apr 15
2
Philips Semiconductors
Product specification
NPN general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC337
BC337-16
BC337-25
BC337-40
DC current gain
V
CEsat
V
BE
C
c
f
T
Note
1. V
BE
decreases by about 2 mV/K with increasing temperature.
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
I
C
= 500 mA; V
CE
= 1 V;
see Figs 2, 3 and 4
I
C
= 500 mA; I
B
= 50 mA
I
C
= 500 mA; V
CE
= 1 V; note 1
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 100 mA; V
CE
= 1 V;
see Figs 2, 3 and 4
MIN.
−
−
−
100
100
160
250
40
−
−
−
100
TYP.
−
−
−
−
−
−
−
−
−
−
5
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
0.2
BC337
UNIT
K/mW
MAX.
100
5
100
600
250
400
600
−
700
1.2
−
−
UNIT
nA
µA
nA
mV
V
pF
MHz
1999 Apr 15
3
Philips Semiconductors
Product specification
NPN general purpose transistor
BC337
handbook, full pagewidth
20
MBH721
hFE
160
VCE = 1 V
120
80
40
0
10
−1
1
10
10
2
IC (mA)
10
3
BC337-16.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
500
MBH720
hFE
400
VCE = 1 V
300
200
100
0
10
−1
1
10
10
2
IC (mA)
10
3
BC337-25.
Fig.3 DC current gain; typical values.
1999 Apr 15
4
Philips Semiconductors
Product specification
NPN general purpose transistor
BC337
handbook, full pagewidth
500
MBH722
hFE
400
VCE = 1 V
300
200
100
0
10
−1
1
10
10
2
IC (mA)
10
3
BC337-40.
Fig.4 DC current gain; typical values.
1999 Apr 15
5
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