HIGH-SPEED
4K x 9 SYNCHRONOUS
DUAL-PORT RAM
Integrated Device Technology, Inc.
IDT7099S
FEATURES:
• High-speed clock-to-data output times
— Military: 20/25/30ns (max.)
— Commercial: 15/20/25ns (max.)
• Low-power operation
— IDT7099S
Active: 900 mW (typ.)
Standby: 50 mW (typ.)
• Architecture based on Dual-Port RAM cells
— Allows full simultaneous access from both ports
— Independent bit/byte Read and Write inputs for control
functions
• Synchronous operation
— 4ns setup to clock, 1ns hold on all control, data, and
address inputs
— Data input, address, and control registers
— Fast 15ns clock to data out
— 20ns cycle times, 50MHz operation
• Clock enable feature
• Guaranteed data output hold times
• Available in 68-pin PGA, 68-pin PLCC, and 80-pin TQFP
• Military product compliant to MIL-STD-883, Class B
• Industrial temperature range (–40°C to +85°C) is avail-
able, tested to military electrical specifications
DESCRIPTION:
The IDT7099 is a high-speed 4K x 9 bit synchronous Dual-
Port RAM. The memory array is based on Dual-Port memory
cells to allow simultaneous access from both ports. Registers
on control, data, and address inputs provide low set-up and
hold times. The timing latitude provided by this approach
allow systems to be designed with very short realized cycle
times. With an input data register, this device has been
optimized for applications having unidirectional data flow or
bi-directional data flow in bursts. Changing data direction from
reading to writing normally requires one dead cycle.
These Dual-Ports typically operate on only 900mW of
power at maximum high-speed clock-to-data output times as
fast as 15ns. An automatic power down feature, controlled
by
CE
, permits the on-chip circuitry of each port to enter a very
low standby power mode.
The IDT7099 is packaged in a 68-pin PGA, 68-pin PLCC,
and a 80-pin TQFP. Military grade product is manufactured in
compliance with the latest revision of MIL-STD-883, Class B,
making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
REGISTER
REGISTER
I/O
8L
I/O
0-7L
WRITE
LOGIC
SENSE
AMPS
MEMOR
MEMORY
Y
ARRAY
ARRAY
DECODER DECODER
WRITE
LOGIC
SENSE
AMPS
I/O
8R
I/O
0-7R
BIT
OE
L
BYTE
OE
L
CLK
L
REG
en
REG
en
BIT
OE
R
BYTE
OE
R
CLK
R
CLKEN
CLKEN
R
Write
Control
Logic
REG
A
0L
-A
11L
A
0R
-A
11R
Write
Control
Logic
BIT R/
REG
W
L
BYTE R/
W
L
BIT R/
W
R
BYTE R/
W
R
CE
R
3007 drw 01
CE
L
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996 Integrated Device Technology, Inc.
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.
OCTOBER 1996
DSC-3007/3
6.23
1
IDT7099S
HIGH-SPEED 4K x 9 SYNCHRONOUS DUAL-PORT RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
(1,2)
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
INDEX
9
8
7
6
5
4
3
CLK
L
CLK
R
2
1
A
6L
A
7L
A
8L
A
9L
A
10L
A
11L
BYTE
OE
L
BIT
OE
L
V
CC
BYTE R/
W
L
BIT R/
W
L
N/C
CE
L
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
68 67 66 65 64 63 62 61
60
CLKEN
R
CLKEN
L
IDT7099
J68-1
68-Pin PLCC
Top View
(3)
A
7R
A
8R
A
9R
A
10R
A
11R
BYTE
OE
R
BIT
OE
R
GND
GND
BYTE R/
W
R
BIT R/
W
R
N/C
CE
R
GND
I/O
8L
I/O
7L
I/O
6L
GND
I/O
8R
I/O
7R
I/O
6R
3007 drw 03
A
A
53
0R
1R
51
50
N/C
I/O
5L
V
CC
I/O
4L
I/O
3L
I/O
2L
I/O
1L
I/O
0L
GND
GND
I/O
0R
I/O
1R
I/O
2R
I/O
3R
V
CC
I/O
4R
I/O
5R
48
46
44
42
40
38
36
A
5L
52
A
4L
49
A
2L
47
A
0L
45
CLK
L
43
CLKEN
R
41
A
1R
39
A
3R
37
A
5R
35
34
A
7L
55
54
A
6L
A
3L
A
1L
CLKEN
L
CLK
R
A
0R
A
2R
A
4R
A
6R
32
33
A
7R
A
9L
57
56
A
8L
A
9R
30
A
8R
31
A
11L
59
58
A
10L
A
11R
28
A
10R
29
OE
L
61
BIT
BYTE
OE
L
60
IDT7099
G68-1
68-Pin PGA
Top View
(3)
OE
R
26
BIT
BYTE
OE
R
27
BYTE
R/
L
W
V
CC
62
GND
24
GND
25
63
NC
65
BIT
R/
L
W
BIT
R/
R
W
BYTE
R/
R
W
64
22
23
GND
67
66
CE
L
I/O
8L
1
3
5
7
9
11
13
15
CE
R
20
21
NC
I/O
7L
68
I/O
8R
18
GND
19
I/O
6L
2
NC
4
V
CC
6
I/O
3L
8
I/O
1L
GND
10
I/O
0R
12
I/O
2R
14
V
CC
16
I/O
6R
17
I/O
7R
I/O
5L
INDEX
A
B
I/O
4L
C
I/O
2L
D
I/O
0L
E
GND
F
I/O
1R
G
I/O
3R
H
I/O
4R
J
I/O
5R
K
L
3007 drw 02
NOTES:
1. All VCC pins must be connected to power supply.
2. All ground pins must be connected to ground supply.
3. This text does not indicate orientation of the actual
part-marking.
6.23
2
IDT7099S
HIGH-SPEED 4K x 9 SYNCHRONOUS DUAL-PORT RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS (CONT'D)
(1,2)
N/C
N/C
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
CLK
L
CLK
R
Reference
CLKEN
L
CLKEN
R
N/C
A
6L
A
7L
A
8L
A
9L
A
10L
A
11L
N/C
BYTE
OE
L
BIT
OE
L
V
CC
BYTE R/
W
L
BIT R/
W
L
N/C
CE
L
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
60
59
58
57
56
55
54
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
N/C
53
52
51
50
49
48
47
46
45
44
43
42
41
IDT7099
PN80-1
80-Pin TQFP
Top View
(3)
N/C
A
7R
A
8R
A
9R
A
10R
A
11R
N/C
BYTE
OE
R
BIT
OE
R
GND
GND
BYTE R/
W
R
BIT R/
W
R
N/C
CE
R
GND
I/O
8L
I/O
7L
I/O
6L
N/C
GND
I/O
8R
I/O
7R
I/O
6R
N/C
3007 drw 04
NOTES:
1. All VCC pins must be connected to power supply.
2. All ground pins must be connected to ground supply.
3. This text does not indicate the orientaion of the actual part-marking.
N/C
N/C
I/O
5L
V
CC
I/O
4L
I/O
3L
I/O
2L
I/O
1L
I/O
0L
GND
GND
I/O
0R
I/O
1R
I/O
2R
I/O
3R
V
CC
I/O
4R
I/O
5R
N/C
N/C
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Military
Commercial
Ambient
Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
VCC
5.0V
±
10%
5.0V
±
10%
3007 tbl 02
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect to
GND
Terminal Voltage
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output Current
Commercial
Military
Unit
V
–0.5 to +7.0 –0.5 to +7.0
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
VCC
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
3007 tbl 03
V
TERM
(3)
T
A
T
BIAS
T
STG
I
OUT
–0.5 to VCC –0.5 to VCC
0 to +70
–55 to +125
V
°C
°C
°C
mA
GND
V
IH
V
IL
–55 to +125 –65 to +135
–55 to +125 –65 to +150
50
50
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed V
cc
+ 0.5V.
CAPACITANCE
(1)
(T
A
= +25°C, F = 1.0MH
Z
) TQFP ONLY
Symbol Parameter
CIN
COUT
Input Capacitance
Output Capacitance
Condition
(2)
VIN = 3dV
VOUT = 3dV
Max. Unit
9
10
pF
pF
NOTES:
3007 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V
TERM
must not exceed V
cc
+ 0.5V for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of V
TERM
> V
cc
+ 0.5V.
3007 tbl 04
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output
switch from 0V to 3V or from 3V to 0V.
6.23
3
IDT7099S
HIGH-SPEED 4K x 9 SYNCHRONOUS DUAL-PORT RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
IDT7099S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
V
CC
= 5.5V, V
IN
= 0V to V
CC
Min.
—
—
—
2.4
Max.
10
10
0.4
—
Unit
µA
µA
V
V
3007 tbl 05
CE
= V
IH
, VOUT = 0V to V
CC
I
OL
= 4mA
I
OL
= –4mA
NOTE:
1. Input leakages are undefined at V
CC
≤
2.0V.
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(4)
(V
CC
= 5V
±
10%)
IDT7099S15
Com'l. Only
Symbol
I
CC
Parameter
Test Conditions
Version Typ.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
Mil.
Com’l.
—
180
—
90
—
160
—
10
—
155
Max.
—
300
—
140
—
210
—
15
—
200
Typ.
170
170
85
85
150
150
10
10
145
145
Max.
310
290
140
130
210
200
20
—
200
190
Typ.
160
160
80
80
140
140
10
10
135
135
Max.
290
270
130
110
200
180
20
—
190
170
Dynamic
CE
= V
IL
Operating
Outputs Open
Current (Both f = fm
AX
(1)
Ports Active)
Standby
CE
L and
Current (Both
CE
R = V
IH
Ports—TTL
f = fm
AX
(1)
Level Inputs)
Standby
Current (One
Port—TTL
Level Inputs)
Full Standby
Current (Both
Ports—CMOS
Level Inputs)
Full Standby
Current (One
Port—CMOS
Level Inputs)
IDT7099S20
IDT7099S25
IDT7099S30
Mil Only
Typ.
160
—
80
—
140
—
10
—
135
—
170
—
3007 tbl 06
Max.
270
—
110
—
180
—
20
Unit
mA
I
SB1
mA
I
SB2
CE
'A'
= V
IL
and
CE
'B'
= V
IH
(3)
Active Port
Outputs Open,
f = fm
AX
(1)
Both Ports
CE
R
and
CE
L
≥
V
CC
– 0.2V
V
IN
≥
V
CC
– 0.2V
or V
IN
≤
0.2V, f = 0
(2)
-0.2V V
IN
≥
V
CC
– 0.2V or
V
IN
≤
0.2V, Active Port
Outputs Open, f = fm
AX
(1)
(3),
mA
I
SB3
mA
I
SB4
CE
'A'
<0.2V and
CE
'B '
> V
CC
mA
NOTES:
1. At f = fmax, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of the 1/t
CLK
, using
"AC TEST CONDITIONS" of input levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. Vcc = 5V, TA = 25°C for Typ, and are not production tested. I
CC DC
= 150mA (Typ).
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns
1.5V
1.5V
Figures 1, 2, and 3
3007 tbl 07
6.23
4
IDT7099S
HIGH-SPEED 4K x 9 SYNCHRONOUS DUAL-PORT RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
8
5V
893Ω
DATA
OUT
347Ω
30pF
DATA
OUT
347Ω
5pF
5V
893Ω
7
6
∆tCD
(Typical, ns)
5
4
3
2
- 10pF is the I/O capacitance
of this device, and 3pF is the
AC Test Load Capacitance
3007 drw 05
3007 drw 06
Figure 1. AC Output Test load.
Figure 2. Output Test Load
(For t
CLZ
, t
CHZ
, t
OLZ
, and t
OHZ
).
Including scope and jig.
1
0
-1
20 40 60 80 100 120 140 160 180 200
Capacitance (pF)
3007 drw 07
Figure 3. Typical Output Derating (Lumped Capacitive Load).
AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE RANGE —
(READ AND WRITE CYCLE TIMING)
(Commercial: V
CC
= 5V
±
10%, T
A
= 0°C to +70°C; Military: V
CC
= 5V
±
10%, T
A
= -55°C to +125°C)
Commercial
7099S15
Symbol
t
CYC
t
CH
t
CL
t
CD
t
S
t
H
t
DC
t
CKLZ
t
CKHZ
t
OE
t
OLZ
t
OHZ
t
SCK
t
HCK
t
CWDD
Parameter
Clock Cycle Time
Clock High Time
Clock Low Time
Clock High to Output Valid
Registered Signal Set-up Time
Registered Signal Hold Time
Data Output Hold After Clock High
Clock High to Output Low-Z
(1,2)
Clock High to Output High-Z
(1,2)
Output Enable to Output Valid
Output Enable to Output Low-Z
(1,2)
Output Disable to Output High-Z
(1,2)
Clock Enable, Disable Set-up Time
Clock Enable, Disable Hold Time
Write Port Clock High to Read
Data Delay
20
6
6
—
4
1
3
2
—
—
0
—
4
2
—
—
—
—
15
—
—
—
—
7
8
—
7
—
—
30
7099S20
20
8
8
—
5
1
3
2
—
—
0
—
5
2
—
—
—
—
20
—
—
—
—
9
10
—
9
—
—
35
7099S25
25
10
10
—
6
1
3
2
—
—
0
—
6
2
—
—
—
—
25
—
—
—
—
12
12
—
11
—
—
45
7099S20
20
8
8
—
5
2
3
2
—
—
0
—
5
3
—
—
—
—
20
—
—
—
—
9
10
—
9
—
—
35
Min. Max. Min. Max.
Min. Max. Min. Max.
Military
7099S25
25
10
10
—
6
2
3
2
—
—
0
—
6
3
—
—
—
—
25
—
—
—
—
12
12
—
11
—
—
45
7099S30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3007 tbl 08
Min. Max. Min. Max.
30
12
12
—
7
2
3
2
—
—
0
—
7
3
—
—
—
—
30
—
—
—
—
15
15
—
14
—
—
55
Port-to-Port Delay
NOTES:
1. Transition is measured +/-200mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
6.23
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
