Ordering number : ENN5183B
2SA1968LS
PNP Triple Diffused Planar Silicon Transistor
2SA1968LS
High-Voltage Amplifier,
High-Voltage Switching Applications
Features
•
•
•
•
Package Dimensions
unit : mm
2079D
[2SA1968LS]
10.0
3.2
4.5
2.8
High breakdown voltage(VCEO min=-
-900V).
Small Cob(Cob typ=2.2pF).
High reliability(Adoption of HVP process).
Package of full isolation type.
3.5
7.2
16.1
16.0
3.6
0.9
1.2
1.2
0.75
1 2 3
14.0
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.55
2.55
2.4
0.6
Ratings
--900
--900
--7
--10
--30
2
150
--55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=-
-900V, IE=0
VEB=-
-5V, IC=0
Ratings
min
typ
max
--1
--1
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM / 91098 HA (KT) / 92095 YK (KOTO) TA-0439 No.5183-1/3
2SA1968LS
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Transient Thermal Resistance
Symbol
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Rth(j-c)
Conditions
VCE=--5V, IC=--1mA
VCE=--10V, IC=--1mA
VCB=--100V, f=1MHz
IC=--500µA, IB=--100µA
IC=--500µA, IB=--100µA
IC=--100µA, IE=0
IC=--1mA, RBE=∞
IE=--100µA, IC=0
junction-case
--900
--900
--7
8.3
Ratings
min
20
6
2.2
--1
--1.5
typ
max
50
MHz
pF
V
V
V
V
V
˚C / W
Unit
--45
--50
µ
µ
A
A
--1.0
IC -- VCE
--4
0
µ
--35µA
--30µA
Collector Current, IC -- mA
--10
IC -- VCE
A
A
6m
1.4m
-
-1.
-
-
A
m
1.8
A
2mA
--1.
--1.0m
A
0
µ
--80
0
µ
A
--60
µ
A
--400
--200
µ
A
--150
µ
A
A
Collector Current, IC -- mA
--0.8
--8
--0.6
--20µA
--15µA
--6
--0.4
--4
--2
.
0m
A
--25µA
--
--10µA
--0.2
--100µA
--2
--5µA
IB=0
0
--2
--4
--6
--8
--10
IT03904
--50µA
IB=0
0
--2
--4
--6
--8
--10
IT03905
0
0
Collector-to-Emitter Voltage, VCE -- V
--10
--9
IC -- VBE(ON)
Collector-to-Emitter Voltage, VCE -- V
100
hFE -- IC
VCE= --5V
Collector Current, IC -- mA
--8
--7
--6
7
5
VCE= --5V
Ta=120°C
DC Current Gain, hFE
3
2
25°C
Ta=120
°
C
--5
--4
--3
--2
--1
0
0
--0.2
--0.4
--40°C
25
°C
--40
°C
10
7
5
3
2
--0.6
--0.8
--1.0
--1.2
--1.4
7 --0.1
2
3
5
7 --1.0
2
3
5
Base-to-Emitter ON Voltage, VBE(ON) -- V
2
--10
7
5
3
IT03906
3
VCE(sat) -- IC
Collector Current, IC -- mA
7 --10
2
IT03907
VBE(sat) -- IC
IC / IB=5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
IC / IB=5
--1.0
7
5
Ta=
--40
°C
12
0
25
°
C
°
C
2
--1.0
7
5
3
2
--0.1
7 --0.1
2
3
5
7 --1.0
2
--4
0
25
°C
120
°
C
Ta
=
°
C
3
2
--0.1
3
5
7 --10
2
3
7 --0.1
2
3
5
7 --1.0
2
3
5
Collector Current, IC -- mA
IT03908
Collector Current, IC -- mA
7 --10
2
IT03909
No.5183-2/3
2SA1968LS
2
fT -- IC
VCE= --10V
5
3
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, fT -- MHz
7
5
3
2
Output Capacitance, Cob -- pF
--10
2
10
7
5
3
2
1.0
7
5
3
2
--1.0
7
5
3
7
--0.1
2
3
5
7
--1.0
2
3
5
Collector Current, IC -- mA
5
3
--10
IT03910
2.4
7
7 --1.0
2
3
5 7 --10
2
3
5 7--100
2
3
Forward Bias A S O
Collector-to-Base Voltage, VCB --
5 7
--1000 2
V
IT03911
PC -- Ta
ICP= --30mA
≤100µs
Collector Current, IC -- mA
2
10
--10
7
5
3
2
m
IC= --10mA
DC operation
s
50
0
1m
µ
s
s
Collector Dissipation, PC -- W
2.0
1.6
1.2
No
he
a
ts
in
k
0.8
0.4
--1.0
5
Ta=25°C
Single pulse
7
--100
2
3
5
7
--1000
2
IT03912
0
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta --
°C
IT03913
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of Novermber, 2001. Specifications and information herein are subject
to change without notice.
PS No.5183-3/3
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