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IDT70T633S10BF

产品描述512K X 18 DUAL-PORT SRAM, 10 ns, PBGA256
产品类别存储   
文件大小342KB,共27页
制造商IDT(艾迪悌)
官网地址http://www.idt.com/
下载文档 详细参数 全文预览

IDT70T633S10BF概述

512K X 18 DUAL-PORT SRAM, 10 ns, PBGA256

512K × 18 双端口静态随机存储器, 10 ns, PBGA256

IDT70T633S10BF规格参数

参数名称属性值
功能数量1
端子数量256
最大工作温度85 Cel
最小工作温度-40 Cel
最大供电/工作电压2.6 V
最小供电/工作电压2.4 V
额定供电电压2.5 V
最大存取时间10 ns
加工封装描述17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
状态ACTIVE
工艺CMOS
包装形状SQUARE
包装尺寸GRID ARRAY, LOW PROFILE
表面贴装Yes
端子形式BALL
端子间距1 mm
端子涂层TIN LEAD
端子位置BOTTOM
包装材料PLASTIC/EPOXY
温度等级INDUSTRIAL
内存宽度18
组织512K X 18
存储密度9.44E6 deg
操作模式ASYNCHRONOUS
位数524288 words
位数512K
内存IC类型DUAL-PORT SRAM
串行并行PARALLEL

文档预览

下载PDF文档
Features
HIGH-SPEED 2.5V
512/256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
PRELIMINARY
IDT70T633/1S
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 8/10/12/15ns (max.)
– Industrial: 10/12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T633/1 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
Full hardware support of semaphore signaling between
ports on-chip
On-chip port arbitration logic
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Supports JTAG features compliant to IEEE 1149.1 in
BGA-208 and BGA-256 packages
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 256-ball Ball Grid Array, 144-pin Thin Quad
Flatpack and 208-ball fine pitch Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
UB
R
LB
R
Functional Block Diagram
UB
L
LB
L
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0L
CE
1L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
512/256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
18L
(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
18R
(1)
A
0R
TDI
OE
L
CE
0L
CE
1L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0R
CE
1R
TDO
JTAG
TCK
TMS
TRST
R/W
L
R/W
R
BUSY
L(2,3)
SEM
L
INT
L(3)
(4)
BUSY
R(2,3)
M/S
SEM
R
INT
R(3)
NOTES:
1. Address A
18
x is a NC for IDT70T631.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the
sleep mode pins themselves (ZZx) are not affected during sleep mode.
ZZ
L
ZZ
CONTROL
LOGIC
ZZ
R
(4)
5670 drw 01
NOVEMBER 2003
DSC-5670/3
1
©2003 Integrated Device Technology, Inc.
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