PD - 94631A
SMPS MOSFET
IRFB16N60L
HEXFET
®
Power MOSFET
Applications
•
Zero Voltage Switching SMPS
V
DSS
R
DS(on)
typ.
Trr
typ.
I
D
•
Telecom and Server Power Supplies
•
Uninterruptible Power Supplies
385mΩ
600V
130ns 16A
•
Motor Control applications
Features and Benefits
•
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
•
Lower Gate charge results in simpler drive requirements.
•
Enhanced dv/dt capabilities offer improved ruggedness.
TO-220AB
•
Higher Gate voltage threshold offers improved noise immunity
.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
Max.
16
10
60
310
2.5
±30
11
-55 to + 150
300 (1.6mm from case )
1.1(10)
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
c
P
D
@T
C
= 25°C Power Dissipation
V
GS
dv/dt
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
e
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
130
240
450
5.8
16
A
60
1.5
200
360
670
8.7
V
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
f
ns T
J
= 25°C, I
F
= 16A
T
J
= 125°C, di/dt = 100A/µs
nC
A
J
J
––– 1080 1620
f
T = 25°C, I = 16A, V = 0V
f
T = 125°C, di/dt = 100A/µs
f
S
GS
T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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10/19/04
IRFB16N60L
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
600
–––
–––
3.0
–––
–––
–––
–––
–––
–––
0.39
385
–––
–––
–––
–––
–––
0.79
–––
–––
460
5.0
50
2.0
100
-100
–––
Ω
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 9.0A
V V
DS
= V
GS
, I
D
= 250µA
µA
mA
nA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
f = 1MHz, open drain
f
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff.
C
oss
eff. (ER)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Min. Typ. Max. Units
8.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
44
28
5.5
2720
260
20
120
100
–––
100
30
46
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
S
I
D
= 16A
Conditions
V
DS
= 50V, I
D
= 9.0A
V
DS
= 480V
V
GS
= 10V, See Fig. 7 & 15
V
DD
= 300V
I
D
= 16A
R
G
= 1.8Ω
V
GS
= 10V, See Fig. 11a & 11b
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V,V
DS
= 0V to 480V
f
f
g
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy.
Avalanche Current
Ã
d
Typ.
–––
–––
–––
Max.
310
16
31
Units
mJ
A
mJ
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
h
Typ.
–––
–––
Max.
0.4
62
Units
°C/W
Junction-to-Ambient
h
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 12)
Starting T
J
= 25°C, L = 2.5mH, R
G
= 25Ω,
I
AS
= 16A.(See Figure 14a)
I
SD
≤
16A, di/dt
≤
650A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
Pulse width
≤
300µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff.(ER) is a fixed capacitance that stores the same energy
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C
2
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IRFB16N60L
1000
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
100
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
BOTTOM
10
BOTTOM
5.0V
1
1
0.1
5.0V
0.1
0.01
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
0.01
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
RDS(on) , Drain-to-Source On Resistance
ID = 15A
2.5
ID, Drain-to-Source Current
(Α
)
100
VGS = 10V
(Normalized)
10
T J = 150°C
2.0
1.5
1
T J = 25°C
0.1
1.0
VDS = 50V
20µs PULSE WIDTH
0.01
4
6
8
10
12
14
16
0.5
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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IRFB16N60L
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
25
10000
20
C, Capacitance(pF)
Ciss
Energy (µJ)
1000
15
Coss
100
10
Crss
10
5
1
1
10
100
1000
0
0
100
200
300
400
500
600
700
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typ. Output Capacitance
Stored Energy vs. V
DS
12.0
ID= 15A
VGS , Gate-to-Source Voltage (V)
100.00
VDS= 480V
VDS= 300V
VDS= 120V
ISD, Reverse Drain Current (A)
10.0
8.0
10.00
T J = 150°C
6.0
4.0
1.00
T J = 25°C
2.0
VGS = 0V
0.0
0
10
20
30
40
50
60
70
Q G Total Gate Charge (nC)
0.10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8.
Typical Source-Drain Diode
Forward Voltage
4
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IRFB16N60L
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
18
16
14
ID, Drain Current (A)
10000
ID, Drain-to-Source Current (A)
100
12
10
8
6
4
2
10
100µsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1msec
10msec
0
1000
25
50
75
100
125
150
VDS, Drain-to-Source Voltage (V)
T C , Case Temperature (°C)
Fig 9.
Maximum Safe Operating Area
Fig 10.
Maximum Drain Current vs.
Case Temperature
V
DS
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
V
DS
90%
D.U.T.
+
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 11a.
Switching Time Test Circuit
Fig 11b.
Switching Time Waveforms
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