DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | SAMSUNG(三星) |
| 零件包装代码 | BGA |
| 包装说明 | TFBGA, |
| 针数 | 60 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST |
| 最长访问时间 | 0.45 ns |
| 其他特性 | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B60 |
| JESD-609代码 | e1 |
| 长度 | 11 mm |
| 内存密度 | 536870912 bit |
| 内存集成电路类型 | DDR DRAM |
| 内存宽度 | 4 |
| 湿度敏感等级 | 2 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 60 |
| 字数 | 134217728 words |
| 字数代码 | 128000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | |
| 组织 | 128MX4 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TFBGA |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | 260 |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.2 mm |
| 自我刷新 | YES |
| 最大供电电压 (Vsup) | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | OTHER |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL |
| 端子节距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 40 |
| 宽度 | 10 mm |
| Base Number Matches | 1 |
| K4T51043QC-ZCD60 | K4T51163QC-ZCD60 | K4T51083QC-ZCD60 | K4T51163QC-ZLD60 | K4T51043QC-ZLD60 | K4T51083QC-ZLD60 | |
|---|---|---|---|---|---|---|
| 描述 | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
| 包装说明 | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, |
| 针数 | 60 | 84 | 60 | 84 | 60 | 60 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B60 | R-PBGA-B84 | R-PBGA-B60 | R-PBGA-B84 | R-PBGA-B60 | R-PBGA-B60 |
| JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 |
| 长度 | 11 mm | 13 mm | 11 mm | 13 mm | 11 mm | 11 mm |
| 内存密度 | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 4 | 16 | 8 | 16 | 4 | 8 |
| 湿度敏感等级 | 2 | 2 | 3 | 2 | 2 | 3 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 60 | 84 | 60 | 84 | 60 | 60 |
| 字数 | 134217728 words | 33554432 words | 67108864 words | 33554432 words | 134217728 words | 67108864 words |
| 字数代码 | 128000000 | 32000000 | 64000000 | 32000000 | 128000000 | 64000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 组织 | 128MX4 | 32MX16 | 64MX8 | 32MX16 | 128MX4 | 64MX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | 260 |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 自我刷新 | YES | YES | YES | YES | YES | YES |
| 最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 40 | 40 | NOT SPECIFIED | 40 | 40 | NOT SPECIFIED |
| 宽度 | 10 mm | 11 mm | 10 mm | 11 mm | 10 mm | 10 mm |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | - | SAMSUNG(三星) | SAMSUNG(三星) |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - |
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