ISP817X, ISP827X, ISP847X
ISP817, ISP827, ISP847
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l
VDE 0884 in 3 available lead form : -
- STD
- G form
-
SMD approved to CECC 00802
l
Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
ISP817X
ISP817
2.54
7.0
6.0
1.2
5.08
4.08
1
2
Dimensions in mm
4
3
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
DESCRIPTION
2.54
The ISP817, ISP827, ISP847 series of optically
1
coupled isolators consist of infrared light
2
emitting diodes and NPN silicon photo
7.0
3
transistors in space efficient dual in line plastic
6.0
packages.
4
1.2
FEATURES
10.16
l
Options :-
7.62
9.16
10mm lead spread - add G after part no.
4.0
3.0
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
0.5
l
High Current Transfer Ratio (50% min)
3.0
0.26
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
3.35
l
High BV
CEO
( 35Vmin )
0.5
1
l
All electrical parameters 100% tested
l
Custom electrical selections available
2
ISP847X
APPLICATIONS
ISP847
3
l
Computer terminals
4
2.54
l
Industrial systems controllers
l
Measuring instruments
5
l
Signal transmission between systems of
6
7.0
different potentials and impedances
6.0
OPTION SM
SURFACE MOUNT
OPTION G
ISP827X
ISP827
0.5
3.35
8
7
6
5
13°
Max
16
15
14
13
12
11
10
9
7.62
1.2
20.32
19.32
4.0
3.0
0.5
3.0
0.5 3.35
7
8
7.62
13°
Max
0.26
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
18/10/99
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92275M-AAS/A1
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
(derate linearly 2.67mW/°C above 25°C)
35V
6V
150mW
200mW
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
MIN TYP MAX UNITS
1.2
6
10
1.4
V
V
µ
A
V
V
nA
TEST CONDITION
I
F
= 20mA
I
R
= 10
µ
A
V
R
= 6V
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 20V
5mA I
F
, 5V V
CE
5mA I
F
, 5V V
CE
5mA I
F
, 5V V
CE
20mA I
F
, 1mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 2mA, R
L
= 100
Ω
Output
Collector-emitter Breakdown (BV
CEO
)
35
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
ISP817, ISP827, ISP847
ISP817GB, ISP827GB, ISP847GB
ISP817BL, ISP827BL, ISP847BL
Collector-emitter Saturation VoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time tr
Output Fall Time tf
50
100
200
100
Coupled
600
600
600
0.2
%
%
%
V
V
RMS
V
PK
4
3
18
18
Ω
µ
s
µ
s
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
18/10/99
DB92275M-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
CE(SAT)
=1mA
3mA
5mA
10mA
Collector power dissipation P
C
(mW)
6
5
4
3
2
1
0
15mA
200
(V)
Collector-emitter Saturation
Voltage vs. Forward Current
Collector-emitter saturation voltage V
150
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
0
Ic
T
A
= 25°C
5
10
15
Forward current I
F
(mA)
Collector Current vs. Collector-emitter Voltage
50
50mA
30mA
Collector current I
C
(mA)
40
30
20
10
0
20mA
15mA
10mA
T
A
= 25°C
50
Forward current I
F
(mA)
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
I
F
= 20mA
I
C
= 1mA
Current transfer ratio CTR (%)
0.12
0.10
0.08
0.06
0.04
0.02
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
18/10/99
I
F
= 5mA
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
1
2
5
10
20
50
Forward current I
F
(mA)
DB92275M-AAS/A1
Collector-emitter saturation voltage V
CE(SAT)
(V)
V
CE
= 5V
T
A
= 25°C
嵌入式系统
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