HIGH-SPEED
16K x 9 DUAL-PORT
STATIC RAM
Integrated Device Technology, Inc.
IDT7016S/L
FEATURES:
• True Dual-Ported memory cells which allow simulta-
neous access of the same memory location
• High-speed access
— Military: 20/25/35ns (max.)
— Commercial:12/15/20/25/35ns (max.)
• Low-power operation
— IDT7016S
Active: 750mW (typ.)
Standby: 5mW (typ.)
— IDT7016L
Active: 750mW (typ.)
Standby: 1mW (typ.)
• IDT7016 easily expands data bus width to 18 bits or
more using the Master/Slave select when cascading
more than one device
• M/
S
= H for
BUSY
output flag on Master
M/
S
= L for
BUSY
input on Slave
• Busy and Interrupt Flags
• On-chip port arbitration logic
• Full on-chip hardware support of semaphore signaling
between ports
• Fully asynchronous operation from either port
• Devices are capable of withstanding greater than
2001V electrostatic discharge
• TTL-compatible, single 5V (±10%) power supply
• Available in ceramic 68-pin PGA, 68-pin PLCC, and
an 80-pin TQFP
• Industrial temperature range (–40°C to +85°C) is
available, tested to military electrical specifications
DESCRIPTION:
The IDT7016 is a high-speed 16K x 9 Dual-Port Static
RAMs. The IDT7016 is designed to be used as stand-
alone Dual-Port RAM or as a combination MASTER/
SLAVE Dual-Port RAM for 18-bit-or-more wider systems.
FUNCTIONAL BLOCK DIAGRAM
OE
L
OE
R
CE
L
R/
W
L
CE
R
R/
W
R
I/O
0L
- I/O
8L
I/O
Control
I/O
Control
I/O
0R
-I/O
8R
BUSY
L(1,2)
A
13L
A
0L
Address
Decoder
14
BUSY
R(1,2)
MEMORY
ARRAY
Address
Decoder
A
13R
A
0R
14
OE
L
R/
CE
L
W
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
R/
OE
R
W
R
SEM
R
(2)
SEM
L
INT
L
(2)
M/
S
INT
R
3190 drw 01
NOTES:
1. In MASTER mode:
BUSY
is an output and is a push-pull driver
In SLAVE mode:
BUSY
is input.
2.
BUSY
outputs and
INT
outputs are non-tri-stated push-pull drivers.
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996 Integrated Device Technology, Inc.
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.
OCTOBER 1996
DSC-3190/2
6.13
1
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
Using the IDT MASTER/SLAVE Dual-Port RAM approach in
18-bit or wider memory system applications results in full-
speed, error-free operation without the need for additional
discrete logic.
This device provides two independent ports with separate
control, address, and I/O pins that permit independent,
asynchronous access for reads or writes to any location in
memory. An automatic power down feature controlled by
CE
permits the on-chip circuitry of each port to enter a very low
standby power mode.
Fabricated using IDT’s CMOS high-performance technol-
ogy, these devices typically operate on only 750mW of power.
The IDT7016 is packaged in a ceramic 68-pin PGA, a 64-
pin PLCC and an 80-pin TQFP (Thin Quad FlatPack). Military
grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B, making it ideally suited to
military temperature applications demanding the highest level
of performance and reliability.
PIN CONFIGURATIONS
(1,2)
I/O
1L
I/O
0L
I/O
8L
SEM
L
4
W
L
R/
5
INDEX
I/O
2L
I/O
3L
I/O
4L
I/O
5L
GND
I/O
6L
I/O
7L
V
CC
GND
I/O
0R
I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
I/O
6R
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
9
8
7
6
3
N/C
A
13L
V
CC
A
12L
A
11L
A
10L
A
9L
A
8L
A
7L
A
6L
2
1 68 67 66 65 64 63 62 61
60
59
58
57
56
55
OE
L
CE
L
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
INT
L
IDT7016
J68-1
PLCC
TOP VIEW(3)
54
53
52
51
50
49
48
47
46
45
BUSY
L
BUSY
R
GND
M/
S
INT
R
44
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
A
0R
A
1R
A
2R
A
3R
A
4R
3190 drw 02
I/O
7R
I/O
8R
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. This text does not imply orientation of Part-Mark.
SEM
R
R/
N/C
A
13R
GND
A
12R
A
11R
A
10R
A
9R
A
8R
A
7R
A
6R
A
5R
OE
R
CE
R
W
R
PIN NAMES
Left Port
Right Port
Names
Chip Enable
Read/Write Enable
Output Enable
Address
Data Input/Output
Semaphore Enable
Interrupt Flag
Busy Flag
Master or Slave Select
Power
Ground
3190 tbl 01
CE
L
R/
W
L
OE
L
A
0L
– A
13L
I/O
0L
– I/O
8L
CE
R
R/
W
R
OE
R
A
0R
– A
13R
I/O
0R
– I/O
8R
SEM
L
INT
L
BUSY
L
M/
S
V
CC
SEM
R
INT
R
BUSY
R
GND
6.13
2
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS (CONT'D)
(1,2)
I/O
0L
I/O
8L
I/O
1L
R/
L
SEM
L
A
11L
A
10L
A
13L
V
CC
A
12L
OE
L
W
CE
L
A
8L
A
7L
A
6L
A
9L
INDEX
NC
NC
71
70
69
66
65
64
63
68
67
80
79
78
77
76
74
73
72
75
62
61
NC
NC
60
59
58
57
56
55
54
NC
I/O
2L
I/O
3L
I/O
4L
I/O
5L
GND
I/O
6L
I/O
7L
V
CC
NC
GND
I/O
0R
I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
I/O
6R
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
NC
A
5L
A
4L
A
3L
A
2L
A
1L
A
0L
INT
L
IDT7016
PN-80
TQFP
TOP VIEW(3)
53
52
51
50
49
48
47
46
45
44
43
42
41
BUSY
L
GND
M/
S
INT
R
BUSY
R
A
0R
A
1R
A
2R
A
3R
A
4R
NC
NC
30
32
33
21
22
36
37
24
25
27
28
29
31
35
23
26
34
38
39
40
19
20
I/O
7R
I/O
8R
R/
R
NC
A
13R
NC
A
11R
SEM
R
A
10R
A
9R
A
8R
A
12R
A
7R
OE
R
CE
R
GND
A
6R
A
5R
NC
51
11
53
A
7L
55
A
9L
A
5L
52
A
6L
54
A
8L
NC
3190 drw 03
W
50
A
4L
49
A
3L
48
A
2L
47
A
1L
46
44
42
A
0L
BUSY
L
M/
S
45
INT
L
40
38
A
1R
INT
R
36
A
3R
35
A
4R
32
A
7R
30
A
9R
34
A
5R
33
A
6R
31
A
8R
10
43
41
39
37
BUSY
R
A
0R
A
2R
GND
09
08
57
56
A
11L
A
10L
59
58
V
CC
A
12L
61
60
N/C A
13L
63
07
06
IDT7016
G68-1
68-PIN PGA
TOP VIEW(3)
28
29
A
11R
A
10R
26
27
GND A
12R
24
N/C
25
A
13R
23
05
SEM
L
CE
L
OE
L
R/
W
L
64
62
65
04
SEM
R
20
22
CE
R
03
67
66
I/O
0L
I/O
8L
1
3
68
I/O
1L
I/O
2L
I/O
4L
2
4
I/O
3L
I/O
5L
A
B
C
5
7
9
11
13
15
GND I/O
7L
GND I/O
1R
V
CC
I/O
4R
6
8
I/O
6L
V
CC
D
E
10
12
14
16
I/O
0R
I/O
2R
I/O
3R
I/O
5R
F
G
H
J
OE
R
21
R/
R
W
02
18
19
I/O
7R
I/O
8R
17
I/O
6R
K
L
3190 drw 04
01
NOTES:
INDEX
1. All Vcc pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. This text does not indicate orientation of the actual part-marking.
6.13
3
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL
Inputs
(1)
Outputs
CE
H
L
L
X
R/
W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
I/O
0-8
High-Z
DATA
IN
DATA
OUT
High-Z
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
Mode
NOTE:
1. Condition: A
0L
— A
13L
is not equal to A
0R
— A
13R.
3190 tbl 02
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
(1)
Inputs
Outputs
CE
H
H
L
R/
W
OE
L
X
X
SEM
L
L
L
I/O
0-8
DATA
OUT
DATA
IN
—
Write I/O
0
into Semaphore Flag
Not Allowed
Mode
Read Semaphore Flag Data Out (I/O
0
- I/O
8
)
u
X
H
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all I/O's (I/O
0
-I/O
8
). These eight semaphores are addressed by A
0
-A
2.
3190 tbl 03
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
Rating
Commercial
Military
–0.5 to +7.0
Unit
V
Terminal Voltage –0.5 to +7.0
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
0 to +70
–55 to +125
–55 to +125
50
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Military
Ambient
Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
V
CC
5.0V
±
10%
5.0V
±
10%
3190 tbl 05
T
A
T
BIAS
T
STG
I
OUT
–55 to +125
–65 to +135
–65 to +150
50
°C
°C
°C
mA
Commercial
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
—
—
Max. Unit
5.5
0
6.0
(2)
0.8
V
V
V
V
3190 tbl 06
NOTES:
3190 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.5V for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of V
TERM
> Vcc
+ 0.5V.
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
CAPACITANCE
(1)
(T
A
= +25°C, f = 1.0MHz, TQFP ONLY)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max. Unit
9
10
pF
pF
3190 tbl 07
NOTES:
1.
This parameter is determined by device characteristics but is not produc-
tion tested.
2.
3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V .
6.13
4
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
7016S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= 5.5V, V
IN
= 0V to V
CC
Min.
—
—
—
2.4
Max.
10
10
0.4
—
—
—
—
2.4
7016L
Min.
Max.
5
5
0.4
—
Unit
µA
µA
V
V
3190 tbl 08
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= -4mA
NOTE:
1. At Vcc < 2.0V, Input leakages are undefined.
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(V
CC
= 5.0V
±
10%)
Symbol
I
CC
Parameter
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports — TTL
Level Inputs)
Standby Current
(One Port — TTL
Level Inputs)
Full Standby Current
(Both Ports — All
CMOS Level Inputs)
Test
Condition
Version
MIL.
COM’L.
MIL.
COM’L.
MIL.
COM’L.
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
7016X12
7016X15
Com'l. Only
Com'l. Only
(2)
Typ.
Max. Typ.
(2)
Max.
—
—
170
170
—
—
25
25
—
—
105
105
—
—
1.0
0.2
—
—
100
100
—
—
325
275
—
—
70
60
—
—
200
170
—
—
15
5
—
—
180
150
—
—
170
170
—
—
25
25
—
—
105
105
—
—
1.0
0.2
—
—
100
100
—
—
310
260
—
—
60
50
—
—
190
160
—
—
15
5
—
—
170
140
3190 tbl 09
Unit
CE
= VIL, Outputs Open
SEM
= V
IH
f = f
MAX(3)
mA
I
SB1
CE
R
=
CE
L
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX(3)
mA
I
SB2
I
SB3
Both Ports
CE
L
and
MIL.
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
COM’L.
V
IN
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
Active Port Outputs Open
f = f
MAX(3)
SEM
R
=
SEM
L
= V
IH
CE
"A"
=V
IL
and
CE
"B"
= V
IH(5)
mA
mA
I
SB4
Full Standby Current
(One Port — All
CMOS Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
IN
>V
CC
- 0.2V or V
IN
<0.2V
Active Port Outputs Open,
f = f
MAX(3)
MIL.
mA
COM'L.
NOTES:
1. "X" in part numbers indicates power rating (S or L).
2. V
CC
= 5V, T
A
= +25°C, and are not production tested. I
CCDC
= 120mA(typ.)
3. At f = f
MAX
,
address and I/Os are cycling at the maximum frequency read cycle of 1/t
RC.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite of port "A".
6.13
5
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