Silicon MOS FETs (Small Signal)
2SK0615
(2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I
Features
M
Di ain
sc te
on na
tin nc
ue e/
d
(0.4)
2.0
±0.2
G
Low ON-resistance
G
High-speed switching
G
Allowing to be driven directly by CMOS and TTL
G
M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9
±0.1
(1.5)
(1.5)
2.5
±0.1
(1.0)
(1.0)
3.5
±0.1
R 0.9
R 0.7
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Symbol
Drain to Source voltage
Gate to Source voltage
Drain current
V
DS
I
D
Ratings
80
20
Unit
V
V
A
A
1.0
±0.1
(0.85)
2.4
±0.2
0.45
±0.05
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
*
PC board: Copper foil of the drain portion should have a area of 1cm
2
or
more and the board thickness should be 1.7mm.
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
Gate to Source leakage current
I
DSS
I
GSS
V
th
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Pl
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Turn-off time
*1
*2
Pulse measurement
t
on
, t
off
measurement circuit
V
out
V
in
= 10V
68Ω
V
DD
= 30V
V
out
V
in
10%
V
in
10%
90%
t = 1µ
S
f = 1MH
Z
50Ω
ea
s
ht e v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
V
GSO
I
DP
±0.5
±1
1
1
2
3
(2.5)
(2.5)
1.25
±0.05
0.55
±0.1
P
D *
T
ch
T
stg
W
150
°C
°C
1: Source
2: Drain
3: Gate
EIAJ: SC-71
M-A1 Package
−55
to +150
Conditions
min
typ
max
10
Unit
µA
µA
V
V
V
DS
= 60V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
0.1
V
DSS
I
DS
= 100µA, V
GS
= 0
I
D
= 1mA, V
DS
= V
GS
I
D
= 0.5A, V
GS
= 10V
80
1.5
3.5
4
R
DS(on)
| Y
fs
|
C
oss
*1
2
I
D
= 0.2A, V
DS
= 15V, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
300
45
30
8
mS
pF
pF
pF
ns
ns
t
on*1, 2
t
off
*1, 2
15
20
90% V
out
t
on
t
off
Note) The part number in the parenthesis shows conventional part number.
4.1
±0.2
4.5
±0.1
Ω
1
Silicon MOS FETs (Small Signal)
P
D
Ta
1.6
1.2
Copper foil of the drain portion
should have a area of 1cm
2
or more and the board
thickness should be 1.7mm.
Ta=25˚C
1.0
V
GS
=5.5V
1.0
2SK0615
I
D
V
DS
1.2
V
DS
=10V
Ta=25˚C
I
D
V
GS
Allowable power dissipation P
D
(W)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Drain current I
D
(A)
0.8
5V
Drain current I
D
(A)
0.8
0.6
4.5V
0.6
M
Di ain
sc te
on na
tin nc
ue e/
d
0.4
0.4
3.5V
3V
0.2
0.2
0
0
0
20
40
60
80 100 120 140 160
0
2
4
6
8
10
0
2
4
6
4V
8
10
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
Forward transfer admittance |Y
fs
| (mS)
500
V
DS
=15V
f=1kHz
Ta=25˚C
100
V
GS
=0
f=1MHz
Ta=25˚C
Drain to source ON-resistance R
DS(on)
(
Ω
)
600
400
300
200
100
0
0
1
2
3
4
5
ea
s
ht e v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
120
6
5
80
4
60
3
Ta=75˚C
40
C
iss
2
25˚C
20
1
–25˚C
C
oss
C
rss
0
0
6
1
3
10
30
100
300
1000
0
4
8
12
16
| Y
fs
|
V
GS
C
iss
, C
oss
, C
rss
V
DS
R
DS(on)
V
GS
I
D
=500mA
20
Gate to source voltage V
GS
(V)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
R
DS(on)
Ta
Drain to source ON-resistance R
DS(on)
(
Ω
)
6
I
D
=500mA
5
4
3
V
GS
=5V
10V
2
1
0
–50
–25
0
25
Ambient temperature Ta (˚C)
2
Pl
50
75
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
