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IDT70T651S8DRI

产品描述256K X 36 DUAL-PORT SRAM, 10 ns, PBGA256
产品类别存储   
文件大小346KB,共27页
制造商IDT(艾迪悌)
官网地址http://www.idt.com/
下载文档 详细参数 全文预览

IDT70T651S8DRI概述

256K X 36 DUAL-PORT SRAM, 10 ns, PBGA256

256K × 36 双端口静态随机存储器, 10 ns, PBGA256

IDT70T651S8DRI规格参数

参数名称属性值
功能数量1
端子数量256
最大工作温度85 Cel
最小工作温度-40 Cel
最大供电/工作电压2.6 V
最小供电/工作电压2.4 V
额定供电电压2.5 V
最大存取时间10 ns
加工封装描述BGA-256
状态ACTIVE
工艺CMOS
包装形状SQUARE
包装尺寸GRID ARRAY, LOW PROFILE
表面贴装Yes
端子形式BALL
端子间距1 mm
端子涂层TIN LEAD
端子位置BOTTOM
包装材料PLASTIC/EPOXY
温度等级INDUSTRIAL
内存宽度36
组织256K X 36
存储密度9.44E6 deg
操作模式ASYNCHRONOUS
位数262144 words
位数256K
内存IC类型DUAL-PORT SRAM
串行并行PARALLEL

文档预览

下载PDF文档
Features
HIGH-SPEED 2.5V
256/128K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
PRELIMINARY
IDT70T651/9S
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 8/10/12/15ns (max.)
– Industrial: 10/12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T651/9 easily expands data bus width to 72 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Supports JTAG features compliant to IEEE 1149.1
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 256-ball Ball Grid Array, 208-pin Plastic Quad
Flatpack and 208-ball fine pitch Ball Grid Array.
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
BE
3L
BE
2L
BE
1L
BE
0L
BE
3R
BE
2R
BE
1R
BE
0R
R/
W
L
CE
0L
CE
1L
BB
EE
01
LL
BB
EE
23
LL
BBBB
EEEE
3210
R RRR
R/
W
R
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout0-8_R
Dout9-17_L
Dout9-17_R
Dout18-26_L Dout18-26_R
Dout27-35_L Dout27-35_R
OE
R
256/128K x 36
MEMORY
ARRAY
I/O
0L-
I/O
35L
Di n_L
Di n_R
I/O
0R -
I/O
35R
A
17L(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
17R(1)
A
0R
CE
0L
CE
1L
OE
L
R/W
L
BUSY
L (2,3)
SEM
L
INT
L(3)
ZZ
L
(4)
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
R/W
R
CE
0R
CE
1R
TDI
TD O
JTAG
TC K
TMS
TRST
M/S
BUSY
R(2,3)
SEM
R
INT
R(3)
ZZ
R
(4)
NOTES:
1. Address A
17x
is a NC for IDT70T659.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the sleep
mode pins themselves (ZZx) are not affected during sleep mode.
ZZ
CONTROL
LOGIC
4869 drw 01
NOVEMBER 2003
DSC-5632/3
1
©2003 Integrated Device Technology, Inc.

 
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