RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RS3501M
THRU
RS3507M
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes
FEATURES
*
*
*
*
*
*
Low leakage
Low forward voltage
Mounting position: Any
Surge overload rating: 400 amperes peak
Ideal for printed cikcuit boakds
High forward surge current capability
RS-35M
.189 (4.8)
1.193 (30.3)
1.169 (29.7)
.197 (5)
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
.150 (3.8)
.134 (3.4)
.800 (20.3)
.697 (17.7)
.441 (11.2)
.425 (10.8)
.173 (4.4)
.106 (2.7)
.096 (2.3)
.094 (2.4)
.078 (2.0)
.165 (4.2)
.150 (3.8)
.708 (18.0)
.669 (17.0)
.114 (2.9)
.098 (2.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
.043 (1.1)
.035 (0.9)
.402 (10.2)
.386 (9.8)
.303 (7.7)
.287 (7.3)
.303 (7.7)
.287 (7.3)
.031 (0.8)
.023 (0.6)
Dimensions in inches and (millimeters)
-
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 100
o
C
with heatsink
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
Operating and Storage Temperature Range
T
J,
T
STG
-55 to + 150
0
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
RS3501M RS3502M RS3503M RS3504M RS3505M RS3506M RS3507M UNITS
50
35
50
100
70
100
200
140
200
400
280
400
35
400
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per element at 17.5A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@T
A
= 25
o
C
@T
C
= 100 C
o
SYMBOL
V
F
I
R
RS3501M RS3502M RS3503M RS3504M RS3505M RS3506M RS3507M UNITS
1.1
10
0.2
Volts
uAmps
mAmps
2001-9
f.134 (3.1)
.122 (3.1)
RATING AND CHARACTERISTIC CURVES (RS3501M THRU RS3507M)
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
POWER DISSIPATION
60
sine wave
Tj=150
35
25
10
5
2
1
0.5
0.2
0.1
0.2
0.4
0.6
0.8
1
pulse test
per one diode
TC = 150 (TYP)
POWER DISSIPATION P
F
(W)
50
40
T
C
= 25 (TYP)
30
20
10
0
1.2
1.4
1.6
0
4
8
12
16
20
24
INSTANTANEOUS FORWARD VOLTAGE, (V)
SURGE FORWARD CURRENT CAPABILITY
PEAK FORWARD SURGE CURRENT, (A)
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
TYPICAL FORWARD CURRENT
DERATING CURVE
4
AVERAGE FORWARD CURRENT, (A)
on glass-epoxi substrate
400
sine wave
0
I
FSM
8.3ms 8.3ms
3
350
1 cycle
non-repetitive
Tj=25
P.C.B
soldering land 5mmf
sine wave
R-load
free in air
2
300
1
250
1
2
5
10
20
50
100
0
0
40
80
120
)
160
NUMBER OF CYCLE
TYPICAL FORWARD CURRENT
DERATING CURVE
40
AVERAGE FORWARD CURRENT, (A)
AMBIENT TEMPERATURE, (
CONTACT THERMAL RESISTANCE fcf
1
with thermal compound
38
36
34
32
30
28
26
24
22
20
80
90
heatsink
Tc
Tc
0.9
/W)
sine wave
R-load
on heatsink
THERMAL RESISTANCE (
0.8
0.7
0.6
0.5
0.4
100 110 120 130 140
)
150 160
2
3
4
5
6
7
8
CASE TEMPERATURE, (
MOUNTING TORQUE (Kg.cm)
RECTRON
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