< Low Noise GaAs HEMT >
MGF4936AM
4pin flat lead package
DESCRIPTION
The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.50dB (Typ.)
High associated gain
@ f=12GHz
Gs = 12.0dB (Typ.)
Fig.1
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=7mA
ORDERING INFORMATION
General part number:
MGF4936AM-75
Tape & reel
15000pcs/reel
RoHS COMPLIANT
MGF4936AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
PT
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
(Ta=25C )
Ratings
-3
-3
IDSS
50
125
-55 to +125
(Ta=25C )
Unit
V
V
mA
mW
C
C
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)GDO
I
GSS
I
DSS
V
GS(off)
Gs
Parameter
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Associated gain
Test conditions
MIN.
IG=-10A
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500A
VDS=2V,
-3.5
--
12
-0.1
11.0
--
Limits
TYP.
--
--
--
--
12.0
0.50
MAX
--
50
60
-1.5
--
0.70
Unit
V
A
mA
V
dB
dB
ID=7mA,f=12GHz
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Publication Date : Oct., 2011
1
< Low Noise GaAs HEMT>
MGF4936AM
4pin flat lead package
Fig.1
0.30
+0.1
-0.05
2.10
±0.1
1.30
±0.05
(0.65) (0.65)
0.30
-0.05
+0.1
②
①
±0.1
±0.1
Top
2.05
1.25
F
□
③
②
+0.1
0.30
-0.05
+0.1
-0.05
0.40
0.11
-0
+0.05
(0.60) (0.65)
0.49
±0.05
1.25
±0.05
Side
③
②
(0.85)
Bottom
Unit: mm
①
Gate
②
Source
③
Drain
②
①
(GD-30)
Publication Date : Oct., 2011
2
< Low Noise GaAs HEMT>
MGF4936AM
4pin flat lead package
TYPICAL CHARACTERISTICS
(Ta=25°C)
I
D
vs. V
DS
50
50
I
D
vs. V
GS
40
Drain Current, ID (mA)
0
1
2
3
4
Drain Current, I
D
(mA)
40
30
30
20
20
10
10
0
Drain to Source voltage, V
DS
(V)
0
-1
-0.5
Gate to Source voltage, V
GS
(V)
0
NF & Gs vs. I
D
1.6
1.4
1.2
1.0
16
14
12
10
8
6
4
2
0
0
5
10
15
20
{VD=2V, f=12GHz}
NF (dB)
0.8
0.6
0.4
0.2
0.0
ID (mA)
Publication Date : Oct., 2011
3
Gs (dB)
< Low Noise GaAs HEMT>
MGF4936AM
4pin flat lead package
S PARAMETERS
(VDS=2V, ID=7mA, Ta=25deg.C)
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
S11
(mag)
0.998
0.978
0.950
0.908
0.856
0.794
0.730
0.654
0.579
0.513
0.479
0.449
0.462
0.491
0.543
0.597
0.643
0.680
0.723
0.758
(ang)
-12.7
-25.7
-38.8
-52.5
-66.6
-81.4
-97.6
-115.3
-133.6
-154.1
-174.3
163.9
142.5
125.9
108.2
90.4
76.3
63.2
52.2
41.8
S21
(mag)
3.891
3.886
3.881
3.874
3.859
3.828
3.797
3.707
3.578
3.435
3.313
3.154
3.038
2.998
2.914
2.730
2.556
2.303
2.054
1.883
(ang)
165.0
150.2
135.7
120.9
105.9
90.8
75.4
59.8
44.6
29.7
15.5
1.7
-12.5
-26.3
-41.3
-57.1
-73.0
-87.8
-100.4
-112.9
S12
(mag)
0.014
0.028
0.042
0.054
0.065
0.075
0.084
0.090
0.093
0.094
0.095
0.092
0.094
0.092
0.095
0.105
0.110
0.115
0.115
0.118
(ang)
80.2
70.3
60.9
51.2
41.7
32.1
22.9
12.8
3.7
-5.1
-11.6
-19.3
-24.7
-25.6
-28.3
-35.7
-44.3
-52.9
-61.3
-70.6
S22
(mag)
0.693
0.680
0.659
0.631
0.594
0.551
0.505
0.444
0.384
0.322
0.275
0.221
0.195
0.198
0.219
0.263
0.319
0.369
0.418
0.466
(ang)
-10.5
-21.1
-31.7
-42.5
-53.5
-64.6
-76.7
-89.5
-101.9
-116.0
-131.1
-147.1
-169.8
171.0
148.4
122.3
100.9
82.0
67.1
54.0
NOISE PARAMETERS
Freq.
(GHz)
NFmin
(dB)
Γ
opt
(mag)
(ang)
rn
0.23
0.19
0.15
0.12
0.08
0.05
0.04
0.04
0.06
0.07
0.12
0.16
0.23
[Foot pattern for measurement]
6
7
8
9
10
11
12
13
14
15
16
17
18
0.20
0.25
0.29
0.34
0.38
0.43
0.47
0.52
0.56
0.61
0.65
0.70
0.74
0.75
0.68
0.61
0.54
0.48
0.42
0.38
0.35
0.35
0.36
0.39
0.45
0.53
47.6
62.4
78.8
96.9
116.4
137.2
159.4
-177.7
-153.9
-129.7
-105.2
-80.4
-55.3
0.
35
35
0.
0.
43
0.
35
0.40
2.5mm
Note: rn is normarised by 50 ohm.
Board:
r=3.38
Thickness: 0.5mm
Publication Date : Oct., 2011
4
0.
43
4-φ0.30TH
Reference point
0.55
0.90
2.00
40
0.
50
0.
35
0.
< Low Noise GaAs HEMT>
MGF4936AM
4pin flat lead package
S PARAMETERS
(VDS=2V, ID=10mA, Ta=25deg.C)
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
S11
(mag)
0.996
0.970
0.932
0.880
0.817
0.746
0.675
0.595
0.519
0.454
0.422
0.395
0.413
0.447
0.501
0.562
0.613
0.654
0.701
0.736
(ang)
-13.4
-27.0
-40.5
-54.6
-68.8
-83.6
-99.8
-117.2
-135.5
-155.9
-176.2
161.6
140.3
124.3
107.1
89.5
75.5
62.5
51.6
41.3
S21
(mag)
4.971
4.929
4.872
4.799
4.702
4.585
4.471
4.295
4.089
3.890
3.724
3.532
3.399
3.360
3.287
3.098
2.925
2.656
2.375
2.194
(ang)
164.1
148.5
133.1
117.8
102.5
87.3
72.0
56.8
42.2
27.9
14.5
1.3
-12.1
-25.2
-39.6
-55.0
-70.5
-85.3
-97.9
-110.2
S12
(mag)
0.013
0.026
0.038
0.050
0.060
0.069
0.078
0.085
0.089
0.092
0.096
0.095
0.099
0.101
0.104
0.113
0.118
0.123
0.123
0.124
(ang)
80.2
71.3
62.1
53.1
44.3
36.0
27.6
18.5
10.2
2.0
-4.6
-12.2
-18.7
-21.2
-25.4
-33.7
-42.6
-51.8
-60.1
-70.2
S22
(mag)
0.638
0.623
0.601
0.571
0.534
0.492
0.446
0.388
0.333
0.272
0.226
0.174
0.143
0.143
0.162
0.206
0.264
0.317
0.369
0.419
(ang)
-10.3
-20.7
-31.0
-41.3
-51.7
-62.0
-73.4
-85.1
-96.2
-109.2
-123.1
-137.9
-162.2
176.8
151.6
121.7
99.6
79.8
65.2
52.1
NOISE PARAMETERS
Freq.
(GHz)
NFmin
(dB)
Γ
opt
(mag)
(ang)
rn
0.21
0.18
0.13
0.10
0.07
0.06
0.05
0.05
0.06
0.07
0.11
0.16
0.22
6
7
8
9
10
11
12
13
14
15
16
17
18
0.19
0.23
0.28
0.32
0.37
0.41
0.46
0.51
0.55
0.60
0.64
0.69
0.73
0.70
0.63
0.56
0.49
0.43
0.38
0.34
0.32
0.31
0.33
0.36
0.42
0.50
47.3
62.4
79.1
97.6
117.4
138.7
161.3
-175.4
-151.3
-126.9
-102.3
-77.4
-52.3
Note: rn is normarised by 50 ohm.
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
Publication Date : Oct., 2011
5
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